A narrow pulse generation circuit used in a sequential equivalent sampling system. The circuit comprises a crystal oscillator, an edge sharpening circuit, an avalanche transistor single-tube amplifying circuit and a shaping network connected in sequence, wherein the edge sharpening circuit is used for carrying out edge sharpening on a square wave signal generated by the crystal oscillator; the avalanche transistor single-tube amplifying circuit is used for carrying out avalanche amplification on the sharpened square wave signal to generate a Gaussian pulse signal to adjust the amplitude of a pulse; and the RC shaping network is used for shaping the Gaussian pulse signal to adjust the pulse width at the bottom of the pulse to form a narrow pulse signal. The narrow pulse circuit has a simple structure and narrow pulse width at the bottom and facilitates increasing a signal-to-noise ratio of a whole sequential sampling system.

A narrow pulse generation circuit used in a sequential equivalent sampling system. The circuit comprises a crystal oscillator, an edge sharpening circuit, an avalanche transistor single-tube amplifying circuit and a shaping network connected in sequence, wherein the edge sharpening circuit is used for carrying out edge sharpening on a square wave signal generated by the crystal oscillator; the avalanche transistor single-tube amplifying circuit is used for carrying out avalanche amplification on the sharpened square wave signal to generate a Gaussian pulse signal to adjust the amplitude of a pulse; and the RC shaping network is used for shaping the Gaussian pulse signal to adjust the pulse width at the bottom of the pulse to form a narrow pulse signal. The narrow pulse circuit has a simple structure and narrow pulse width at the bottom and facilitates increasing a signal-to-noise ratio of a whole sequential sampling system.

A narrow pulse generation circuit used in a sequential equivalent sampling system. The circuit comprises a crystal oscillator, an edge sharpening circuit, an avalanche transistor single-tube amplifying circuit and a shaping network connected in sequence, wherein the edge sharpening circuit is used for carrying out edge sharpening on a square wave signal generated by the crystal oscillator; the avalanche transistor single-tube amplifying circuit is used for carrying out avalanche amplification on the sharpened square wave signal to generate a Gaussian pulse signal to adjust the amplitude of a pulse; and the RC shaping network is used for shaping the Gaussian pulse signal to adjust the pulse width at the bottom of the pulse to form a narrow pulse signal. The narrow pulse circuit has a simple structure and narrow pulse width at the bottom and facilitates increasing a signal-to-noise ratio of a whole sequential sampling system.

An acoustic wave device includes a piezoelectric substrate made of LiNbO.sub.3, and a dielectric film provided on the piezoelectric substrate to cover first and second IDT electrodes on the piezoelectric substrate. The first and second IDT electrodes include main electrode layers. When wave lengths determined by electrode finger pitches of the first and second IDT electrodes are λ.sub.1 and λ.sub.2, respectively, the average value thereof is λ.sub.0, λ.sub.1/λ.sub.0=1+X, and λ.sub.2/λ.sub.0=1−X, a relationship of 0.05≤X≤0.65 is satisfied. The wavelength λ.sub.1 is the longest, and the wavelength λ.sub.2 is the shortest. In Euler angles (φ, θ, ψ) of the piezoelectric substrate, φ is 0°±5°, ψ is 0°±10°, and θ satisfies Expression 1, wherein a relationship of B.sub.1<T×r≤0.10λ.sub.0 and B.sub.2<T×r≤0.10λ.sub.0 are satisfied.

The present disclosure provides a frequency-converting super-regenerative transceiver with a frequency mixer coupled to a resonator and a feedback element having a controllable gain. The frequency-converting super-regenerative transceiver utilizes the frequency mixer to shift the incoming frequencies, based on a controlled oscillator, to match the frequency of operation of the super-regenerative transceiver. The frequency-converting super-regenerative transceivers described herein permit signal data capture over a broad range of frequencies and for a range of communication protocols. The frequency-converting super-regenerative transceivers described herein are tunable, consume very little power for operation and maintenance, and permit long term operation even when powered by very small power sources (e.g., coin batteries).

