A control device for a power semiconductor switch, has a first, second and third electrical control device terminal, and a control device that according to a control signal generates an actuation voltage on the third control device terminal and actuates the power semiconductor switch. An overcurrent detection circuit determines a first voltage corresponding to a primary power semiconductor switch voltage present between the first and second control device terminals and, if the first voltage, further to commence the generation of an actuation voltage for a switch-on of the power semiconductor switch, and if the voltage exceeds a reference voltage, to generate an overcurrent detection signal. A blocking circuit blocks the output of the overcurrent detection signal from the overcurrent detection circuit, if a control current flowing in the third control device terminal for the actuation of the power semiconductor switch exceeds a first current value and/or is designed to block the output of the overcurrent detection signal from the overcurrent detection circuit, if the actuation voltage is smaller than a first voltage value.

A semiconductor device having a semiconductor chip and a control circuit. The semiconductor chip has a gate electrode pad connected to the gate of an output element and the gate of a current monitor element, a sense emitter electrode pad connected to the sense emitter of the current monitor element and to the anode of the temperature detection diode via a current limiting element, and a cathode electrode pad that is connected to the cathode of the temperature detection diode, the cathode being grounded without being connected to the emitter of the output element. In a temperature detection mode, the control circuit receives a temperature detection voltage via the sense emitter electrode pad and detects the temperature state of the output element. In a current detection mode, the control circuit receives a sense current via the sense emitter electrode pad and detects the current state of the output element.

A system and method for an overcurrent detector includes a device. The device includes a threshold generation circuit, and an overpower determination circuit. The threshold generation circuit is configured to produce a threshold value based on an output of a temperature sensor proximate to a power transistor, and a maximum power dissipation in the power transistor. The overpower determination circuit is configured to determine an overpower state of the power transistor based on the threshold value and a switch voltage. The switch voltage is detected between a source and a drain or a collector and an emitter of the power transistor.

Described embodiments include a safety disconnect circuit having a logic circuit with first, second and third logic inputs and a logic output. A latch has a latch input coupled to the logic output, a latch power input, and a latch output. A counter has a counter input coupled to the logic output, and a counter output. A switch is coupled between a fault terminal and a ground terminal, and has a switch control terminal coupled to the latch output. A first voltage supply has a first supply input and a first supply output. A second voltage supply has a second supply input and a second supply output. A multiplexer has first and second multiplexer inputs that are coupled to first and second supply outputs, respectively. The multiplexer output is coupled to the latch power input. The multiplexer control terminal is coupled to the counter output.

A sensor excitation circuit includes a voltage driver circuit and a short-circuit protection circuit. The voltage driver circuit selectively conducts electrical current via a driver output in response to a first operating voltage exceeding a driver voltage threshold (V1be). The short-circuit protection circuit includes a protection semiconductor switching device and a temperature compensation circuit. The protection semiconductor switching device limits the electrical current through the voltage driver circuit in response to switching on when a second operating voltage exceeds a protection voltage threshold (V2be). The temperature compensation circuit is connected to the protection semiconductor switching device, and is configured to limit a variation of the protection threshold voltage (V2be) in response to exposing the protection semiconductor switching device to different temperatures.

An ESD protection circuit is provided. A first PNP BJT is coupled to a first power pad and a second power pad. A first resistor is coupled between the first power pad and the base of the first PNP BJT. The emitter of a second PNP BJT is coupled to the second power pad. The collector of the second PNP BJT is coupled to a third power pad. The cathode of a diode is coupled to the first power pad and the base of the second PNP BJT. The anode of the diode is coupled to the third power pad. A specific BJT is coupled between the first and second power pads. A second resistor is coupled between the emitter and the base of the specific BJT. In response to an ESD event occurring, the first PNP BJT and the specific BJT are turned.