A circuit and method for digital controlling the slew rate of load voltage are provided. The circuit is comprised of a digital slew-rate control unit that utilizes a feedback signal to generate control signals where the feedback signal indicates the observed rate of voltage change on the load. The circuit is further comprised of a load driver circuit that is operated by the control signals and provides a slew-rate controlled output voltage used to operate a load switch, where the load switch provides power to the load. The circuit is configured to operate the load switch using a slew-rate controlling driver, depending on the state of the load switch transition, and a non-controlling driver.

Circuitry for soft shutdown of a power switch and a power converters that includes circuitry for soft shutdown are described. In one aspect, circuitry for soft shutdown of a power switch includes a sense input to be coupled to a power switch receive a signal representative of current passing through the power switch, a comparator to compare the signal with an overcurrent threshold indicative of an overcurrent condition of the power switch and to output a triggering signal in response to the comparison indicating the overcurrent condition, and a gating transistor to be coupled to a control terminal of the power switch, the gating transistor configured to divert a portion of a drive signal away from the control terminal of the power switch in response to the triggering signal.

A control circuit for turning on a power semiconductor switch comprises an input which is configured to receive a signal that characterizes the switch-on behavior of the power semiconductor switch, a variable current source which is configured to supply a current with a variable level to a control input of the power semiconductor switch in order to switch on the power semiconductor switch, wherein the control circuit is configured to control the variable current source in a closed control loop in response to the signal that characterizes the switch-on behavior of the power semiconductor switch.

A gate driver integrated circuit for driving a gate of an IGBT or MOSFET receives an input signal. In response to a rising edge of the input signal, the integrated circuit causes the gate to be driven in a first sequence of time periods. In each period, the gate is driven high (pulled up) via a corresponding one of a plurality of different effective gate resistances. In response to a falling edge of the input signal, the integrated circuit causes the gate to be driven in a second sequence of time periods. In each period, the gate is driven low (pulled down) via a corresponding one of the different effective gate resistances. In one example, the duration of each time period is set by a corresponding external passive circuit component. The different effective gate resistances are set by external gate resistors disposed between the integrated circuit and the gate.

The present application discloses a driving device for a power device, which includes a control circuitry configured to receive at least a system switching command and a feedback signal of a power device, and to generate a pull-up strength control signal or a pull-down strength control signal according to the received signals; and a pull-up array and/or a pull-down array, coupled between the control circuitry and the power device, and configured to provide a corresponding pull-up or pull-down strength for the power device according to the pull-up or pull-down strength control signal. The present application also discloses the corresponding electric appliance and power device driving method.

An electronic circuit includes a gate driver circuit. The gate driver circuit receives an input signal and a signal corresponding to a current through a switch, and produces, using the input signal, an output signal for controlling the switch. In response to the input signal being de-asserted, the gate driver circuit may turn the switch off at a normal turn-off rate when the current through the switch is less than an overcurrent (OC) threshold, and at an OC turn-off rate that is slower than the normal turn-off rate when the current through the switch is greater than the OC threshold.

A switching power-supply device has an inductor, a switching element serially connected to the inductor, a control circuit, which controls on and off of the switching element and performs an output voltage control in any one of a plurality of modes including a continuous mode and a discontinuous mode, and a continuous mode detection circuit, which detects that the output voltage control is performed in the continuous mode when a current flowing through the switching element is equal to or greater than a threshold.

A gate driver for a semiconductor power device and a method of driving the gate of a semiconductor power device. The current flowing through the semiconductor power device, caused by a first gate drive voltage during the present switching cycle, is sensed. Based on a second drive signal to be used in the next switching cycle, a second current is determined for that second drive signal, which are then compared to an EMC model. The EMC model defines a plurality of EMC values for respective gate drive voltages and currents conducted through the semiconductor power device. A gate drive voltage adjustment value is selected from a plurality of gate drive voltage adjustment values in the EMC model based on the predicted EMC value generated by the semiconductor power device when being driven using the second drive voltage and conducting the second current. The second gate drive voltage is adjusted using the selected gate drive voltage adjustment value for the next switching cycle.

The present application provides a load switch circuit including a power transistor, the first terminal is configured to receive the power supply voltage, and the second terminal is the output terminal of the load switch circuit and is coupled with an external inductive load; a clamping module including at least a mutually coupled clamping unit and a driving unit; the clamping unit, including a voltage-current converter and a first resistor, the first resistor is coupled between the output terminal of the voltage-current converter and the second terminal of the power transistor, the positive input terminal of the voltage-current converter receives the power supply voltage, and the negative input terminal is coupled to the second terminal of the power transistor; the current output by the voltage-current converter generates a reference voltage drop on the first resistor; the output terminal of the drive unit is coupled to the control terminal of the power transistor when the difference between the power supply voltage and the output voltage of the power transistor is greater than or equal to the preset clamping threshold, the clamping unit outputs an effective drive control signal to the driving unit; the preset clamping threshold is sum of the reference voltage drop and the threshold of the first transistor.

This document discusses, among other things, apparatus and methods for an edge rate driver for a power converter switch. In an example, the driver can include an input node configured to receive a pulse width modulated signal, a first switch configured to couple a control node of the power converter switch to a supply voltage during a first state, a second switch configured to couple the control node of the power converter switch to a reference voltage during a second state, and a first current source configured to supply charge current to the first switch when the power converter switch transitions from the second state to the first state, the charge current configured to charge a parasitic capacitance of the power converter switch.