A gate driver includes a drive signal input terminal, a drive signal output terminal, a gate drive circuit, and a serial communication interface. The drive signal input terminal is configured to receive a gate drive signal. The gate drive circuit is coupled to the drive signal input terminal and the drive signal output terminal. The gate drive circuit is configured to provide the gate drive signal to the drive signal output terminal. The serial communication interface is coupled to the drive signal input terminal.

A gate driver includes a drive signal input terminal, a drive signal output terminal, a gate drive circuit, and a serial communication interface. The drive signal input terminal is configured to receive a gate drive signal. The gate drive circuit is coupled to the drive signal input terminal and the drive signal output terminal. The gate drive circuit is configured to provide the gate drive signal to the drive signal output terminal. The serial communication interface is coupled to the drive signal input terminal.

A gate driver includes a drive signal input terminal, a drive signal output terminal, a gate drive circuit, and a serial communication interface. The drive signal input terminal is configured to receive a gate drive signal. The gate drive circuit is coupled to the drive signal input terminal and the drive signal output terminal. The gate drive circuit is configured to provide the gate drive signal to the drive signal output terminal. The serial communication interface is coupled to the drive signal input terminal.

Disclosed is a semiconductor logic element including a field effect transistor of the first conductivity type and a field effect transistor of the second conductivity type. A gate of the first FET is an input of the semiconductor logic element, a drain of the second FET is referred to as the output of the semiconductor logic element and a source of the second FET is the source of the semiconductor logic element. By applying applicable potentials to the terminals of the field effect transistors it is possible to influence the state of the output of the logic element. Also disclosed are different kinds of logic circuitries including the described logic element.

Disclosed is a semiconductor logic element including a field effect transistor of the first conductivity type and a field effect transistor of the second conductivity type. A gate of the first FET is an input of the semiconductor logic element, a drain of the second FET is referred to as the output of the semiconductor logic element and a source of the second FET is the source of the semiconductor logic element. By applying applicable potentials to the terminals of the field effect transistors it is possible to influence the state of the output of the logic element. Also disclosed are different kinds of logic circuitries including the described logic element.

Disclosed is a semiconductor logic element including a field effect transistor of the first conductivity type and a field effect transistor of the second conductivity type. A gate of the first FET is an input of the semiconductor logic element, a drain of the second FET is referred to as the output of the semiconductor logic element and a source of the second FET is the source of the semiconductor logic element. By applying applicable potentials to the terminals of the field effect transistors it is possible to influence the state of the output of the logic element. Also disclosed are different kinds of logic circuitries including the described logic element.

Disclosed is a semiconductor logic element including a field effect transistor of the first conductivity type and a field effect transistor of the second conductivity type. A gate of the first FET is an input of the semiconductor logic element, a drain of the second FET is referred to as the output of the semiconductor logic element and a source of the second FET is the source of the semiconductor logic element. By applying applicable potentials to the terminals of the field effect transistors it is possible to influence the state of the output of the logic element. Also disclosed are different kinds of logic circuitries including the described logic element.

Disclosed is a semiconductor logic element having a field effect transistor of the first conductivity type and a field effect transistor of the second conductivity type. A gate of the first FET is an input of the semiconductor logic element, a drain of the second FET is referred to as the output of the semiconductor logic element and a source of the second FET is the source of the semiconductor logic element. By applying applicable potentials to the terminals of the field effect transistors it is possible to influence the state of the output of the logic element. Also disclosed are different kinds of logic circuitries with the described logic element.

Disclosed is a semiconductor logic element having a field effect transistor of the first conductivity type and a field effect transistor of the second conductivity type. A gate of the first FET is an input of the semiconductor logic element, a drain of the second FET is referred to as the output of the semiconductor logic element and a source of the second FET is the source of the semiconductor logic element. By applying applicable potentials to the terminals of the field effect transistors it is possible to influence the state of the output of the logic element. Also disclosed are different kinds of logic circuitries with the described logic element.

A gate driver includes a drive signal input terminal, a drive signal output terminal, a gate drive circuit, and a serial communication interface. The drive signal input terminal is configured to receive a gate drive signal. The gate drive circuit is coupled to the drive signal input terminal and the drive signal output terminal. The gate drive circuit is configured to provide the gate drive signal to the drive signal output terminal. The serial communication interface is coupled to the drive signal input terminal.