A RFID signal repeater system includes a RFID repeater circuit and a housing body. The repeater circuit has a first RFID antenna and a second RFID antenna being connected by an electrical path. A RFID signal captured at one of the antennas is repeated at the other antenna. The housing body includes a first housing portion housing the first antenna and supporting a RFID reader device, whereby the RFID device is in RFID communication with the first antenna when supported by the first housing portion. The body also includes a second housing portion mechanically connected to the first housing portion and configured to support the second antenna and a programmable RFID device, whereby the programmable RFID device is in RFID communication with the second antenna when supported by the second housing portion. The housing body can have various form factors. A power repeater enabling wireless charging can also be provided.

An acoustic wave device includes a piezoelectric substrate made of LiNbO.sub.3, and a dielectric film provided on the piezoelectric substrate to cover first and second IDT electrodes on the piezoelectric substrate. The first and second IDT electrodes include main electrode layers. When wave lengths determined by electrode finger pitches of the first and second IDT electrodes are λ.sub.1 and λ.sub.2, respectively, the average value thereof is λ.sub.0, λ.sub.1/λ.sub.0=1+X, and λ.sub.2/λ.sub.0=1−X, a relationship of 0.05≤X≤0.65 is satisfied. The wavelength λ.sub.1 is the longest, and the wavelength λ.sub.2 is the shortest. In Euler angles (φ, θ, ψ) of the piezoelectric substrate, φ is 0°±5°, ψ is 0°±10°, and θ satisfies Expression 1, wherein a relationship of B.sub.1<T×r≤0.10λ.sub.0 and B.sub.2<T×r≤0.10λ.sub.0 are satisfied.

The present invention discloses radio frequency transmitting and receiving devices and an unmanned aerial vehicle system. The radio frequency transmitting device comprises: a first crystal oscillator, configured to provide a first clock signal with a frequency f; a reference signal receiving circuit, configured to receive a reference signal with a frequency (N−1)×f transmitted by a radio frequency receiving device; a frequency mixer, configured to perform frequency mixing processing on the first clock signal and the reference signal to obtain a carrier signal with a frequency N×f; a modulating circuit, configured to load a signal to be transmitted on the carrier signal, to obtain a frequency band signal; and a first transmitting circuit, configured to transmit the frequency band signal to the radio frequency receiving device. The radio frequency transmission performed according to the present invention has higher resistance to instantaneous vibration.

A radio frequency (RF) switch circuit is provided. The switch includes a branch configured and arranged to transfer an RF signal coupled at an input node to an output node when a control signal is at a first logic value. A first transistor in the branch includes a first current electrode coupled at the input node and a second current electrode coupled to an intermediate node. The first transistor is formed in a first isolation well coupled to a bias voltage supply terminal. A second transistor in the branch includes a first current electrode coupled to the second current electrode of the first transistor at the intermediate node and a second current electrode coupled at the output node. The second transistor is formed in a second isolation well coupled to the bias voltage supply terminal. A third transistor includes a first current electrode coupled at the first intermediate node and a second current electrode coupled at a first supply terminal.

A radio frequency (RF) switch circuit is provided. The switch includes a branch configured and arranged to transfer an RF signal coupled at an input node to an output node when a control signal is at a first logic value. A first transistor in the branch includes a first current electrode coupled at the input node and a second current electrode coupled to an intermediate node. The first transistor is formed in a first isolation well coupled to a bias voltage supply terminal. A second transistor in the branch includes a first current electrode coupled to the second current electrode of the first transistor at the intermediate node and a second current electrode coupled at the output node. The second transistor is formed in a second isolation well coupled to the bias voltage supply terminal. A third transistor includes a first current electrode coupled at the first intermediate node and a second current electrode coupled at a first supply terminal.