A level shifter circuit is provided. In some examples, the level shifter circuit includes a first set of transistors and a second set of transistors coupled between first and second power supply nodes. The control terminals of the first and second lower transistors are coupled to an input node. The level shifter circuit also includes a third set of transistors and a fourth set of transistors coupled between first and third power supply nodes. A control terminal of a third lower transistor is coupled to a second intermediate node, and a control terminal of a fourth lower transistor is coupled to a first intermediate node. Control terminals of the first upper transistor and the fourth upper transistor are coupled to a third intermediate node. Control terminals of the second upper transistor and the third upper transistor are coupled to a fourth intermediate node.

Provided is a Complementary Metal Oxide Semiconductor (CMOS) logic element. The CMOS logic element includes a substrate including a PMOS area, a circuit wiring structure including an insulating layer and a wiring layer alternately stacked on the substrate, wherein the circuit wiring structure includes an NMOS area vertically spaced apart from the PMOS area, a first transistor disposed on the PMOS area, and a second transistor disposed on the NMOS area and complementarily connected to the first transistor, wherein the first transistor includes a first gate electrode, source/drain areas formed on the PMOS area on both sides of the first gate electrode, and a first channel connecting the source and drain areas to each other, wherein the second transistor includes a second gate electrode and a second channel vertically overlapping the second gate electrode, wherein the first channel includes silicon, wherein the second channel includes an oxide semiconductor.

In examples, an input/output (I/O) circuit comprises an input, an output, and a first transistor having a first control terminal, a first current terminal and a second current terminal, the first current terminal coupled to the input. The circuit also includes a second transistor having a second control terminal, a third current terminal and a fourth current terminal, the third current terminal coupled to ground and the fourth current terminal coupled to the second current terminal. The circuit further includes a third transistor having a third control terminal, a fifth current terminal and a sixth current terminal, the third transistor coupled between the input and the output and the third control terminal coupled to the second current terminal.

A voltage level-shifting circuit for an integrated circuit includes an input terminal receiving a voltage signal referenced to an input/output (PO) voltage level. A transistor overvoltage protection circuit includes a first p-type metal oxide semiconductor (PMOS) transistor includes a source coupled to the second voltage supply, a gate receiving an enable signal, and a drain connected to a central node. A first n-type metal oxide semiconductor (NMOS) transistor includes a drain connected to the central node, a gate connected to the input terminal, and a source connected to an output terminal. A second NMOS transistor includes a drain connected to the input terminal, a gate connected to the central node, and a source connected to the output terminal.

A level shift circuit includes: a first transistor connected to ground and having a control terminal; a second transistor connected to the ground and having a control terminal connected to the a terminal of the first transistor; a pull-up circuit connected to a power source and also connected to the first terminal of the first transistor, and having a current mirror circuit constituted by two transistors; a third transistor having a first terminal connected to the first terminal of the first transistor, a second terminal connected to the power source, and a control terminal connected to a first terminal of the second transistor; and a fourth transistor having a first terminal connected to the first terminal of the second transistor, a second terminal connected to the power source, and a control terminal connected to the first terminal of the first transistor.

Some embodiments provide a voltage-level shifter circuit comprising a cross-coupled transistor pull-up network that includes a plurality of diode-connected transistors configured to cause the state of the cross-coupled transistor network to switch at a low current through a pull-down network coupled thereto, such as a current corresponding to near-threshold voltage or sub-threshold voltage operation of the pull-down network.

Inter-integrated circuit input circuitry includes a pull-up current circuit and an input circuit. The input circuit includes an output inverter, an input inverter, and a pull-up circuit. The pull-up circuit is coupled to an input of the input inverter, and includes a pull-up transistor and a cascode transistor. The pull-up transistor is coupled to the input of the input inverter. The cascode transistor is coupled to the pull-up current circuit and the pull-up transistor, and configured to isolate the pull-up transistor from capacitance of a conductor coupled to the pull-up current circuit and the input circuit.

A voltage converter comprises a current mirror circuit, a switch circuit, and a bias circuit electrically connected to a substrate of the switch circuit. When an electrical signal provided by the first electrical signal end is greater than an electrical signal provided by the second electrical signal end, the bias circuit is turned on to turn on the switch circuit, thereby an output end of the mirror current circuit outputs the electrical signal provided by the second electrical signal end. Otherwise, the output end of the current mirror circuit outputs the second voltage signal.

A read threshold voltage can vary over time due to process variation, data retention issues, and program disturb conditions. A storage system can calibrate the read threshold voltage using data from a decoded codeword read from a wordline in the memory. For example, the storage system can use the data instead of syndrome weight in a bit error rate estimate scan (BES). As another example, the storage system can use the data to generate a bit error rate distribution, which can be used instead of a cell voltage distribution histogram. Using these techniques can help reduce latency and power consumption, increase throughput, and improve quality of service.

A circuit includes a transistor input pair, a differential input having a comparator input, and a level shifter. The transistor input pair is adapted to be coupled between a voltage supply and a comparator output. The transistor input pair includes a first transistor having a gate and a drain. The drain of the first transistor is coupled to the comparator output. The level shifter is coupled between the transistor input pair and the differential input. The level shifter includes a second transistor having a gate and a source. The gate of the second transistor is coupled to the comparator input. The source of the second transistor is coupled to the gate of the first transistor.