A 3 MOS camera includes a first prism that causes a first image sensor to receive IR light of light from an observation part, a second prism that causes a second image sensor to receive visible light of A % (A: a predetermined real number) of the light from the observation part, a third prism that causes a third image sensor to receive remaining visible light of (100-A)% of the light from the observation part, and a video signal processor that combines a color video signal based on imaging outputs of the second image sensor and the third image sensor and an IR video signal based on an imaging output of the first image sensor and outputs the combined signal to a monitor, the second image sensor and the third image sensor being respectively bonded to positions optically shifted by substantially one pixel.

A camera apparatus includes a two-dimensional (2D) light source to generate first light for 2D imaging and to irradiate the first light to an object; a three-dimensional (3D) light source to generate second light for 3D imaging and to irradiate the object; a camera sensor to perform a time division mode operation which is time-divided into a first time and a second time, to image the object on which the first light is irradiated to generate a first image signal at the first time, to image the object on which the second light is irradiated to generate a second image signal at the second time; and a controller to control synchronization of the 2D light source and the camera sensor and to control synchronization of the 3D light source and the camera sensor during the time division mode operation.

An imaging device includes at least one unit pixel cell including a photoelectric converter and a voltage application circuit. The photoelectric converter includes a first electrode, a light-transmitting second electrode, a first photoelectric conversion layer containing a first material and a second photoelectric conversion layer containing a second material. The impedance of the first photoelectric conversion layer is larger than the impedance of the second photoelectric conversion layer. The voltage application circuit applies a first voltage or a second voltage having a larger absolute value than the first voltage selectively between the first electrode and the second electrode.

Imaging apparatus (2000, 2100, 2200) includes a photosensitive medium (2004, 2204) and an array of pixel circuits (302), which are arranged in a regular grid on a semiconductor substrate (2002) and define respective pixels (2006, 2106) of the apparatus. Pixel electrodes (2012, 2112, 2212) are connected respectively to the pixel circuits in the array and coupled to read out photocharge from respective areas of the photosensitive medium to the pixel circuits. The pixel electrodes in a peripheral region of the array are spatially offset, relative to the regular grid, in respective directions away from a center of the array.

An imaging device includes a reflection polarization prism having an incident surface on which illumination light emitted from a light emitter is incident and a transmission surface that passes the illumination light entered the incident surface through one surface of a light-transmitting member, an imager including an image sensor having a first light-receiving portion that receives light from a predetermined imaging area transmitting the light-transmitting member and a second light-receiving portion adjacent to the first light-receiving portion that receives the illumination light reflected on an opposite surface to the one surface of the light-transmitting member, and an optical member that emits the light introduced from the predetermined imaging area to the first light-receiving portion and emits the illumination light reflected on the opposite surface of the light-transmitting member to the second light-receiving portion.

An imaging device includes: an imaging sensor; a color filter including first band filters and a second band filter configured to transmit narrowband light having a maximum value of a transmission spectrum outside a range of the wavelength band of the light that passes through each first band filter; a first light source unit; a second light source unit configured to radiate light having an upward projecting distribution of a wavelength spectrum in relation to intensity and having a narrowband light spectrum narrower than the broadband; and a control unit configured to cause the first light source unit and the second light source unit to radiate the beams of light simultaneously, wherein a peak wavelength of the light radiated by the second light source unit is an infrared region or a near-infrared region.

Provided are a dual-spectrum camera system based on a single sensor and an image processing method. The camera system includes a lens, an image sensor, and a logical light separation module and an image fusion module that are sequentially connected to the image sensor. The image sensor includes red-green-blue (RGB) photosensitive cells and infrared radiation (IR) photosensitive cells. An infrared cut-off filter layer is arranged on a light incoming path of the RGB photosensitive cells. The image sensor receives incident light entering through the lens to generate an original image and sends the original image to the logical light separation module. The logical light separation module converts and separates the original image into a visible light image and an infrared image, and sends the visible light image and the infrared image to the image fusion module to generate a fused image.

An image sensor may have an array of pixels that include nested sub-pixels that each have at least one respective photodiode. An inner sub-pixel of a pixel with nested sub-pixels may have a relatively lower effective light collecting area compared to an outer sub-pixel of the pixel within which the inner sub-pixel is nested. A pixel circuit for the nested sub-pixels may include an overflow capacitor and/or a coupled gate circuit used to route charges from the photodiode in the inner sub-pixel. The lower light collecting area of the photodiode in the inner sub-pixel, with optional flicker mitigation charge routing from the coupled gates structure, may reduce the size of the capacitors required to capture photodiode and photodiode overflow charge responses. Flicker mitigation charge routing using a coupled gates structure may allow an adjustable proportion of the overflow charge to be stored in one or more storage capacitors.

An example sensor for phase detection autofocus includes a number of photodiodes to capture light in a number of wavelengths. The example sensor also further includes a color filter array including a grid of alternating color pass filters corresponding to the number of photodiodes. The example sensor further includes a mask including a number of filters to separate a band of light by blocking the band of light on opposing portions of at least two of the alternating color pass filters.

An imaging apparatus according to an aspect of the present disclosure includes an image sensor which, in operation, acquires m kinds (m is an integer which is 1 or larger) of light, the m kinds of light each having wavelength characteristic different from each other and outputs one or more signals each corresponding to each of the m kinds of light, and a signal processing circuit which, in operation, processes the one or more signals to generate and output n, which is larger than m, pieces of images corresponding to respective wavelength regions different from each other.