A photoelectric conversion apparatus includes a second substrate including a signal processing circuit configured to perform signal processing using machine learning on a signal output from the first substrate. The second substrate is disposed on the first substrate in a multilayer structure. The signal processing circuit is so disposed to overlap with a pixel array but not overlap with a light-shielded pixel area as seen in a plan view.

A photoelectric conversion apparatus includes a second substrate including a signal processing circuit configured to perform signal processing using machine learning on a signal output from the first substrate. The second substrate is disposed on the first substrate in a multilayer structure. The signal processing circuit is so disposed to overlap with a pixel array but not overlap with a light-shielded pixel area as seen in a plan view.

The present invention relates to a method for correcting a packaged optical sensor array module, and the method for correcting a packaged optical sensor array module according to the present invention comprises the steps of: analyzing statistical characteristics of an optical sensor array with respect to light emitted from a standard light source having a predetermined characteristic value to extract a representative value, and calculating a first correction value for a measurement value according to the extracted representative value; and calculating a second correction value for a measured value of the optical sensor array that is corrected by the first correction value with respect to light emitted from an applied light source or light emitted by a fluorescence of the applied light source.

Imagers and associated devices and systems are disclosed herein. In one embodiment, an imager includes a pixel array and control circuitry operably coupled to the pixel array. The pixel array includes an imaging pixel configured to produce a reset signal and a non-imaging pixel configured to produce a nominal reset signal. The control circuitry is configured to produce an output signal based at least in part on one of (a) the nominal reset signal when distortion at the imaging pixel exceeds a threshold and (b) the reset signal when distortion does not exceed the threshold.

Imagers and associated devices and systems are disclosed herein. In one embodiment, an imager includes a pixel array and control circuitry operably coupled to the pixel array. The pixel array includes an imaging pixel configured to produce a reset signal and a non-imaging pixel configured to produce a nominal reset signal. The control circuitry is configured to produce an output signal based at least in part on one of (a) the nominal reset signal when distortion at the imaging pixel exceeds a threshold and (b) the reset signal when distortion does not exceed the threshold.

A radiographic imaging apparatus includes: an effective pixel area including a plurality of detection areas, in each of which a first pixel including a photoelectric conversion element and a second pixel including a light-blocking element are provided; a plurality of signal processing units that are provided so as to correspond to the plurality of detection areas and each process, for a corresponding one of the detection areas, an output signal from the first pixel and an output signal from the second pixel provided in the corresponding one of the detection areas; and a correction unit that makes, for each signal processing unit among the plurality of signal processing units, a correction to the output signal from the first pixel processed by the signal processing unit, by using the output signal from the second pixel processed by the signal processing unit.

An image sensor includes first and second column lines, and a read circuit configured to receive pixel signals through the first and second column lines. The first column line and the second column line each include a main wire, a first wire between one end of the main wire and the first interlayer connection region, and a second wire connected with an opposite end of the main wire. A first distance between the first and second column lines is longer than a second distance between a connection point of the first column line and the first interlayer connection region and a connection point of the second column line and the first interlayer connection region. A length of the first wire of the first column line is greater than a length of the first wire of the second column line.

A method includes obtaining multiple spatially-displaced input images of a scene based on image data captured using multiple imaging sensors. The method also includes dividing each of the input images into multiple overlapping sub-images. The method further includes generating multiple overlapping sub-image gain maps based on the sub-images. In addition, the method includes combining the sub-image gain maps to produce a final gain map identifying relative gains of the imaging sensors. An adjacent and overlapping pair of sub-image gain maps are combined by renormalizing gain values in at least one of the pair of sub-image gain maps so that average gain values in overlapping regions of the pair of sub-image gain maps are equal or substantially equal.

A photoelectric conversion apparatus includes a second substrate including a signal processing circuit configured to perform signal processing using machine learning on a signal output from the first substrate. The second substrate is disposed on the first substrate in a multilayer structure. The signal processing circuit is so disposed to overlap with a pixel array but not overlap with a light-shielded pixel area as seen in a plan view.

An image sensor includes first and second column lines, and a read circuit configured to receive pixel signals through the first and second column lines. The first column line and the second column line each include a main wire, a first wire between one end of the main wire and the first interlayer connection region, and a second wire connected with an opposite end of the main wire. A first distance between the first and second column lines is longer than a second distance between a connection point of the first column line and the first interlayer connection region and a connection point of the second column line and the first interlayer connection region. A length of the first wire of the first column line is greater than a length of the first wire of the second column line.