The present technology relates to a solid-state imaging apparatus and an electronic apparatus that makes it possible to improve coloration and improve image quality. The solid-state imaging apparatus is formed so that, in a pixel array unit in which combinations of a first pixel corresponding to a color component of a plurality of color components and a second pixel having higher sensitivity to incident light as compared with the first pixel are two-dimensionally arrayed, a first electrical barrier formed between a first photoelectric conversion unit and a first unnecessary electric charge drain unit in the first pixel, and a second electrical barrier formed between a second photoelectric conversion unit and a second unnecessary electric charge drain unit in the second pixel have different heights, respectively. The present technology can be applied to, for example, a CMOS image sensor.

The present disclosure relates to a solid-state image capture element, a driving method, and an electronic device which are enabled to capture a high-quality image. In the solid-state image capture element, at least two or more of the discharge driving units are arranged in series between the photoelectric conversion unit and the discharge unit. During capturing of a still image, when a reset operation of the photoelectric conversion unit is performed in starting exposure of the pixel, driving is performed such that after potentials of all the discharge driving units arranged in series are reduced and the charge remaining in the photoelectric conversion unit is discharged to the discharge unit, the potential of the discharge driving unit on the photoelectric conversion unit side is returned to an original potential first, and then the potential of another discharge driving unit is returned to an original potential. The present technology can be applied to a CMOS image sensor which performs imaging by, for example, a global shutter method.

Image sensors and methods of operating the image sensors are provided. The image sensors may include a pixel configured to generate an image signal in response to light incident on the pixel. The pixel may include a charge collection circuit configured to collect charges, which are produced by the light incident on the pixel, during a sensing period and a floating diffusion region. The image sensor may further include a storage unit configured to store the charges and, during a transfer period after the sensing period, configured to transfer at least a portion of the charges to the floating diffusion region. An amount of charges that is transferred from the storage unit to the floating diffusion region may be controlled by a voltage level of a storage control signal that is applied to a storage control terminal of the storage unit.

The present disclosure relates to a solid-state image capture element in which, at least two or more of the discharge driving units are arranged in series between the photoelectric conversion unit and the discharge unit. During capturing of a still image, when a reset operation of the photoelectric conversion unit is performed in starting exposure of the pixel, driving is performed such that after potentials of all the discharge driving units arranged in series are reduced and the charge remaining in the photoelectric conversion unit is discharged to the discharge unit, the potential of the discharge driving unit on the photoelectric conversion unit side is returned to an original potential first, and then the potential of another discharge driving unit is returned to an original potential. The present technology can be applied to a CMOS image sensor which performs imaging by, for example, a global shutter method.

In various embodiments, an image sensor and related methods of operation of the image sensor are disclosed. In an embodiment, an image sensor includes at least one pixel. The at least one pixel including a transistor to couple an overflow capacitor to a floating diffusion node. Under a low light condition, photocharge is to be collected in a floating diffusion, but substantially not into an overflow node. Under a high light condition, photocharge is to overflow into the overflow node. Other sensors and related operations are disclosed.

The present disclosure relates to an imaging device, a driving method, and an electronic apparatus that can capture an image with a higher dynamic range.

The imaging device includes: a pixel region in which pixels are arranged, the pixels each including a photoelectric conversion unit that converts incident light into electric charges through electric conversion and stores the electric charges, and two or more charge storage units that store the electric charges transferred from the photoelectric conversion unit; and a drive unit that drives the pixels. The drive unit drives each pixel to cause the photoelectric conversion unit to repeatedly transfer electric charges with different exposure times to the two or more charge storage units during the light reception period of one frame. The present technology can be applied to an imaging device capable of capturing an HDR image, for example.

A pixel includes: a photoelectric conversion unit; a charge holding unit; a transfer unit which transfers a charge of the photoelectric conversion unit to the charge holding unit in an on-state; and an overflow control unit which discharges a charge of the photoelectric conversion unit in an on-state. There is a period in which both the transfer unit and the overflow control unit are in an off-state and the photoelectric conversion unit and the charge holding unit respectively hold a charge of a different frame. In a first mode, a first potential barrier is formed, the first potential barrier being lower than a potential barrier formed between the photoelectric conversion unit and the charge holding unit by the transfer unit in an off-state. In a second mode, a second potential barrier that is even lower than the first potential barrier is formed.

The present technology relates to a solid-state imaging apparatus and an electronic apparatus that makes it possible to improve coloration and improve image quality.

The solid-state imaging apparatus is formed so that, in a pixel array unit in which combinations of a first pixel corresponding to a color component of a plurality of color components and a second pixel having higher sensitivity to incident light as compared with the first pixel are two-dimensionally arrayed, a first electrical barrier formed between a first photoelectric conversion unit and a first unnecessary electric charge drain unit in the first pixel, and a second electrical barrier formed between a second photoelectric conversion unit and a second unnecessary electric charge drain unit in the second pixel have different heights, respectively. The present technology can be applied to, for example, a CMOS image sensor.

An image sensor including pixels, each pixel including a photodetector and a circuit for reading out the quantity of charges collected by the photodetector at the end of a phase of charge collection by the photodetector. The image sensor further includes, for at least one of the pixels, a detection circuit capable, at least at two different times during the phase, of detecting whether the quantity of charges collected at the time by the photodetector of the pixel exceeds a threshold and, in the case where the quantity of charges collected at the time exceeds the threshold, of storing a first signal representative of the time and of resetting the photodetector.

The present technique relates to a solid-state imaging element and a driving method and electronic equipment that enable sufficient extension of the dynamic range and obtention of an image with higher quality. In a unit pixel, a first photoelectric converter and a second photoelectric converter are provided. Furthermore, a charge accumulating part is connected to the second photoelectric converter with the intermediary of a second transfer gate part and a charge obtained by photoelectric conversion in the second photoelectric converter is transferred to the charge accumulating part via the second transfer gate part. Moreover, an anti-blooming gate part is connected to the second photoelectric converter and the second photoelectric converter can be reset.