An image sensor for detecting time-dependent image data, comprising multiple photovoltaic converters and multiple electronic converters arranged in arrays and linked by switching elements. Each of the photovoltaic converters and one of the electronic converters form a pair that generates digital information dependent on light intensity on the photovoltaic converter. The switching elements are arranged to selectively connect at least two of the photovoltaic converters to one of the electronic converters and at least two of the electronic converters to one of the photovoltaic converters.

Pixel sensitivity is improved in a solid-state imaging element that performs time delay integration.

The solid-state imaging element includes a plurality of photoelectric conversion elements and a given number of transistors. In the solid-state imaging element, the plurality of photoelectric conversion elements is arranged along a given direction with a given spacing. A size, in the given direction, of each of the plurality of photoelectric conversion elements that are arranged with the given spacing does not exceed the given spacing. Also, in the solid-state imaging element, the given number of transistors are arranged between the plurality of photoelectric conversion elements, and the transistors generate a signal commensurate with as amount of charge generated by any of the plurality of photoelectric conversion elements.

Technologies relating to CMOS image sensors with integrated Resistive Random-Access Memory (RRAMs) units that provide energy efficient analog storage, ultra-high speed analog storage, and in-memory computing functions are disclosed. An example CMOS image sensor with integrated RRAM crossbar array circuit includes a CMOS image sensor having multiple pixels configured to receive image signals; a column decoder configured to select the pixels in columns to read out; a row decoder configured to select the pixels in rows to read out; an amplifier configured to amplify first signals received from the CMOS image sensor; a multiplexer configured to sequentially or serially read out second signals received from the amplifier; and a first RRAM crossbar array circuit configured to store third signals received from the multiplexer.

A unit pixel circuit includes a first photodiode, a second photodiode different from the first photodiode, a first floating diffusion node in which charges generated in the first photodiode are accumulated, a second floating diffusion node in which charges generated in the second photodiode are accumulated, a capacitor connected to the first floating diffusion node and a first voltage node, and accumulating overflowed charges of the first photodiode, a first switch transistor connecting the first floating diffusion node to a third floating diffusion node, a reset transistor connecting the third floating diffusion node to a second voltage node, a gain control transistor connecting the second floating diffusion node to the third floating diffusion node, and a second switch transistor connected to the first voltage node and the second voltage node.

Provided are a solid-state imaging device, a method for driving a solid-state imaging device, and an electronic apparatus capable of reading signals produced with different conversion gains and having different signal directions.

A pixel signal processing part 400 includes a first reading part 410 and a second reading part 420. Of a pixel signal PIXOUT input into an input node ND401, the first reading part 410 inverts the signal direction of a first-conversion-gain signal (HCGRST, HCGSIG) and outputs an inverted first-conversion-gain signal (HCGRST, HCGSIG), which has been subjected to inversion and amplification, to an AD converting part 430 via a connection node ND402. Of the pixel signal PIXOUT input into the input node ND401, the second reading part 420 keeps the signal direction of a second-conversion-gain signal (LCGSIG, LCGRST) unchanged, and outputs a non-inverted second-conversion-gain signal (LCGSIG, LCGRST) to the AD converting part 430 via the connection node ND402.

A light receiving element array includes one or more unit element blocks. Each of the unit element blocks includes different light receiving elements with different element structures.

Power consumption in realizing a convolutional neural network (CNN) is reduced.

A solid-state imaging element according to the present technology includes a photoelectric conversion element that photoelectrically converts received light into signal charge corresponding to the amount of received light, a floating diffusion that holds the signal charge obtained by the photoelectric conversion element, a transfer control element that controls transfer of the signal charge from the photoelectric conversion element to the floating diffusion, and a control unit that controls application of a drive voltage to the transfer control element on the basis of a convolution coefficient in a CNN.

A semiconductor apparatus includes a stack of first and second chips each having a plurality of pixel circuits arranged in a matrix form. The pixel circuit of the a-th row and the e1-th column is connected to the electric circuit of the p-th row and the v-th column. The pixel circuit of the a-th row and the f1-th column is connected to the electric circuit of the q-th row and the v-th column. The pixel circuit of the a-th row and the g1-th column is connected to the electric circuit of the r-th row and the v-th column. The pixel circuit of the a-th row and the h1-th column is connected to the electric circuit of the s-th row and the v-th column.

An imaging device includes a plurality of photodiodes arranged in a photodiode array to generate charge in response to incident light. The plurality of photodiodes includes first and second photodiodes. A shared floating diffusion receives charge transferred from the first and second photodiodes. An analog to digital converter (ADC) performs a first ADC conversion to generate a reference readout in response to charge in the shared floating diffusion after a reset operation. The ADC is next performs a second ADC conversion to generate a first half of a phase detection autofocus (PDAF) readout in response to charge transferred from the first photodiode to the shared floating diffusion. The ADC then performs a third ADC conversion to generate a full image readout in response to charge transferred from the second photodiode combined with the charge transferred previously from the first photodiode in the shared floating diffusion.

Color mixing between pixels is prevented in a solid-state imaging element in which a pair of pixels for detecting the phase difference of a pair of light rays are arranged. A pair of photoelectric conversion elements receive a pair of light rays made by pupil-splitting. A floating diffusion layer generates a pair of pixel signals from electric charge transferred from each of the pair of photoelectric conversion elements. A pair of transfer transistors transfer the electric charge from the pair of photoelectric conversion elements to the floating diffusion layer. In a case of detecting the phase difference of the pair of light rays from the pair of pixel signals, the control unit takes control so that back gate voltages that include the back gate potentials of both of the pair of transfer transistors with respect to the potential barrier between the pair of photoelectric conversion elements have values different from values in a case of synthesizing the pair of pixel signals.