A level shifter includes a converter configured to generate a first driving signal and a second driving signal; a current sensing circuit configured to detect a current corresponding to a voltage change of second power, and generate a freezing signal according to the current; a freezing circuit configured to control an operation of the converter according to the freezing signal.

A switching circuit includes a high-side transistor and a low-side transistor, each of which is of an N-channel type. A switch and a rectifying element of a PMOS transistor are provided in series between a constant voltage line through which a constant voltage is supplied and a bootstrap line. A comparison circuit operates using a high-side power supply voltage, which is a potential difference between the bootstrap line and a switching line, as a power supply to generate a detection signal indicating a magnitude relationship between the high-side power supply voltage and a threshold voltage. A level shift circuit level-shifts the detection signal down to a signal of which a ground voltage is low. A PMOS driver drives the switch asynchronously with switching of the low-side transistor in response to an output of the level shift circuit.

A driving device comprises a first complementary metal-oxygen-semiconductor circuit and a first comparator. The first complementary metal-oxygen-semiconductor circuit is configured for outputting a power signal or a pull-down signal according to the first input signal. The first comparator comprises a first non-inverting input terminal and a first inverting input terminal. The first non-inverting input terminal is coupled to the first complementary metal-oxygen-semiconductor circuit, and is configured to receive the power signal or the pull-down signal. The first inverting input terminal is configured for receiving a first reference signal, and the first comparator is configured to compare one of the power signal and the pull-down signal and the first reference signal to provide a first driving signal.

An improved chip interface circuit and chip are disclosed. The circuit includes: a voltage divider circuit, including a first resistor, a second resistor and a switch; an input gate circuit, including a MOS transistor P1 and a MOS transistor N1; one end of the first resistor is connected to the input terminal, and the drains of P1 and N1 are connected to the first terminal, wherein the first terminal is used to connect the main circuit of the chip, and the switch is turned on when the input terminal receives a high-voltage input voltage. The circuit uses low-voltage transistors combined with a voltage divider circuit to realize the chip interface circuit, thereby achieving good interface speed characteristics, and avoiding the problem that the chip cannot work normally when the operating voltage is low due to the high threshold voltage of the high-voltage transistor.

An aspect of the disclosure relates to an apparatus including a first field effect transistor (FET) including a first gate configured to receive a first input signal that varies in accordance with a first voltage domain; and a first inverter including a first input configured to receive a second input signal that varies in accordance with a second voltage domain, and a first output configured to generate a first output signal that varies in accordance with the second voltage domain, wherein the first output signal is based on the first and second input signals, and wherein the first FET and the first inverter are coupled in series between first and second voltage rails. Per another aspect, the apparatus includes additional circuitry to allow the apparatus to process signals in accordance with a third voltage domain.

A storage device is provided that allows a controller to directly access bytes of data in data latches connected to memory, as opposed to through controller RAM. The storage device may include a memory, a plurality of data latches connected to the memory, and a controller coupled to each of the data latches. The controller is configured to access one or more bytes of decoded data in one or more of the data latches. For instance, the controller may provide a command including an address for data in the memory, and may process one or more bytes of the data in at least one of the data latches in response to the command. The controller may also store a mapping of addresses for each of the word lines, including the address provided in the command. As a result, operation latency may be reduced and controller RAM savings achieved.

A level shifter includes a buffer circuit, a first shift circuit, and a second shift circuit. The buffer circuit provides a first signal and a first inverted signal to the first shift circuit, such that the first shift circuit provides a second signal and a second inverted signal to the second shift circuit. The second shift circuit generates a plurality of output signals according to the second signal and the second inverted signal. The first shift circuit includes a plurality of first stacking transistors and a first voltage divider circuit. The first voltage divider circuit is electrically coupled between a first system high voltage terminal and a system low voltage terminal. The first voltage divider circuit is configured to provide a first inner bias to gate terminals of the first stacking transistors.

The present disclosure discloses a pre-driver circuit and a driving device. The pre-driver circuit includes a first transistor, a second transistor, and a resistive component. The first transistor has a first terminal coupled to a first voltage, a second terminal for outputting a pre-driving signal, and a control terminal for receiving a first control signal. The second transistor has a first terminal coupled to the second terminal of the first transistor, a second terminal coupled to a second voltage, and a control terminal for receiving the first control signal. The resistive component has a first terminal coupled to the first terminal of the second transistor, and a second terminal coupled to the second terminal of the second transistor. One of the first transistor and the second transistor is a P-type transistor, and the other is an N-type transistor.

A multiplier cell is derived from a 1-bit full adder and an AND gate. The 1-bit full adder is derived from majority and/or minority gates. The majority and/or minority gates include non-linear polar material (e.g., ferroelectric or paraelectric material). A reset mechanism is provided to reset the nodes across the non-linear polar material. The multiplier cell is a hybrid of majority and/or minority gates and complementary metal oxide semiconductor (CMOS) based inverters and/or buffers. The adder uses a non-linear polar capacitor to retain charge with fewer transistors than traditional CMOS sequential circuits. The non-linear polar capacitor includes ferroelectric material, paraelectric material, or non-linear dielectric. Input signals are received by respective terminals of capacitors having non-linear polar material. The other terminals of these capacitors are coupled to a node where the majority function takes place for the inputs.

A multi-bit level shifter that has a plurality of level shifters, each of which is configured to receive an input signal in a first voltage domain and provide a corresponding output signal in a second voltage domain. The level shifters each have an enable node. An enable circuit includes an output terminal connected to the enable node of each of the plurality of level shifters, and each of the plurality of level shifters is configured to output the corresponding output signals in response an enable signal received by the enable circuit.