A microwave receiver includes a magnetoresistive element to which a microwave is input, a magnetic field application unit, and a DC bias current application unit. The magnetoresistive element includes a free magnetic layer, a fixed magnetic layer, and a nonmagnetic spacer layer interposed between the free magnetic layer and the fixed magnetic layer. The magnetic field application unit applies a magnetic field to the free magnetic layer. The DC bias current application unit applies a DC bias current to the magnetoresistive element, and includes an input terminal. The DC bias current is made variable by adjusting a DC voltage that is applied to the DC bias current application unit via the input terminal.

A radiofrequency transponder includes a radiating antenna and an electronic device. The radiating antenna is a single-strand helical spring forming a dipole antenna. The electronic device includes an electronic chip and a primary antenna, which are encapsulated at least partially in a rigid, electrically insulating mass. The primary antenna is electromagnetically coupled to the radiating antenna.

A regenerative differential receiver includes, for example, a transformer arranged to receive a modulated differential signal. A first detector is arranged to source a first output current for indicating a first power level in response to falling voltage of a first line of the modulated differential signal. A second detector is arranged to sink a second output current for indicating a second power level in response to rising voltage of a first line of the modulated differential signal. A cross-coupled latch is arranged to latch a state in response to the first and second power levels. The cross-coupled latch provides, for example, weak non-linear regeneration for increasing receiver gain and maximum operating frequencies.

This invention, falling into the field of radio communication technology, discloses 5G millimeter wave dual-band dual-mode mixer and wireless communication terminal. In the said 5G millimeter wave dual-band dual-mode mixer, the first MOSFET is connected to the source of the second MOSFET and the third MOSFET through its drain, with the first MOSFET connected to the drain of the fourth MOSFET through its drain. The second MOSFET is connected to one end of the first capacitor through its gate, with the other end of the first capacitor connected to the drain of the third MOSFET. The third MOSFET is connected to one end of the second capacitor through its gate and the other end of the second capacitor is connected to the drain of the second MOSFET.

This invention, falling into the field of radio communication technology, discloses 5G millimeter wave dual-band dual-mode mixer and wireless communication terminal. In the said 5G millimeter wave dual-band dual-mode mixer, the first MOSFET is connected to the source of the second MOSFET and the third MOSFET through its drain, with the first MOSFET connected to the drain of the fourth MOSFET through its drain. The second MOSFET is connected to one end of the first capacitor through its gate, with the other end of the first capacitor connected to the drain of the third MOSFET. The third MOSFET is connected to one end of the second capacitor through its gate and the other end of the second capacitor is connected to the drain of the second MOSFET.

A composite conductive material includes at least graphene-like exfoliated from a graphite-based graphite carbon material and a conductive material dispersed in a base material. The graphite-based carbon material has a rhombohedral graphite layer (3R) and a hexagonal graphite layer (2H), wherein a Rate (3R) of the rhombohedral graphite layer (3R) and the hexagonal graphite layer (2H), based on an X-ray diffraction method, which is defined by following Equation 1 is 31% or more:
Rate(3R)=P3/(P3+P4)100(Equation 1)
wherein P3 is a peak intensity of a (101) plane of the rhombohedral graphite layer (3R) based on the X-ray diffraction method, and P4 is a peak intensity of a (101) plane of the hexagonal graphite layer (2H) based on the X-ray diffraction method.

An acoustic wave device includes a piezoelectric substrate made of LiNbO.sub.3, and a dielectric film provided on the piezoelectric substrate to cover first and second IDT electrodes on the piezoelectric substrate. The first and second IDT electrodes include main electrode layers. When wave lengths determined by electrode finger pitches of the first and second IDT electrodes are .sub.1 and .sub.2, respectively, the average value thereof is .sub.0, .sub.1/.sub.0=1+X, and .sub.2/.sub.0=1X, a relationship of 0.05X0.65 is satisfied. The wavelength .sub.1 is the longest, and the wavelength .sub.2 is the shortest. In Euler angles (, , ) of the piezoelectric substrate, is 05, is 010, and satisfies Expression 1, wherein a relationship of B.sub.1<Tr0.10.sub.0 and B.sub.2<Tr0.10.sub.0 are satisfied.

A microwave receiver includes a magnetoresistive element to which a microwave is input, a magnetic field application unit, and a DC bias current application unit. The magnetoresistive element includes a free magnetic layer, a fixed magnetic layer, and a nonmagnetic spacer layer interposed between the free magnetic layer and the fixed magnetic layer. The magnetic field application unit applies a magnetic field to the free magnetic layer. The DC bias current application unit applies a DC bias current to the magnetoresistive element, and includes an input terminal. The DC bias current is made variable by adjusting a DC voltage that is applied to the DC bias current application unit via the input terminal.

A radio-frequency module includes a multilayer substrate, a first semiconductor device, a second semiconductor device, and a metal layer. The multilayer substrate includes a plurality of stacked layers, and has a first major face and a second major face. The first major face includes a first recess. The first semiconductor device is mounted over a bottom face of the first recess. The second semiconductor device is mounted over the first major face so as to overlie the first recess. The first semiconductor device is connected with a metallic via that extends through a portion of the multilayer substrate from the bottom face of the first recess to the second major face. The metal layer is disposed between the first semiconductor device and the second semiconductor device so as to overlie the first recess.