To reduce the number of mounted components in the power conversion device and drive device.

Each high-side transistor and low-side transistor has an EGE-type structure of (emitter-gate-emitter type). A high-side driver includes a first pull-up transistor configured to apply a first positive voltage to a gate based on an emitter of the high-side transistor, and a first pull-down transistor configured to couple the gate to the emitter. A low-side driver includes a second pull-up transistor configured to apply a second positive voltage to the gate based on an emitter of the low-side transistor, and a second pull-down transistor configured to couple the gate to the emitter.

A keyboard key structure comprising a key stem, a contact-based mechanical trigger, and a contactless analog key switch. The key stem is configured to be depressed and move along a linear path over a range of operation. The contact-based mechanical trigger is configured to activate after the key stem is depressed a threshold distance in the range of operation. In response to the contact-based mechanical trigger activating, the contactless analog key switch is configured to detect, at a sample rate, a position of the key stem between the threshold distance and an end of the range of operation after the key stem is depressed. The contact-based mechanical trigger can be a galvanic-type key switch. The contactless analog key switch can be one of an optical key switch, a magnetic key switch, or an inductive key switch.