A semiconductor module includes a photocoupler, a gate driving IC, and a switching element, and at least one of a first structure and a second structure, wherein the first structure is a structure where in a part of a surface of a first lead frame joined to a bottom surface electrode of a light-emitting element, a first conductive layer is disposed with an insulating layer interposed, and a top surface electrode of the light-emitting element, and the first conductive layer are electrically connected by a wire, and the second structure is a structure where in a part of a surface of a second lead frame joined to a bottom surface electrode of a light-receiving element, a second conductive layer is disposed with an insulating layer interposed, and a top surface electrode of the light-receiving element, and the second conductive layer are electrically connected by a wire.

A semiconductor module includes a photocoupler, a gate driving IC, and a switching element, and at least one of a first structure and a second structure, wherein the first structure is a structure where in a part of a surface of a first lead frame joined to a bottom surface electrode of a light-emitting element, a first conductive layer is disposed with an insulating layer interposed, and a top surface electrode of the light-emitting element, and the first conductive layer are electrically connected by a wire, and the second structure is a structure where in a part of a surface of a second lead frame joined to a bottom surface electrode of a light-receiving element, a second conductive layer is disposed with an insulating layer interposed, and a top surface electrode of the light-receiving element, and the second conductive layer are electrically connected by a wire.

A power conversion device includes a high-side transistor including an IGBT, a low-side transistor including an IGBT, and having a collector coupled to an emitter of the high-side transistor, a high-side driver configured to drive the high-side transistor; and a low-side driver configured to drive the low-side transistor, wherein each of the high-side transistor and the low-side transistor includes a first trench gate electrode arranged in an active cell region, and electrically connected to a gate, and a second trench gate electrode and a third trench gate electrode, each of which is arranged at intervals on both sides of the first trench gate electrode, and electrically connected to the emitter in the active cell region. The high-side driver includes a first pull-up transistor configured to apply a first voltage as a positive voltage to the gate, based on the emitter of the high-side transistor and a first pull-down transistor.

A power semiconductor module having switching elements includes: a collector main terminal and a collector auxiliary terminal connected to a collector potential of the switching element; a gate auxiliary terminal connected to a gate potential of the switching element; and an emitter main terminal and an emitter auxiliary terminal connected to an emitter potential of the switching element. A power converter includes a voltage dividing circuit board that generates a divided voltage obtained by dividing a voltage between the collector auxiliary terminal and the emitter auxiliary terminal and transmits to a gate driving circuit. The voltage dividing circuit board is electrically connected to the collector auxiliary terminal and the emitter auxiliary terminal. A gate driving circuit changes a driving speed of the switching element according to the divided voltage.

In one embodiment, an impedance matching network includes a variable reactance circuit having fixed reactance components and corresponding switching circuits. Each switching circuit includes a diode and a driver circuit. The driver circuit includes, coupled in series, a biasing current source positioned to provide a bias current to bias the diode, a first switch, a second switch, and a resistor. For each diode of each switching circuit, the control circuit is configured to receive a value related to a voltage drop on the resistor and, based on the value related to the voltage drop, adjust the bias current being provided by the biasing current source.

To reduce the number of mounted components in the power conversion device and drive device. Each high-side transistor and low-side transistor has an EGE-type structure of (emitter-gate-emitter type). A high-side driver includes a first pull-up transistor configured to apply a first positive voltage to a gate based on an emitter of the high-side transistor, and a first pull-down transistor configured to couple the gate to the emitter. A low-side driver includes a second pull-up transistor configured to apply a second positive voltage to the gate based on an emitter of the low-side transistor, and a second pull-down transistor configured to couple the gate to the emitter.

A photovoltaic (PV) module safety shutdown system includes a module-on switch coupled with a PV module coupled with an alternating current (AC) mains panel through an inverter. A system monitor couples with the module-on switch and with the AC mains panel and generates a system-on signal. A module discharge switch couples with an inherent capacitance of the inverter and with the system monitor. The module discharge switch discharges the inherent capacitance, by coupling the inherent capacitance with a discharge element, in response to the system monitor not generating the system-on signal. In implementations a module short switch shorts the PV module in response to a passage of a predetermined amount of time after the module discharge switch is switched on. The module-on switch, module discharge switch, and module short switch may be included in a junction box of the PV module and coupled with the system monitor through multiple opto-isolators.

A phase loss detection device, a compressor including the same, and a phase loss detection method are disclosed. The phase loss detection device may include a signal converting circuit and a processor. The signal converting circuit is configured to convert voltage signals corresponding to respective phases of multiphase alternating current (AC) power monitored from a motor. The processor is configured to receive the converted voltage signals from the signal converting circuit, and configured to calculate, based on the converted voltage signals, one or more phase angles between the respective voltage signals. The processor is configured to determine that phase loss occurs if any one or more of the calculated phase angles deviate from a nominal value of a corresponding phase angle of the multiphase AC power by a value higher than a predetermined threshold. The phase loss detection can be performed in a convenient, effective and reliable way.

In one embodiment, an impedance matching network is disclosed that includes a first circuit comprising a first variable component providing a first variable capacitance or inductance, and a second circuit comprising a second variable component providing a second variable capacitance or inductance. Each of the first circuit and the second circuit includes plurality of switching circuits configured to provide the first variable capacitance or inductance and the second variable capacitance or inductance. Each of the plurality of switching circuits includes a diode and a driver circuit configured to switch the diode. The driver circuit includes a first switch, a second switch coupled in series with the first switch, and a filter circuit that is coupled at a first end between the first switch and the second switch, and is operably coupled at a second end to the diode.

A photovoltaic (PV) module safety shutdown system includes a module-on switch coupled with a PV module coupled with an alternating current (AC) mains panel through an inverter. A system monitor couples with the module-on switch and with the AC mains panel and generates a system-on signal. A module discharge switch couples with an inherent capacitance of the inverter and with the system monitor. The module discharge switch discharges the inherent capacitance, by coupling the inherent capacitance with a discharge element, in response to the system monitor not generating the system-on signal. In implementations a module short switch shorts the PV module in response to a passage of a predetermined amount of time after the module discharge switch is switched on. The module-on switch, module discharge switch, and module short switch may be included in a junction box of the PV module and coupled with the system monitor through multiple opto-isolators.