An imaging device includes a plurality of pixels that receives incident light entering from an object after passing through neither an imaging lens nor a pinhole, and each outputs a detection signal indicating an output pixel value modulated in accordance with an incident angle of the incident light. The imaging device is attached to a vehicle so that a light receiving surface faces a side of the vehicle, and the average of the centroids of incident angle directivities indicating directivities of the plurality of pixels with respect to the incident angle of the incident light deviates in one direction from the center of the pixel. The present technology can be applied to an electronic sideview mirror, for example.

An image sensor including: a pixel array including first and second pixel groups, each of the first and second pixel groups includes of pixels arranged in rows and columns; and a row driver configured to provide transmission control signals to the pixel array, the first pixel group includes a first auto-focus (AF) pixel including photodiodes arranged in a first direction, the pixels of the first pixel group output a pixel signal through a first column line, and the second pixel group includes a second AF pixel including photodiodes arranged in a second direction perpendicular to the first direction, the pixels of the second pixel group output a pixel signal through a second column line, and the first AF pixel of the first pixel group and the second AF pixel of the second pixel group receive same transmission control signals.

Provided is a solid-state imaging element configured to automatically extend dynamic range for each unit pixel. A solid-state imaging element includes, for a unit pixel, a first photoelectric conversion element, a first accumulation portion that accumulates electric charge obtained by photoelectric conversion by the first photoelectric conversion element, and a first film that is electrically connected to the first accumulation portion and has an optical characteristic changing according to applied voltage. Furthermore, the unit pixel of the solid-state imaging element can further include a first transfer transistor that transfers electric charge obtained by photoelectric conversion by the photoelectric conversion element to the first accumulation portion, an amplification transistor that is electrically connected to the first accumulation portion, and a selection transistor that is electrically connected to the amplification transistor.

An image sensing device includes a pixel array including a plurality of unit pixel blocks each including a plurality of unit image sensing pixels arranged in the pixel array and structured to convert light into photocharges. Each of the unit pixel blocks includes a first sub-pixel block including a first floating diffusion region structured to hold the photocharges and a plurality of unit image sensing pixels sharing the first floating diffusion region, and a conversion gain capacitor arranged adjacent to one side of the first sub-pixel block. The conversion gain capacitor includes an impurity region coupled to an input node that receives a conversion gain signal, and a gate structured to surround the impurity region and coupled to the first floating diffusion region to change a gain of the first floating diffusion region in response to a change in the conversion gain signal.

PLS resistance is improved in a solid-state imaging element in which all pixels are simultaneously exposed. A front-stage transfer transistor transfers a charge from a photoelectric conversion element to a front-stage charge holding region and a rear-stage charge holding region which have different capacities. A rear-stage transfer transistor transfers the charge from the rear-stage charge holding region to a floating diffusion region. An intermediate transfer transistor transfers a charge, which remains in the front-stage charge holding region after the charge has been transferred from the rear-stage charge holding region to the floating diffusion region, to the floating diffusion region via the front-stage charge holding region.

An imaging device according to an embodiment of the present disclosure includes: a first substrate; a second substrate; and a through wiring line. The first substrate includes a photoelectric conversion section and a first transistor in a first semiconductor substrate. The photoelectric conversion section and the first transistor are included in a sensor pixel. The second substrate is stacked on the first substrate and includes a second transistor and an opening that extends through a second semiconductor substrate. The second substrate has an adjuster on at least one of a side surface of the opening near a gate of the second transistor or a region of a surface opposed to the first transistor. The second transistor is included in the sensor pixel. The adjuster adjusts a threshold voltage of the second transistor. The through wiring line is in the opening and electrically couples the first substrate and the second substrate.

A solid-state imaging apparatus includes a pixel circuit and a negative feedback circuit. The pixel circuit includes: a photodiode; a charge storage that holds a signal charge generated by the photodiode; an amplification transistor that outputs a pixel signal corresponding to the signal charge in the charge storage; a first reset transistor that resets the charge storage; a first storage capacitive element for holding a signal charge; and a first transistor that controls the connection between the charge storage and the first storage capacitive element. The negative feedback circuit negatively feeds back a feedback signal corresponding to a reset output of the amplification transistor to the charge storage via the first reset transistor.

An image sensing device includes a pixel array configured to include a first pixel belonging to a first row and a first column, and a second pixel belonging to a second row adjacent to the first row and a second column adjacent to the first column; and a dual conversion gain (DCG) capacitor coupled between the first pixel and the second pixel, and a first DCG transistor for selectively connecting the DCG capacitor to or disconnecting the DCG capacitor from a first floating diffusion region of the first pixel; and the second pixel includes a second floating diffusion region and a second DCG transistor for selectively connecting the DCG capacitor to or disconnecting the DCG capacitor from a second floating diffusion region of the second pixel.

An image pickup device according to an embodiment includes pixels each configured to output an analog signal based on electric charges produced in a photoelectric conversion unit and a control unit configured to control a gain applied to the analog signal to be at least a first gain and a second gain greater than the first gain in accordance with a signal value of the analog signal. Each of the pixels outputs, as the analog signal, a first signal and a second signal based on electric charges produced in the photoelectric conversion unit in a first exposure period and a second exposure period shorter than the first exposure period. The control unit controls the gain applied to the analog signal by selecting one from the first gain and the second gain in accordance with the signal value, for at least one of the first signal and the second signal.

Provided is a solid-state image pickup element that amplifies the difference between respective signals of a pair of pixels and enables a reduction in the number of wiring lines. The solid-state image pickup element includes an electric-charge accumulation unit, a reference reset transistor, and a readout reset transistor. The electric-charge accumulation unit accumulates electric charge transferred from a photoelectric conversion unit and generates signal voltage corresponding to the amount of the electric charge. The reference reset transistor supplies predetermined reset voltage to the electric-charge accumulation unit in a case of generating predetermined reference voltage. The readout reset transistor supplies voltage different from the reset voltage to the electric-charge accumulation unit in a case of reading out the signal voltage.