According to one embodiment, a control circuit is connected to an element portion including a first element. The first element includes a first gate, a first collector, and a first emitter. The control circuit performs a first operation and a second operation. In at least a portion of the first operation, the control circuit causes a first current to flow from the first collector toward the first emitter. In at least a portion of the second operation, the control circuit causes a second current to flow from the first emitter toward the first collector. A first time constant of a switching of the first element in the first operation is different from a second time constant of a switching of the first element in the second operation.

A driving circuit for an N-channel or NPN-type high-side transistor includes: a level shift circuit configured to level-shift an input signal; and a buffer configured to drive the N-channel or NPN-type high-side transistor according to an output of the level shift circuit, wherein the level shift circuit includes: a differential conversion circuit of an open drain type configured to convert the input signal into a differential signal; a latch circuit configured to perform a state transition with a differential output of the differential conversion circuit as a trigger; and an assist circuit configured to inject an assist current into the latch circuit in synchronization with the input signal.

A driving circuit for an N-channel or NPN-type high-side transistor includes: a level shift circuit configured to level-shift an input signal; and a buffer configured to drive the N-channel or NPN-type high-side transistor according to an output of the level shift circuit, wherein the level shift circuit includes: a differential conversion circuit of an open drain type configured to convert the input signal into a differential signal; a latch circuit configured to perform a state transition with a differential output of the differential conversion circuit as a trigger; and an assist circuit configured to inject an assist current into the latch circuit in synchronization with the input signal.

A method for controlling an electronic semiconductor switch connected in a load current circuit, the semiconductor switch being connected between an input terminal routed to a source and an output terminal of the load current circuit routed to a load. A control circuit is connected to a supply voltage and has a bridge circuit connected on the primary side to a transformer and to the supply voltage. A load circuit is connected to the transformer on the secondary side, the load circuit having a driver circuit for the semiconductor switch. A threshold value signal is routed to the bridge circuit on the control side. The bridge circuit generates a primary signal which is transmitted as a secondary signal to the load circuit that is galvanically isolated from the control circuit, and wherein the secondary signal is fed to the driver circuit, which generates a drive signal for the semiconductor switch.

A capacitive load driving circuit includes a first switching element, a second switching element, a third switching element, a fourth switching element and voltage dropper elements. The first switching element is provided on a first charging path extending from a power supply to a capacitive load. The second switching element is provided on a second charging path extending from a capacitor to the capacitive load. The third switching element is provided on a first discharging path extending from the capacitive load to a ground. The fourth switching element is provided on a second discharging path extending from the capacitive load to the capacitor. The voltage dropper elements are provided on each of control signal power supply paths to the first switching element, to the second switching element, to the third switching element and to the fourth switching element. The voltage dropper elements are configured to make electric current flow more easily through the second charging path than through the first charging path when charging the capacitive load and to make electric current flow more easily through the second discharging path than through the first discharging path when discharging the capacitive load by a potential difference.

A system for driving an inductive load of an appliance is provided. The system includes a direct current (DC) bus of the appliance. The DC bus is coupled to the inductive load of the appliance. The system includes a transistor having a first terminal, a second terminal, and a third terminal. The first terminal is coupled to the inductive load of the appliance. The second terminal is coupled to ground. The system includes a controller coupled to the third terminal of the transistor. The controller is configured to control operation of the transistor to drive the inductive load of the appliance.

Dual-base two-sided bipolar power transistors which use an insulated field plate to separate the emitter/collector diffusions from the nearest base contact diffusion. This provides a surprising improvement in turn-off performance, and in breakdown voltage.

Dual-base two-sided bipolar power transistors which use an insulated field plate to separate the emitter/collector diffusions from the nearest base contact diffusion. This provides a surprising improvement in turn-off performance, and in breakdown voltage.

A power switch circuit includes a first switch circuit, a second switch unit and a capacitor. The capacitor has a first terminal coupled to a node between the first and second switch units. In addition, the capacitor has a second terminal coupled to the first and second switch units, a charge pump and a charging circuit. When the power switch circuit is coupled to a load, the charging circuit pre-charges the capacitor. Once the load is enabled, the first and second switch units are turned on by only a small voltage increase at the second terminal of the capacitor by the charge pump to allow power to be supplied to a load through the first and second switch units from a power supply.

Dual-base two-sided bipolar power transistors which use an insulated field plate to separate the emitter/collector diffusions from the nearest base contact diffusion. This provides a surprising improvement in turn-off performance, and in breakdown voltage.