The present disclosure relates to a solid-state image pickup device and an electronic apparatus that are capable of preventing leakage of charges between adjacent pixels. A plurality of pixels perform photoelectric conversion on light incident from a back surface via different on-chip lenses for each pixel. A pixel separation wall is formed between pixels adjacent to each other, and includes a front-side trench formed from a front surface and a backside trench formed from the back surface. A wiring layer is provided on the front surface. The present disclosure is applicable to, for example, a backside illuminated CMOS image sensor.

The present disclosure relates to a solid-state image capture element, a driving method, and an electronic device which are enabled to capture a high-quality image.

In the solid-state image capture element, at least two or more of the discharge driving units are arranged in series between the photoelectric conversion unit and the discharge unit. During capturing of a still image, when a reset operation of the photoelectric conversion unit is performed in starting exposure of the pixel, driving is performed such that after potentials of all the discharge driving units arranged in series are reduced and the charge remaining in the photoelectric conversion unit is discharged to the discharge unit, the potential of the discharge driving unit on the photoelectric conversion unit side is returned to an original potential first, and then the potential of another discharge driving unit is returned to an original potential. The present technology can be applied to a CMOS image sensor which performs imaging by, for example, a global shutter method.

A light detecting device includes a photoelectric conversion unit configured to generate a photoelectric charge, a first charge holding unit that includes a first capacitive element and holds the photoelectric charge generated by the photoelectric conversion unit, a second charge holding unit configured to hold the photoelectric charge transferred from the first charge holding unit, a first transistor arranged on a wiring connecting the first charge holding unit and the second charge holding unit to transfer the photoelectric charge held in the first charge holding unit to the second charge holding unit, and a second transistor configured to cause a pixel signal of a voltage value corresponding to a charge amount of the photoelectric charge held in the second charge holding unit to appear on a signal line.

A single pixel sensor is provided, comprising a photo sensor configured to convert light into proportional signals; a charge storage configured to accumulate, repeatedly, a plurality of the signals converted by the photosensor; a first transistor coupled between a pixel voltage terminal and the photosensor; a second transistor coupled between the photosensor and the charge storage; and a readout circuit coupled between the charge storage and an output channel, wherein: the single pixel sensor is configured to carry out the repeated accumulations of signals multiple times per each readout by the readout circuit to synchronously convert reflections of light emitted by the illuminator, and to carry out at least one of the repeated accumulations of signals in at least partial overlap with at least one light pulse generated by the pulsed illuminator.

An image sensor is provided. In one aspect, the image sensor includes a pixel coupled to an output line. The pixel includes a photodiode configured to generate electrical charges in response to light and a supply circuit configured to supply a voltage to the photodiode to keep a voltage of the photodiode at or above a threshold level in an integration time. In another aspect, the pixel includes a supply circuit configured to selectively supply voltage to the photodiode in a first charge holding capacity and a second charge holding capacity.

A pixel circuit is provided. The pixel circuit includes a photoelectric converter unit, an amplifier unit, a reset unit, a compensation unit, a charging unit, and a readout unit, wherein the photoelectric converter unit is connected to a first voltage terminal and the amplifier unit, and is configured to convert an optical signal into an electric signal, wherein the amplifier unit is connected to the photoelectric converter unit, the charging unit, and the readout unit, and is configured to amplify an output signal from the photoelectric converter unit, and wherein the reset unit is connected to a reset terminal, the first voltage terminal, and the amplifier unit, and is configured to reset the amplifier unit based on an input signal from the reset terminal and an input signal from the first voltage terminal.

In a period in which a pixel signal of another pixel is read out from the pixel, a transistor connected to a floating diffusion region of a pixel not performing reading out of a pixel signal from the pixel is turned off.

An image sensor is provided. In one aspect, the image sensor includes a pixel coupled to an output line. The pixel includes a photodiode configured to generate electrical charges in response to light and a supply circuit configured to supply a voltage to the photodiode to keep a voltage of the photodiode at or above a threshold level in an integration time. In another aspect, the pixel includes a supply circuit configured to selectively supply voltage to the photodiode in a first charge holding capacity and a second charge holding capacity.

A pixel circuit is provided. The pixel circuit includes a photoelectric converter unit, an amplifier unit, a reset unit, a compensation unit, a charging unit, and a readout unit, wherein the photoelectric converter unit is connected to a first voltage terminal and the amplifier unit, and is configured to convert an optical signal into an electric signal, wherein the amplifier unit is connected to the photoelectric converter unit, the charging unit, and the readout unit, and is configured to amplify an output signal from the photoelectric converter unit, and wherein the reset unit is connected to a reset terminal, the first voltage terminal, and the amplifier unit, and is configured to reset the amplifier unit based on an input signal from the reset terminal and an input signal from the first voltage terminal.

The present technology relates to a solid-state imaging apparatus, a manufacturing method therefor, and an electronic apparatus by which fine pixel signals can be suitably generated.

A charge accumulation section that is formed on a first semiconductor substrate and accumulates photoelectrically converted charges, a charge-retaining section that is formed on a second semiconductor substrate and retains charges accumulated in the charge accumulation section, and a transfer transistor that is formed on the first semiconductor substrate and the second semiconductor substrate and transfers charges accumulated in the charge accumulation section to the charge-retaining section are provided. A bonding interface between the first semiconductor substrate and the second semiconductor substrate is formed in a channel of the transfer transistor.