Provided are a symmetric memory cell and a BNN circuit. The symmetric memory cell includes a first complementary structure and a second complementary structure, the second complementary structure being symmetrically connected to the first complementary structure in a first direction, wherein the first complementary structure includes a first control transistor configured to be connected to the second complementary structure, the second complementary structure includes a second control transistor, a drain electrode of the second control transistor and a drain electrode of the first control transistor being symmetrically arranged in the first direction and connected to a bit line, and the symmetric memory cell is configured to store a weight value 1 or 0.

The present disclosure provides a method for discharging a memory device after an erase operation. The method comprises grounding a source line of the memory device; and switching on a discharge transistor to connect a bit line of the memory device to the source line by maintaining a constant voltage difference between a gate terminal of the discharge transistor and the source line. The method also includes comparing an electrical potential of the source line with a first predetermined value; and floating the gate terminal of the discharge transistor when the electrical potential of the source line is lower than the first predetermined value.

A method and system for performing a duty cycle correction and quadrature error correction for a quarter-rate architecture TX/RX communication system, including correcting a duty cycle error between a first clock signal and a second clock signal, and correcting a quadrature error between a third clock signal and a fourth clock signal.

A port controller device includes a pull-up resistor, a switching circuit, an enabling circuitry, and a protection circuitry. The pull-up resistor is configured to be coupled to a port, in which the port is configured to be coupled to a channel configuration pin of an electronic device. The switching circuit is configured to selectively transmit a supply voltage to the port via the pull-up resistor according to a first control signal, and turn off a signal path between the pull-up resistor and the port according to a second control signal. The enabling circuitry is configured to generate the first control signal according to an enable signal and the supply voltage. The protection circuitry is configured to generate the second control signal in response to a voltage from the port when the supply voltage is not powered, in order to limit a current from the port.

A memory device is disclosed. The memory device includes word lines, a tracking bit line and a word line driver. The word lines are configured to transmit word line signals to memory cells. The tracking bit line is coupled to a first plurality of tracking cells that are arranged in rows. The word line driver is coupled to the word lines and a control circuit that is coupled through the tracking bit line to the word lines. The word line driver is configured to control a falling edge of each of the word line signals, by receiving each corresponding tracking bit line signal of tracking bit line signals transmitted from the tracking bit line, based on a resistance of a length of the tracking bit line. The length is substantially distanced from each corresponding row of the rows to the control circuit. A method is also disclosed herein.

An non-volatile static random access memory (nvSRAM) is provided in the present invention, including a first pass gate transistor, a second pass gate transistor, a first pull-up transistor, a second pull-up transistor, a first pull-down transistor and a second pull-down transistor, which construct collectively two cross-coupled inverters with two storage nodes, wherein resistive random-access memories (RRAM) are set between the first storage node, the first pull-up transistor and the first pull-down transistor and between the second storage node, the second pull-up transistor and the second pull-down transistor.

The present application provides a storage system, including a plurality of storage chips, each storage chip including a data output unit, the data output units sharing a power supply and a ground terminal, and the data output unit including: a pull-up unit having a control terminal, a first terminal and a second terminal, a first input signal being inputted to the control terminal, the first terminal being electrically connected to the power supply, the second terminal being connected to an output terminal of the data output unit, and the pull-up unit being a first NMOS transistor; and a pull-down unit having a control terminal, a first terminal and a second terminal, a second input signal being inputted to the control terminal, the first terminal being electrically connected to the ground terminal, and the second terminal being connected to the output terminal of the data output unit.

A transmitter includes a driving circuitry configured to drive a channel coupled to an output node by controlling an output impedance of a pull-up path, an output impedance of a pull-down path, or both, according to one or more multi-bit data signals, a pull-up control signal, and a pull-down control signal; a driving control circuit configured to generate the pull-up control signal and the pull-down control signal according to one or more calibration signals and the multi-bit data signals or according to the calibration signals and one or more duplicate multi-bit data signals, the duplicate multi-bit data signals duplicating the multi-bit data signals; and a look-up table storing values of the calibration signals.

A memory system includes memory chips connected to each other. Each of the memory chips includes a memory array, a read/write data strobe pin, a look-up table storage device, a chip number identification circuit, and a control logic circuit. The memory array stores data. The read/write data strobe pin is connected to read/write data strobe pins of other memory chips. The look-up table storage device stores a plurality of trimming shift values related to a number of chip connections in advance. The chip number identification circuit identifies a current number of chip connections according to a state information, and finds a selected trimming shift value from the look-up table storage device. The control logic circuit transmits a data signal in response to a clock signal, and adjusts a setup hold time between the clock signal and the data signal according to the selected trimming shift value.

A data sampling circuit may include a pattern detection circuit configured to generate a slow signal by detecting a pattern of multibit data including input data, and a sampling circuit configured to sample the input data during an activation period of a sampling clock and having an operating speed of the sampling circuit reduced when the slow signal is activated.