A non-volatile memory includes a first memory cell. The first memory cell includes five transistors and a first capacitor. The first transistor includes a first gate, a first terminal and a second terminal. The second transistor includes a second gate, a third terminal and a fourth terminal. The third transistor includes a third gate, a fifth terminal and a sixth terminal. The fourth transistor includes a fourth gate, a seventh terminal and an eighth terminal. The fifth transistor includes a fifth gate, a ninth terminal and a tenth terminal. The first capacitor is connected between the third gate and a control line. The third gate is a floating gate. The second terminal is connected with the third terminal. The fourth terminal is connected with the fifth terminal. The sixth terminal is connected with the seventh terminal. The eighth terminal is connected with the ninth terminal.

A method for operating a NVM cell is disclosed. The NVM cell includes a select transistor and a floating gate transistor serially connected to the select transistor on an N well. The floating gate transistor includes a floating gate and a floating gate extension capacitively coupled to an erase gate region. The method includes erasing the NVM cell by applying an N well voltage V.sub.NW to the N well, wherein V.sub.NW>0V; applying a source line voltage V.sub.SL to a source doping region of the select transistor, wherein V.sub.SL=0V; applying a word line voltage V.sub.WL to a select gate of the select transistor, wherein V.sub.WL=0V; applying a bit line voltage V.sub.BL to a drain doping region of the floating gate transistor, wherein V.sub.BL=0V; and applying an erase line voltage V.sub.EL to the erase gate region, wherein V.sub.EL=V.sub.EE.

A method for operating a NVM cell is disclosed. The NVM cell includes a select transistor and a floating gate transistor serially connected to the select transistor on an N well. The floating gate transistor includes a floating gate and a floating gate extension capacitively coupled to an erase gate region. The method includes erasing the NVM cell by applying an N well voltage V.sub.NW to the N well, wherein V.sub.NW>0V; applying a source line voltage V.sub.SL to a source doping region of the select transistor, wherein V.sub.SL=0V; applying a word line voltage V.sub.WL to a select gate of the select transistor, wherein V.sub.WL=0V; applying a bit line voltage V.sub.BL to a drain doping region of the floating gate transistor, wherein V.sub.BL=0V; and applying an erase line voltage V.sub.EL to the erase gate region, wherein V.sub.EL=V.sub.EE.

A biased-transistor-module comprising: a module-input-terminal; a module-output-terminal; a reference-terminal; a module-supply-terminal configured to receive a supply voltage; a module-reference-voltage-terminal configured to receive a module reference voltage; a main-transistor having a main-control-terminal, a main-first-conduction-channel-terminal and a main-second-conduction-channel-terminal, wherein the main-first-conduction-channel-terminal is connected to the module-output-terminal, and the main-second-conduction-channel-terminal is connected to the reference-terminal, and the main-control-terminal is connected to an input-signal-node, wherein the input-signal-node is connected to the module-input-terminal; and a bias-circuit. The bias-circuit comprises: a first-bias-transistor; a first-bias-resistor; a second-bias-transistor; and a second-bias-resistor.

A biased-transistor-module comprising: a module-input-terminal; a module-output-terminal; a reference-terminal; a module-supply-terminal configured to receive a supply voltage; a module-reference-voltage-terminal configured to receive a module reference voltage; a main-transistor having a main-control-terminal, a main-first-conduction-channel-terminal and a main-second-conduction-channel-terminal, wherein the main-first-conduction-channel-terminal is connected to the module-output-terminal, and the main-second-conduction-channel-terminal is connected to the reference-terminal, and the main-control-terminal is connected to an input-signal-node, wherein the input-signal-node is connected to the module-input-terminal; and a bias-circuit. The bias-circuit comprises: a first-bias-transistor; a first-bias-resistor; a second-bias-transistor; and a second-bias-resistor.

A nonvolatile memory (NVM) cell includes a semiconductor substrate having a first OD region and a second OD region for forming an erase gate (EG) region. The second OD region is spaced apart from the first OD region and is separated from the first OD region by a trench isolation region. A select transistor is disposed on the first OD region. A floating gate transistor is serially connected to the select transistor and is also disposed on the first OD region. The floating gate transistor includes a floating gate overlying the first OD region. A first floating gate extension continuously extends from the floating gate to the second OD region. The first floating gate extension comprises a P.sup.+ doped segment and an N.sup.+ doped segment with a P.sup.+/N.sup.+ interface therebetween.

A method for operating a NVM cell is disclosed. The NVM cell includes a select transistor and a floating gate transistor serially connected to the select transistor on an N well. The floating gate transistor includes a floating gate and a floating gate extension capacitively coupled to an erase gate region. The method includes erasing the NVM cell by applying an N well voltage V.sub.NW to the N well, wherein V.sub.NW>0V; applying a source line voltage V.sub.SL to a source doping region of the select transistor, wherein V.sub.SL=0V; applying a word line voltage V.sub.WL to a select gate of the select transistor, wherein V.sub.WL=0V; applying a bit line voltage V.sub.BL to a drain doping region of the floating gate transistor, wherein V.sub.BL=0V; and applying an erase line voltage V.sub.EL to the erase gate region, wherein V.sub.EL=V.sub.EE .

A non-volatile memory includes a first memory cell. The first memory cell includes five transistors and a first capacitor. The first transistor includes a first gate, a first terminal and a second terminal. The second transistor includes a second gate, a third terminal and a fourth terminal. The third transistor includes a third gate, a fifth terminal and a sixth terminal. The fourth transistor includes a fourth gate, a seventh terminal and an eighth terminal. The fifth transistor includes a fifth gate, a ninth terminal and a tenth terminal. The first capacitor is connected between the third gate and a control line. The third gate is a floating gate. The second terminal is connected with the third terminal. The fourth terminal is connected with the fifth terminal. The sixth terminal is connected with the seventh terminal. The eighth terminal is connected with the ninth terminal.

A nonvolatile memory (NVM) cell includes a semiconductor substrate having a first OD region and a second OD region for forming an erase gate (EG) region. The second OD region is spaced apart from the first OD region and is separated from the first OD region by a trench isolation region. A select transistor is disposed on the first OD region. A floating gate transistor is serially connected to the select transistor and is also disposed on the first OD region. The floating gate transistor includes a floating gate overlying the first OD region. A first floating gate extension continuously extends from the floating gate to the second OD region. The first floating gate extension comprises a P.sup.+ doped segment and an N.sup.+ doped segment with a P.sup.+/N.sup.+ interface therebetween.

A driving circuit includes a first driver, a switching circuit and a second driver. The first driver receives an input signal and an inverted input signal, and generates a driving signal. The switching circuit receives the driving signal and a first mode signal. Moreover, an output signal is outputted from an output terminal. The second driver is connected with the output terminal.