Provided is a solid-state imaging apparatus, an electronic device, and a driving method for obtaining an output signal irrespective of temperature-induced changes in characteristics. The solid-state imaging apparatus includes a pixel array section including a first pixel that has a first photoelectric converting section and obtains an output signal with logarithmic characteristics, and a second pixel that obtains a temperature detection signal for detecting temperature, the first and the second pixels being arranged in a matrix pattern, and a correcting section that corrects the output signal on the basis of temperature information obtained from the temperature detection signal.

The present disclosure provides a global shutter CMOS pixel circuit and its image capturing method. The global shutter CMOS pixel circuit comprising a power supply unit, a pixel signal generating unit, a signal sampling and holding unit and a signal outputting unit. An output of the pixel signal generating unit is connected to an input of the signal sampling and holding unit. An output of the signal sampling and holding unit is connected to an input of the signal outputting unit. The output signal of the pixel and the photo-generated current are set to a logarithmic relationship, which effectively increases the signal dynamic range. Therefore, image signal transmission with high speed and high dynamic range can be achieved simultaneously. Furthermore, the pixels in the present disclosure can eliminate the process variations, which increases the consistency of the pixels.

An imaging device including a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer; a voltage supply circuit that applies a bias voltage between the first electrode and the second electrode; an amplifier transistor including a gate electrically connected to the second electrode, the amplifier transistor being configured to output a signal that corresponds to a potential of the gate; and a detection circuit that is configured to detect a level of the signal from the amplifier transistor. The voltage supply circuit applies the bias voltage in a first voltage range, in a case where the level detected by the detection circuit is less than a first threshold value, and applies the bias voltage in a second voltage range that is greater than the first voltage range, in a case where the level detected by the detection circuit is greater than a second threshold value.

The present disclosure relates to a solid-state imaging device, an electronic apparatus, and a driving method for reducing power consumption of pixels, and achieving an increase in the number of pixels. Provided is a solid-state imaging device including a pixel array unit that includes pixels arranged in a matrix. From each of the pixels an output signal indicating a logarithmic characteristic is acquired. Each of the pixels includes: a photoelectric conversion unit; a reset transistor that resets the photoelectric conversion unit in accordance with a reset signal; a first amplification transistor that amplifies a signal received from the photoelectric conversion unit; a selection transistor that selects a signal received from the first amplification transistor in accordance with a selection signal; a second amplification transistor that amplifies a signal received from the selection transistor, and applies the amplified signal to a vertical signal line; and a bias transistor that functions as a current source. The first amplification transistor and the second amplification transistor are each connected to a power source voltage. For example, the technology according to the present disclosure is applicable to a logarithmic sensor in a solar cell mode.

To reduce variations in switching timing from linear reading to logarithmic reading and perform reading with high accuracy in a solid state imaging device. A first photoelectric conversion unit converts incident light into charges and accumulates the charges in a first region. A second photoelectric conversion unit converts incident light into charges and accumulates the charges in a second region having a smaller area than the first region. A charge-voltage conversion unit accumulates charges photoelectrically converted by the first and second photoelectric conversion units for converting the charges into a voltage. First and second charge transfer units transfer charges accumulated in the first photoelectric conversion unit and charges accumulated in the second photoelectric conversion unit to the charge-voltage conversion unit, respectively. A charge reset unit resets charges accumulated in the charge-voltage conversion unit. A first discharging unit discharges charges accumulated in the first photoelectric conversion unit.

Some embodiments provide an apparatus and method wherein the non-linearity of the response of a multi-bit QIS is controllable (e.g., selectively variable) by dynamically choosing the bit depth n during A/D conversion, and/or later (i.e., post-conversion) by firmware and/or software.

The invention relates to an imager system comprising a main image sensor (1) and comprising a main matrix (2) of active pixels exhibiting a first instantaneous dynamic span of luminous sensitivity, and a main reading circuit adapted for reading the pixels of the main image sensor (1) and for acquiring a main image on the basis of said reading, an auxiliary image sensor (11) comprising a second matrix (12) of active pixels exhibiting a second instantaneous dynamic span of luminous sensitivity which is more extensive than the first instantaneous dynamic span of luminous sensitivity, and an auxiliary reading circuit adapted for reading the active pixels of the auxiliary image sensor (11) and for acquiring an auxiliary image on the basis of said reading, and a data processing unit (10) configured to determine at least one value of an acquisition parameter of the main image sensor on the basis of the auxiliary image.

The present disclosure relates to a solid-state imaging device, a driving method, and electronic equipment that permit imaging of a wide dynamic range image with higher quality. The solid-state imaging device includes a pixel region and a circuit region. A plurality of pixels that perform photoelectric conversion are arranged in the pixel region. At least a logarithmic conversion circuit is arranged in the circuit region. The logarithmic conversion circuit reads out a pixel signal from the pixel through a logarithmic readout scheme in which the pixel signal changes approximately logarithmically in proportion to the amount of light received by the pixel. Also, the logarithmic conversion circuit can switch between a logarithmic readout scheme and a linear readout scheme when the pixel signal is read out from the pixel. The present technology is applicable, for example, to a CMOS image sensor.

In dynamic vision sensor (DVS) or change detection sensors, the chip or sensor is configured to control or modulate the event rate. For example, this control can be used to keep the event rate close to a desired rate or within desired bounds. Adapting the configuration of the sensor to the scene by changing the ON-event and/or the OFF-event thresholds, allows having necessary amount of data, but not much more than necessary, such that the overall system gets as much information about its state as possible.

A solid-state image pickup device and an electronic apparatus that enable the performance of a logarithmic sensor in a solar-cell mode to improve. After Signal (S) is read, a P-phase signal (N) is read in a conducted state in which RST is ON, and a P-phase signal (N) is read in a non-conducted state in which the RST is OFF. Thus, in a case where sufficient incident light illuminance is provided (Bright), S-N being the difference with respect to the P phase acquired in the conducted state in which the RST is ON, is selected and output. In a case where capacitance is insufficiently charged in a low-illuminance condition in which the incident light is less in amount (Dark), S-N being the difference with respect to the P phase acquired in the conducted state in which the RST is OFF, is selected and output.