A memory device and an operation method thereof are provided. The operation method includes: in a first phase, selecting a global signal line, selecting a first string select line, unselecting a second string select line, selecting a first word line, and unselecting a second word line; sensing during a second phase; in a third phase, keeping voltages of the global signal line, the selected first word line and the unselected second word line, unselecting the first string select line and selecting the second string select line to switch voltages of the first and the second string select lines; and sensing during a fourth phase.

Provided is a method and an apparatus for optimizing memory power and provide a method and an apparatus for optimizing memory power by minimizing power consumed by pins of a memory by using an SBR pattern. The method of optimizing memory power using a PAM-4 (Pulse-Amplitude Modulation-4) method includes: setting a ratio and sizes of a pull-up transistor and a pull-down transistor included in a driver according to a smallest size of a plurality of eyes included in an eye diagram of a memory; and setting a reference voltage of a sampler and a phase interpolator (PI) digital code value included in the memory by using a signal bit response (SBR) pattern.

A non-volatile memory device, including a non-volatile memory cell array, a sense amplifier, a random access memory (RAM), and a buffer circuit, is provided. The sense amplifier is configured to generate readout data. The RAM is configured to store write-in data. The buffer circuit generates a detection result according to target data and the readout data, and writes the detection result to the RAM.

Compute-in-memory (CIM) bit cell array circuits include CIM bit cell circuits for multiply-accumulate operations. The CIM bit cell circuits include a memory bit cell circuit for storing a weight data in true and complement form. The CIM bit cell circuits include a true pass-gate circuit and a complement pass-gate circuit for generating a binary product of the weight data and an activation input on a product node. An RWL circuit couples the product node to a ground voltage for initialization. The CIM bit cell circuits also include a plurality of consecutive gates each coupled to at least one of the memory bit cell circuit, the true pass-gate circuit, the complement pass-gate circuit, and the RWL circuit. Each of the CIM bit cell circuits in the CIM bit cell array circuit is disposed in an orientation of a CIM bit cell circuit layout including the RWL circuit.

An off chip driver circuit includes a pull-up circuit and a pull-down circuit. The pull-up circuit includes several first transistors and a first resistance circuit coupled between the first transistors and a input/output pad. The first transistors generate a first voltage to the first resistance circuit. The first resistance circuit transmits, in response to a first control signal, the first voltage to the input/output pad and to have a variable resistance according to the first control signal. The pull-down circuit includes several second transistors and a second resistance circuit coupled between the second transistors and the input/output pad. The second transistors generate a second voltage to the second resistance circuit. The second resistance circuit transmits, in response to a second control signal, the second voltage to the input/output pad and to have a variable resistance according to the second control signal.

An apparatus, a memory device, and a method for storing parameter codes with respect to asymmetric on-die-termination (ODT) are provided. The apparatus is connected to an external device via a signal line, and includes: an on-die termination (ODT) circuit set in a first ODT state; a plurality of signal pins, each of which is connected to the signal line; and an ODT control circuit configured to: identify whether a second ODT state of the external device corresponds to the first ODT state, and based on the apparatus being an asymmetric ODT in which the first ODT state and the second ODT state are different, provide an asymmetric ODT parameter code to the external device, and disable the ODT circuit when a signal is not transmitted through the signal line.

A memory device is provided. The memory device includes a bit cell having a first invertor connected between a first node and a second node and a second invertor connected between the first node and the second node. The first invertor and the second invertor are cross coupled at a first data node and a second data node. The memory device further includes a pull down circuit connected to the second node. The pull down circuit is operative to pull down a voltage of the second node below a ground voltage in response to an enable signal.

A method, implemented in a serializer for quarter rate serialization, is disclosed. The method includes receiving a plurality of in-phase and quarter-phase clock signals defining a quarter phase clock. The method includes receiving a quarter rate data input and sequentially outputting data in accordance with the quarter phase clock. The method includes receiving at least one data input from amongst the quarter rate input and outputting a first logical output in accordance with the in-phase clock signal and the quarter-phase clock signal. The method includes receiving said at least one data input and outputting a second logical output in accordance a complementary in-phase clock signal and a complementary quarter-phase clock signal. The method includes outputting, an output associated with the branch.

Aspects of the invention include a first pull-down device and a second pull-down device, wherein a first drain terminal is connected to a second source terminal, and wherein a first gate terminal is connected to a true read local bitline, wherein a second drain terminal is connected to a compliment read local bit line, and wherein a second gate terminal is connected to a true write global bitline, a third pull-down device and a fourth pull-down device, wherein a third source terminal is connected to the voltage supply, wherein a third drain terminal is connected to a fourth source terminal, and wherein a third gate terminal is connected to the compliment read local bitline, and wherein a fourth drain terminal is connected to the true read local bitline, and wherein a fourth gate terminal is connected to a compliment write global bit line.

A memory device includes a memory cell array having memory cells connected to wordlines and bitlines, and a clock buffer receiving a clock signal for performing a read operation or a write operation on at least one of the memory cells. The clock buffer includes a plurality of serially connected clock repeaters, and the plurality of clock repeaters have at least one pair of clock repeaters having different imbalanced driving capabilities.