An imaging device including: a first imaging cell including a first photoelectric converter that generates a first signal; and a second imaging cell including: a second photoelectric converter that generates a second signal; and a capacitor having a first and second terminal, the first terminal electrically coupled to second photoelectric converter. An area of the first photoelectric converter is greater than an area of the second photoelectric converter in a plan view, the first imaging cell has a first number of saturation charges, and the second imaging cell has a second number of saturation charges, the first number of saturation charges is greater than the second number of saturation charges, and the capacitor has capacitance that causes the second number of saturation charges of the second imaging cell to become greater than the first number of saturation charges of the first imaging cell.

The present disclosure relates to a solid-state imaging device and an electronic device that can be provided with phase difference pixels with a lower degree of difficulty in manufacturing.

Provided is a solid-state imaging device including a pixel array unit in which a plurality of pixels is two-dimensionally arrayed, in which the pixel array unit has an array pattern in which a plurality of pixel groups each including neighboring pixels of an identical color is regularly arrayed, and among the plurality of pixel groups arrayed in the array pattern, pixels configuring a light-shielded pixel group are shielded in an identical direction side from light, the light-shielded pixel group being a pixel group including pixels each being shielded in a part of a light incident side from the light. The present technology can be applied to, for example, a CMOS image sensor including pixels for phase difference detection.

An image sensor is provided. The image sensor includes: a pixel array including a plurality of pixels arranged along rows and columns; and a row driver which drives the plurality of pixels for each of the rows, wherein each of the plurality of pixels includes a plurality of sub-pixels, each of the plurality of sub-pixels includes a plurality of photoelectric conversion elements sharing a floating diffusion area with each other, and a micro lens disposed to overlap the plurality of photoelectric conversion elements, a readout area is defined on the pixel array in accordance with a preset readout mode, and the row driver generates a drive signal for reading out signals provided from a photoelectric conversion element included in the readout area from among the plurality of photoelectric conversion elements, and provides the drive signal to the pixel array.

A solid-state imaging device includes a photoelectric converter, a transfer gate transistor, and an overflow gate transistor. The photoelectric converter is provided in a semiconductor substrate and generates photocharge. The transfer gate transistor is provided at a surface of the semiconductor substrate as a vertical transistor and reads the photocharge stored in the photoelectric converter. The overflow gate transistor is provided at the surface of the semiconductor substrate as a planar transistor and transfers the photocharge overflowing from the photoelectric converter.

A solid-state imaging device includes a photoelectric converter, a transfer gate transistor, and an overflow gate transistor. The photoelectric converter is provided in a semiconductor substrate and generates photocharge. The transfer gate transistor is provided at a surface of the semiconductor substrate as a vertical transistor and reads the photocharge stored in the photoelectric converter. The overflow gate transistor is provided at the surface of the semiconductor substrate as a planar transistor and transfers the photocharge overflowing from the photoelectric converter.

A photoelectric conversion device of the present disclosure includes: a scanning unit; a first storage unit that stores a first setting value representing a setting of a first scan in response to an input from the outside; and a second storage unit that stores a second setting value representing a setting of a second scan in response to an input from the outside, wherein the scanning unit performs the first scan based on the first setting value and the second scan based on the second setting value in one frame period, and wherein both storing of the first setting value in the first storage unit and storing of the second setting value by the second storage unit are performed prior to a start of the first scan and a start of the second scan.

An image capturing apparatus includes a plurality of pixels, a signal line connected to the plurality of pixels, and a limiter circuit configured to limit an amplitude of the signal at the signal line. A first pixel in the plurality of pixels sequentially outputs a noise signal, a focus detection signal, and an image capturing signal to the signal line. A second pixel in the plurality of pixels sequentially outputs a noise signal and an image capturing signal to the signal line, and wherein a potential of the signal at the signal line is set to a potential by the limiter circuit during a period after the second pixel outputs the noise signal and before the second pixel outputs the image capturing signal.

The present disclosure relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic device capable of improving auto-focusing accuracy by using a phase difference signal obtained by using a photoelectric conversion film. The solid-state imaging device includes a pixel including a photoelectric conversion portion having a structure where a photoelectric conversion film is interposed by an upper electrode on the photoelectric conversion film and a lower electrode under the photoelectric conversion film. The upper electrode is divided into a first upper electrode and a second upper electrode. The present disclosure can be applied to, for example, a solid-state imaging device or the like.

The present disclosure relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic device capable of improving auto-focusing accuracy by using a phase difference signal obtained by using a photoelectric conversion film. The solid-state imaging device includes a pixel including a photoelectric conversion portion having a structure where a photoelectric conversion film is interposed by an upper electrode on the photoelectric conversion film and a lower electrode under the photoelectric conversion film. The upper electrode is divided into a first upper electrode and a second upper electrode. The present disclosure can be applied to, for example, a solid-state imaging device or the like.

A solid-state imaging element of a pixel sharing type with improved driving of transistors is disclosed. A first electric charge accumulating section and a second electric charge accumulating section are arranged in a predetermined direction. A first transfer section transfers electric charge from first photoelectric conversion elements to the first electric charge accumulating section, causing it to accumulate the electric charge. A second transfer section transfers electric charge from second photoelectric conversion elements to the second electric charge accumulating section, causing it to accumulate the electric charge. A first transistor is configured to output a signal corresponding to an amount of the electric charge accumulated in each of the first electric charge accumulating section and the second electric charge accumulating section. A second transistor is arranged with the first transistor in the predetermined direction and connected in parallel to the first transistor.