The present technology relates to a signal processing apparatus, an imaging apparatus, and a signal processing method capable of reliably imaging a blinking imaging target in a scene having a very large difference in brightness.

By detecting a difference between a plurality of images captured with different exposure times, calculating a combination coefficient indicating a combination ratio between the plurality of images on the basis of the difference, and combining the plurality of images on the basis of the combination coefficient, it is possible to reliably image a blinking imaging target in a scene having a very large difference in brightness. The present technology can be applied to, for example, a camera unit that captures an image.

In a state where an electric charge is held in a first charge holding unit, starting accumulation of an electric charge in a photoelectric conversion unit simultaneously in a plurality of pixel rows, and performing a first transfer operation for transferring an electric charge from the photoelectric conversion unit to the first charge holding unit simultaneously in the plurality of pixel rows.

An integrated image sensor for capturing a mixed structured-light image and regular image using an integrated image sensor are disclosed. The integrated image sensor comprises a pixel array, one or more output circuits, one or more analog-to-digital converters, and one or more timing and control circuits. The timing and control circuits are arranged to perform a set of actions including capturing a regular image and a structured-light image. According to the present invention, the structured-light image captured before or after the regular image is used to derive depth or shape information for the regular image. An endoscope based on the above integrated image sensor is also disclosed. The endoscope may comprises a capsule housing adapted to be swallowed, where the components of integrated image sensor, a structured light source and a non-structured light source are enclosed and sealed in the capsule housing.

A back-illuminated single-photon avalanche diode (SPAD) image sensor includes a sensor wafer stacked vertically over a circuit wafer. The sensor wafer includes one or more SPAD regions, with each SPAD region including an anode gradient layer, a cathode region positioned adjacent to a front surface of the SPAD region, and an anode avalanche layer positioned over the cathode region. Each SPAD region is connected to a voltage supply and an output circuit in the circuit wafer through inter-wafer connectors. Deep trench isolation elements are used to provide electrical and optical isolation between SPAD regions.

An imaging apparatus includes a scanning circuit configured to perform shutter scanning and readout scanning, a first control unit configured to control the capacitance setting unit to set a capacitance value of the input node in the readout scanning, and a second control unit configured to control the capacitance setting unit to set a capacitance value of the input node in the shutter scanning.

A pixel array includes pixel circuits including a first pixel circuit having first and second split floating diffusions receiving charge from first and third photodiodes through first and third transfer transistors, and from second and fourth photodiodes through second and fourth transfer transistors, respectively. A first shared gate structure includes gates of first transfer transistors of first and second pixel circuits. A third shared gate structure includes gates of third transfer transistors of the first and second pixel circuits. A second shared gate structure includes gates of second transfer transistors of first and third pixel circuit. A fourth shared gate structure includes gates of fourth transfer transistors the first and third pixel circuits. A dual floating diffusion transistor is coupled between the first and second split floating diffusions and the third and fourth split floating diffusions to bin charges in the first, second, third, and fourth floating diffusions.

A pixel array includes pixel circuits including a first pixel circuit having first and second split floating diffusions receiving charge from first and third photodiodes through first and third transfer transistors, and from second and fourth photodiodes through second and fourth transfer transistors, respectively. A first shared gate structure includes gates of first transfer transistors of first and second pixel circuits. A third shared gate structure includes gates of third transfer transistors of the first and second pixel circuits. A second shared gate structure includes gates of second transfer transistors of first and third pixel circuit. A fourth shared gate structure includes gates of fourth transfer transistors the first and third pixel circuits. A dual floating diffusion transistor is coupled between the first and second split floating diffusions and the third and fourth split floating diffusions to bin charges in the first, second, third, and fourth floating diffusions.

A time-of-flight distance measuring device divides a base exposure period into a plurality of sub exposure periods and holds without resetting an electric charge stored in the sub exposure period for a one round period which is one round of the plurality of sub exposure periods. The distance measurement value of short time exposure is acquired during the one round period and the distance measurement value of long time exposure is acquired during a plurality of the one round periods. Both of the distance measurement value of the long time exposure and the distance measurement value of the short time exposure can be acquired from the same pixel. With this, a dynamic range is expanded without being restricted by a receiving state of reflected light, optical design of received light, and an arrangement of pixels.

A pixel structure comprises at least one radiation-sensing element, for generating charges when exposed to radiation. The pixel structure includes a first connection arrangement between the at least one radiation-sensing element and a first source follower. The first connection arrangement has a switchable connection to a first reset voltage. At least one second connection arrangement is between the at least one radiation-sensing element and at least one second source follower. The second connection arrangement has a switchable connection to a second reset voltage. The first and at least one second source followers have a common output. The first and second connection arrangements and source followers are configured to provide each a different offset to the common output.

An increase in memory capacity is suppressed in a solid-state imaging element that performs correlated double sampling processing. A pixel circuit sequentially generates each of a predetermined reset level and a plurality of signal levels corresponding to the exposure amount. An analog-to-digital converter converts a predetermined reset level into digital data and outputs the data as reset data, converts each of the plurality of pieces of signal data into digital data, and outputs the data as signal data. An arithmetic circuit holds a difference between the reset data and the signal data output first, as held data in a memory, and then adds the held data and the signal data output second and subsequent times together and causes the memory to hold the added data as new held data.