A circuit includes a plurality of first counting gates, a first ternary half adder (THA) and a second THA that are connected to the plurality of first counting gates, a third THA configured to receive a sum output signal of the first THA and a sum output signal of the second THA, a first ternary sum gate configured to receive a carry output signal of the first THA and a carry output signal of the second THA, and a second ternary sum gate configured to receive a carry output signal of the third THA and an output signal of the first ternary sum gate, wherein the third THA and the second ternary sum gate may be configured to output voltage signals corresponding to a number of drain voltages among input signals applied to the plurality of first counting gates.

The present application discloses a dual-port SRAM having two ports. On a layout, pass gates connecting to the two ports are disposed near pull down transistors of corresponding memory nodes. A cell layout structure of the SRAM cell structure is centrosymmetric. In a first subunit layout structure, a pass gate and a first pull down transistor share the same active region, and an active region of the other pull down transistor is disposed between active regions of the first pull down transistor and a first pull up transistor. The present application improves the symmetry of read paths of the two memory nodes from two ports thus the symmetry of read currents, therefore the variation of the electrical performance of PMOS transistors is reduced and the stability of the electrical performance of the PMOS transistors is improved.

The present application discloses a dual-port SRAM having two ports. On a layout, pass gates connecting to the two ports are disposed near pull down transistors of corresponding memory nodes. A cell layout structure of the SRAM cell structure is centrosymmetric. In a first subunit layout structure, a pass gate and a first pull down transistor share the same active region, and an active region of the other pull down transistor is disposed between active regions of the first pull down transistor and a first pull up transistor. The present application improves the symmetry of read paths of the two memory nodes from two ports thus the symmetry of read currents, therefore the variation of the electrical performance of PMOS transistors is reduced and the stability of the electrical performance of the PMOS transistors is improved.

A high-speed voltage clamping circuit includes p-type field effect transistor (PFET) biasing circuit, an n-type field effect transistor (NFET) biasing circuit, and a field effect transistor (FET) clamp circuit. The PFET biasing circuit is configured to generate a PFET biasing voltage. The NFET biasing circuit is configured to generate a NFET biasing voltage. The FET clamp circuit is in signal communication with the PFET biasing circuit and the NFET biasing circuit. The PFET biasing circuit controls operation of the clamping circuit in response to a voltage overshoot event and the NFET biasing circuit controls operation of the clamping circuit in response to a voltage undershoot event.

A high-speed voltage clamping circuit includes p-type field effect transistor (PFET) biasing circuit, an n-type field effect transistor (NFET) biasing circuit, and a field effect transistor (FET) clamp circuit. The PFET biasing circuit is configured to generate a PFET biasing voltage. The NFET biasing circuit is configured to generate a NFET biasing voltage. The FET clamp circuit is in signal communication with the PFET biasing circuit and the NFET biasing circuit. The PFET biasing circuit controls operation of the clamping circuit in response to a voltage overshoot event and the NFET biasing circuit controls operation of the clamping circuit in response to a voltage undershoot event.

A multi-loop controller component for an electric discharge machining (EDM) system includes a plurality of power loop circuits coupled to an output of a power supply of the EDM system and configured to receive DC electric power from the power supply. Each power loop circuits electrically-isolated from other power loop circuits. The multi-loop controller component also includes a plurality of transistors. Each transistor is coupled to a respective power loop circuit and is configured to switch between an ON state and an OFF state to generate a pulse of the DC electric power through the respective power loop circuit. In addition, the multi-loop controller component has a drive controller coupled to the plurality of transistors. The drive controller is configured to transmit at least one control signal to at least one of the transistors to facilitate switching the transistor between the ON state and the OFF state.

A multi-loop controller component for an electric discharge machining (EDM) system includes a plurality of power loop circuits coupled to an output of a power supply of the EDM system and configured to receive DC electric power from the power supply. Each power loop circuits electrically-isolated from other power loop circuits. The multi-loop controller component also includes a plurality of transistors. Each transistor is coupled to a respective power loop circuit and is configured to switch between an ON state and an OFF state to generate a pulse of the DC electric power through the respective power loop circuit. In addition, the multi-loop controller component has a drive controller coupled to the plurality of transistors. The drive controller is configured to transmit at least one control signal to at least one of the transistors to facilitate switching the transistor between the ON state and the OFF state.

A high-speed voltage clamping circuit includes p-type field effect transistor (PFET) biasing circuit, an n-type field effect transistor (NFET) biasing circuit, and a field effect transistor (FET) clamp circuit. The PFET biasing circuit is configured to generate a PFET biasing voltage. The NFET biasing circuit is configured to generate a NFET biasing voltage. The FET clamp circuit is in signal communication with the PFET biasing circuit and the NFET biasing circuit. The PFET biasing circuit controls operation of the clamping circuit in response to a voltage overshoot event and the NFET biasing circuit controls operation of the clamping circuit in response to a voltage undershoot event.

A high-speed voltage clamping circuit includes p-type field effect transistor (PFET) biasing circuit, an n-type field effect transistor (NFET) biasing circuit, and a field effect transistor (FET) clamp circuit. The PFET biasing circuit is configured to generate a PFET biasing voltage. The NFET biasing circuit is configured to generate a NFET biasing voltage. The FET clamp circuit is in signal communication with the PFET biasing circuit and the NFET biasing circuit. The PFET biasing circuit controls operation of the clamping circuit in response to a voltage overshoot event and the NFET biasing circuit controls operation of the clamping circuit in response to a voltage undershoot event.

The present disclosure relates to a logic operation circuit for computation in memory, which comprises an equivalent circuit input terminal, a reference circuit input terminal, a reset input terminal and an output terminal; wherein the equivalent circuit input terminal is configured to input the equivalent voltage of a memory computing array, the reset input terminal is configured to input a reset voltage, and the reference circuit input terminal is configured to input a reference voltage; the logic operation circuit for computation in memory outputs different output voltages according to the difference between the equivalent voltage and the reference voltage, and the output voltage is output through the output terminal; the logic operation circuit of the present disclosure has a simple structure, reduced complexity and effectively saved resources.