In a memory device including a ternary memory cell, the ternary memory cell may include: a first inverter and a second inverter cross-coupled in a first node and a second node and including a pull-up device and a pull-down device configured to have a constant current pass therethrough upon turn-off; a first read transistor and a first write transistor which are connected to each other in parallel between the first node and a first bit line; and a second read transistor and a second write transistor which are connected to each other in parallel between the second node and a second bit line, wherein the first read transistor and the second read transistor may have a read access current, which is less than or equal to the constant current, pass therethrough in response to an activated read word line.

Embodiments disclosed herein relate to level shifters of a memory device. Specifically, the level shifters include a first series arrangement of transistors to offset a first transistor. The level shifters also include a second series arrangement of transistors to offset a second transistor. The first series arrangement is opposite the second series arrangement. The output of the first series arrangement is coupled to a first pull-up transistor and configured to cut off a pull-up of the first pull-up transistor to a first voltage. The output of the second series arrangement is coupled to a second pull-up transistor and configured to cut off a pull-up of the second pull-up transistor to the first voltage. The first series arrangement and the second series arrangement are coupled to a second voltage at different times. The series arrangements of transistors enable faster level shifting over conventional level shifters.

A driving circuit includes: a primary driving module configured to receive a first signal and generate a second signal based on the first signal, driving capability of the second signal being greater than that of the first signal; and an auxiliary driving module connected to an output terminal of the primary driving module and configured to receive the first signal and generate an auxiliary driving signal based on the first signal, the auxiliary driving signal being configured to shorten a rise time of the second signal.

An off chip driving system includes a decision circuit, multiple first and second adjustable-enhancement circuits, and multiple first and second drivers. The decision circuit outputs a first and a second decision signal according to a clock and an input data. Each first adjustable-enhancement circuit generates one of first control signals in response to the first and the second decision signal and one of first optional signals. Each second adjustable-enhancement circuit generates one of second control signals in response to the first and the second decision signal and one of second optional signals. Each first driver is coupled to the corresponding first adjustable-enhancement circuit and configured to be enabled in response to the corresponding first control signal. Each second driver is coupled to the corresponding second adjustable-enhancement circuit and configured to be enabled in response to the corresponding second control signal.

According to certain aspects, a level shifter includes a first branch including a first pull-up transistor configured to pull up a first node, and a first pull-down transistor configured to pull down the first node. The level shifter also includes a second branch including a second pull-up transistor configured to pull up a second node, and a second pull-down transistor configured to pull down the second node. The level shifter further includes a third branch including a third pull-up transistor configured to pull up a third node, and a third pull-down transistor configured to pull down the third node. The first branch is cross coupled with the third branch, the second branch is cross coupled with the third branch, the first pull-down transistor has a first channel width, the second pull-down transistor has a second channel width, and the first channel width is greater than the second channel width.

A driving circuit includes: a primary driving module configured to receive a first signal and generate a second signal based on the first signal, driving capability of the second signal being greater than that of the first signal; and an auxiliary driving module connected to an output terminal of the primary driving module and configured to receive the first signal and generate an auxiliary driving signal based on the first signal, the auxiliary driving signal being configured to shorten a rise time of the second signal.

Inter-integrated circuit input circuitry includes a pull-up current circuit and an input circuit. The input circuit includes an output inverter, an input inverter, and a pull-up circuit. The pull-up circuit is coupled to an input of the input inverter, and includes a pull-up transistor and a cascode transistor. The pull-up transistor is coupled to the input of the input inverter. The cascode transistor is coupled to the pull-up current circuit and the pull-up transistor, and configured to isolate the pull-up transistor from capacitance of a conductor coupled to the pull-up current circuit and the input circuit.

A temperature measurement circuit includes a band-gap reference circuit configured to generate a band-gap reference voltage that is fixed regardless of an operation temperature, a reference voltage generator circuit configured to generate a measurement reference voltage by adjusting the band-gap reference voltage, a sensing circuit configured to generate a temperature-variant voltage based on a bias current, where the temperature-variant voltage is varied depending on the operation temperature, an analog-digital converter circuit configured to generate a first digital code indicating the operation temperature based on the measurement reference voltage and the temperature-variant voltage, and an analog built-in self-test (BIST) circuit configured to generate a plurality of flag signals indicating whether each of the band-gap reference voltage, the measurement reference voltage, and a bias voltage corresponding to the bias current is included in a predetermined range.

A level shifter circuit with an intermediate power domain and method for operating the same is disclosed. The level shifter circuit includes an input circuit, an output circuit, and an intermediate circuit. The input circuit is coupled to receive an input signal from a first voltage domain operating according to a first supply voltage, and generates a first intermediate signal. The intermediate circuit receives the first intermediate signal and generates a second intermediate signal. The output circuit receives the intermediate signal and provides an output signal into a second voltage domain operating at a second supply voltage different from the first. A voltage multiplexer is configured to provide one of the first or second supply voltages to the intermediate circuit depending on a state of the input signal.

A level shifter circuit with an intermediate power domain and method for operating the same is disclosed. The level shifter circuit includes an input circuit, an output circuit, and an intermediate circuit. The input circuit is coupled to receive an input signal from a first voltage domain operating according to a first supply voltage, and generates a first intermediate signal. The intermediate circuit receives the first intermediate signal and generates a second intermediate signal. The output circuit receives the intermediate signal and provides an output signal into a second voltage domain operating at a second supply voltage different from the first. A voltage multiplexer is configured to provide one of the first or second supply voltages to the intermediate circuit depending on a state of the input signal.