The invention relates to a method for setting a dead time between the opening of a first switching element (31) of a half bridge (2) and the closing of a second switching element (32) of the half bridge (2), comprising the steps: reducing the dead time of a switching cycle relative to the dead time of a preceding switching cycle, and determining a temperature of at least one of the switching elements (31, 32); wherein the steps of reducing the dead time and of determining the temperature are repeated for subsequent switching cycles until a critical dead time is reached, in the case of which a termination condition, which depends on the determined temperature, is fulfilled; and wherein the dead time is set using the critical dead time.

A drive circuit includes: a signal generation circuit; a comparator; a comparator; and a short circuit determination unit. The signal generation circuit is configured to generate, as an output signal, a differential amplification signal of a voltage detection signal indicating a gate voltage of a semiconductor element and a delay signal of the voltage detection signal. The comparator is configured to compare a value of the differential amplification signal with a first reference voltage value. The comparator is configured to compare a voltage value indicating a gate current with a second reference voltage value. The short circuit determination unit is configured to determine whether or not the semiconductor element is in a short-circuited state, based on a result of comparison by each of the comparators, and generate a determination signal indicating a determination result.

This disclosure relates to monitoring the condition of electrical/electronic switches over time by monitoring the impedance of the switch. The condition of switches can degrade as they age, which can reduce their performance and may ultimately lead to failure. In many applications, particularly high-voltage applications, the reliable operation of switches may be very important and failures can present a safety risk and cause costly unscheduled system downtime for repairs. It has been realised that as the condition of switches change, their impedance changes, so monitoring the impedance can give a good indication of the condition of the switch, enabling potential faults/failures to be identified early and acted upon pre-emptively.

An apparatus controls a high-power drive device external to a package of a gate driver circuit. A first circuit charges the control node over a first length of time in response to a first signal through the first node indicating an absence of a fault condition and a first level of a control signal. A second circuit discharges the control node over a second length of time in response to a second signal through the second node indicating the absence of the fault condition and a second level of a control signal. A third circuit includes a current amplifier and is configured as a soft shutdown path to discharge the control node over a third length of time in response to the first signal through the first node indicating a presence of the fault condition. The third length of time is different from the second length of time.

A gate driver with an integrated Miller clamp controls a high-power drive device coupled to a terminal of a package that houses an integrated circuit coupled to the terminal. A method includes generating an indication of a level of a signal on the terminal with respect to a predetermined signal level. The method includes configuring a variable strength driver of the integrated circuit to charge, discharge, or clamp the terminal based on a control signal and the indication.

There is provided a current detection circuit including: a current detection unit that detects a control current flowing between a control terminal of a semiconductor element of voltage-controlled type having a current detection terminal, and a drive circuit; an overcurrent detection unit that detects an overcurrent based on a result of comparing a sense voltage with a sense reference voltage, the sense voltage corresponding to a sense current flowing through the current detection terminal; and an adjustment unit that adjusts the sense reference voltage based on a detection result of the current detection unit.

There is provide a current detection circuit including: a current detection unit that detects a control current flowing between a control terminal of a semiconductor element of voltage-controlled type having a current detection terminal, and a drive circuit; an overcurrent detection unit that detects an overcurrent in response to a sense current exceeding an overcurrent threshold value, the sense current flowing through the current detection terminal; and an adjustment unit that sets, based on a detection result of the current detection unit, the overcurrent threshold value in a transient period during turn on and turn off of the semiconductor element to be higher than the overcurrent threshold value in a period other than the transient period.

The present disclosure provides a gate circuit and a gate drive circuit for a power semiconductor switch, including: a zener diode and a charge dissipation circuit. A first end of the zener diode is connected to a first end of the charge dissipation circuit and a gate of the power semiconductor switch, a second end of the zener diode is connected to a second end of the charge dissipation circuit and a second end of the power semiconductor switch. A first parasitic capacitor is formed between a first end and the gate of the power semiconductor switch, and a second parasitic capacitor is formed between the gate and the second end of the power semiconductor switch.

A plurality of drive circuits each drive a corresponding one of a plurality of power semiconductor elements connected in parallel. Each of the drive circuits includes a control command unit, a current detector, a differentiator, and an integrator. The current detector detects a gate current that flows into a gate terminal of a corresponding one of the power semiconductor elements after the control command unit outputs a turn-on command. The differentiator performs time differentiation of the gate current detected by the current detector. The integrator performs time integration of the gate current detected by the current detector. Based on a differential value and an integral value in each of the drive circuits, the determination unit determines whether an overcurrent state occurs or not in any of the plurality of power semiconductor elements.

The invention relates to a method for actuating at least one semiconductor switch, in particular in a component of a motor vehicle. The at least one semiconductor switch can be switched with a control voltage (1) according to the following method steps: a1) specifying the control voltage (1) in a tolerance range (2) and a2) monitoring whether a control voltage (1) actually being applied to the at least one semiconductor switch exceeds at least one threshold (4, 5), wherein at least the following method step is carried out at at least one control time: b1) ascertaining a difference between the control voltage (1) actually being applied to the at least one semiconductor switch and the at least one threshold, the control voltage (1) specified according to step a1) being manipulated according to the at least one control time using the result from step b1).