An asynchronous multi-cycle reset synchronization circuit that can correlate any number of resets and synchronous clocks with simultaneous reset de-assertion and removal of reset assertion crossing hazards. The asynchronous multi-cycle reset synchronization circuit can also be paired with a synchronous multi-cycle reset synchronization circuit to correlate same domain asynchronous and synchronous resets. Also described is a synchronous reset multi-cycle synchronization circuit that correlates with any number of asynchronous resets and guarantees simultaneous reset de-assertion.

A circuit includes a set of multiple bit generating cells. One or more adjustable current sources is coupled to introduce perturbations into outputs of the bit generating cells. Based on the perturbations, the outputs of a subset less than all of the bit generating cells are selected, and applied as a control.

Methods and apparatuses for an optimal timer array using a single reference counter are presented. According to one aspect, timers of the timer array use the single reference counter to process different timed trigger requests. A count translation logic block translates counts corresponding to the requested timed triggers to target values of the reference counter. Register arrays that include the target values and active/inactive status flags of the timers are used to implement specific timers. Comparators are used to compare values of the reference counter to the target values to establish expiration of the requested timed triggers. A target translation logic block translates a current value of the reference counter to an offset value from the target values for monitoring by an external circuit.

Integrated circuit devices are provided. The devices may include a substrate including a first region, a second region and a boundary region between the first and second regions. The first and second regions may be spaced apart from each other in a first horizontal direction. The devices may also include a first latch on the first region, a second latch on the second region, and a conductive layer extending in the first horizontal direction and crossing over the boundary region. The first latch may include a first vertical field effect transistor (VFET), a second VFET, a third VFET, and a fourth VFET. The second latch may include a fifth VFET, a sixth VFET, a seventh VFET, and an eighth VFET. The first and seventh VFETs may be arranged along the first horizontal direction. Portions of the conductive layer may include gate electrodes of the first and seventh VFETs, respectively.

An integrated circuit includes a plurality of tiles. Each tile includes a processor, a switch including switching circuitry to forward data over data paths from other tiles to the processor and to switches of other tiles, and a switch memory that stores instruction streams that are able to operate independently for respective output ports of the switch. Also disclosed is a direct memory access (DMA) scheme in which sizes of DMA transfers are limited according to whether a cache miss has occurred.

A drive system (300) includes a plurality of power cells (312) supplying power to one or more output phases (A, B, C), each power cell (312) having multiple switching devices (315a-d) incorporating semiconductor switches, and a control system (400) in communication with the plurality of power cells (312) and controlling operation of the plurality of power cells (312), wherein the control system (400) includes a system on chip (410) with one or more central processing units (412, 414) and a field programmable gate array (416) in communication with the one or more central processing units (412, 414).

A three-dimensional stacked integrated circuit (3D SIC) having a non-volatile memory die, a volatile memory die, and a logic die. The non-volatile memory die, the volatile memory die, and the logic die are stacked. The 3D SIC is partitioned into a plurality of columns that are perpendicular to each of the stacked dies. Each column of the plurality of columns is configurable to be bypassed via configurable routes. When the configurable routes are used, functionality of a failing part of the column is re-routed to a corresponding effective part of a neighboring column.

A three-dimensional stacked integrated circuit (3D SIC) having a non-volatile memory die, a volatile memory die, and a logic die. The non-volatile memory die, the volatile memory die, and the logic die are stacked. The 3D SIC is partitioned into a plurality of columns that are perpendicular to each of the stacked dies. Each column of the plurality of columns is configurable to be bypassed via configurable routes. When the configurable routes are used, functionality of a failing part of the column is re-routed to a corresponding effective part of a neighboring column.

Systems and methods related to multi-die integrated circuits that may include dies having high-speed core interconnects. The high-speed core interconnects may be used to directly connect two adjacent dies.

Systems and methods related to multi-die integrated circuits that may include dies having high-speed core interconnects. The high-speed core interconnects may be used to directly connect two adjacent dies.