Circuits for providing overcurrent and overvoltage protection are disclosed herein. The circuits feature a depletion mode MOSFET (D MOSFET) as a current limiter, the D MOSFET being connected to a bi-metallic switch, where the bi-metallic switch acts as a temperature sensing circuit breaker. In combination, the D MOSFET and bi-metallic switch are able to limit current to downstream circuit components, thus protecting the components from damage.

The invention relates to a method and an actuation assembly (3) for actuating a MOSFET (1), in particular a MOSFET (1) based on a semiconductor with a wide band gap. According to the invention, a characteristic block is generated in which a change (ΔU1, ΔU2, ΔR1, ΔR2) in at least one actuation variable (U1, U2, R1, R2) for actuating the MOSFET (1) with respect to a reference actuation value of the actuation variable (U1, U2, R1, R2) is stored on the basis of at least one operating characteristic variable (U, T) which influences the switching behavior of the MOSFET (1), said change counteracting a change in the switching behavior as a result of the at least one operating characteristic variable (U, T). During the operation of the MOSFET (1), an actual value of the at least one operating characteristic variable (U, T) is ascertained, and the reference actuation value of the at least one actuation variable (U1, U2, R1, R2) is changed according to the characteristic block depending on the actual value of the at least one operating characteristic variable (U, T).

An integrated circuit is described herein. In accordance with one embodiment the circuit includes a transistor coupled between a supply pin and an output pin, a current output circuit configured to provide a diagnosis current at an current output pin, a current sensing circuit coupled to the transistor and configured to generate a first current sense signal indicative of a load current passing through the transistor and a second current sense signal indicative of the load current. The current output circuit is configured to select, dependent on a control signal, one of the following as diagnosis current: the first current sense signal and the second current sense signal.

In accordance with an embodiment, a circuit for driving an electronic switch includes a control circuit configured to trigger a switch-on and a switch-off of the electronic switch in accordance with an input signal, wherein the control circuit is further configured to trigger the switch-off of the electronic switch in response to an under-voltage signal signaling an under-voltage state; and an under-voltage detection circuit configured to signal the under-voltage state when a supply voltage received at a supply node is below an under-voltage threshold value, wherein the under-voltage threshold value depends on a load current passing through the electronic switch.

The driver circuit includes DC cut capacitors, an input buffer, input termination resistors connected in series between differential input signal terminals and an ESD protection circuit connected to a connection point of the input terminal resistors. The ESD protection circuit includes diodes.

A switching module a method for connecting a load to a DC network are disclosed. The switching module includes a first module connection, a second module connection, a third module connection, a first electronic switch connected between the first module connection and the second module connection, and a second electronic switch connected between the second module connection and the third module connection. The two electronic switches are connected in anti-series between the first module connection and the third module connection.

A snubber circuit configured to be coupled to a switching circuit, comprises a snubber capacitor; a diode; and a coil, wherein the switching circuit includes an upper switch element coupled between a high potential node and a switch node, a lower switch element coupled between the switch node and a reference potential node, and a bypass capacitor coupled between the high potential node and the reference potential node, a positive electrode of the snubber capacitor is configured to be coupled to the high potential node, an anode of the diode is coupled to a negative electrode of the snubber capacitor, and a cathode of the diode is coupled to the switch node, and one end of the coil is coupled to the negative electrode of the snubber capacitor, and another end of the coil is coupled to the reference potential node.

Systems, methods, techniques and apparatuses of power switches are disclosed. One exemplary embodiment is a power switch comprising a first semiconductor device and a second semiconductor device coupled together in a first anti-series configuration between a first terminal and a second terminal; a third semiconductor device and a fourth semiconductor device coupled together in a second anti-series configuration between the first terminal and the second terminal; a controller configured to operate the power switch to simultaneously conduct a first portion of a load current from the first terminal to the second terminal by closing the first semiconductor device and the second semiconductor device, and to conduct a second portion of the load current from the first terminal to the second terminal by closing the third semiconductor device and the fourth semiconductor device.

The invention relates to a method and an actuating arrangement for controlling a MOSFET, in particular wide-bandgap MOSFET. A change of an actuating variable, which actuates the MOSFET as a function of an operating characteristic variable that influences the switching behavior of the MOSFET is stored in a characteristic block. The change counteracts a reference actuating value of the actuating variable. An actual value of the operating characteristic variable is determined during operation of the MOSFET, The actuating variable is changed from the reference actuating value as a function of the actual value commensurate with the change of the actuating variable stored in the characteristic block. The change stored in the characteristic block can include a change in the switch-on or switch-off voltage or gate resistance of the MOSFET as a function of the operating temperature or the operating voltage of the MOSFET.

Methods, apparatus, systems, and articles of manufacture providing adaptive voltage clamps are disclosed. An example apparatus includes a voltage clamp to clamp a drain-to-source voltage of a transistor to a first voltage when the drain-to-source voltage exceeds the first voltage, and a controller to generate a control signal to direct the voltage clamp to clamp the drain-to-source voltage to a second voltage different from the first voltage based on a fault signal.