A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.

An imaging device may have an array of image sensor pixels. The array of image sensor pixels may have main pixels and reference pixels that are overlapped by optical stacks. The reference pixels may be more resistant to weathering, such as solar degradation, than the main pixels. For example, optical stacks overlapping the main pixels may include antireflection coatings, while optical stacks overlapping the reference pixels may not include antireflection coatings. Alternatively or additionally, the optical stacks overlapping the main pixels may include color filter resist formed from a first pigment, and the optical stacks overlapping the reference pixels may include color filter resist formed from a second pigment that is more resistant to weathering than the first pigment. Processing circuitry may compare outputs of the main pixels and the reference pixels to determine whether pixels in the array have been damaged.

There is provided an imaging device including a pixel array section including pixel units two-dimensionally arranged in a matrix pattern, each pixel unit including a photoelectric converter, and a plurality of column signal lines disposed according to a first column of the pixel units. The imaging device further includes an analog to digital converter that is shared by the plurality of column signal lines.

An image acquisition apparatus includes a color filter on which a plurality of types of color filter elements are arranged, an optical path modulation optical element configured to shift an incident position of an image on the color filter by electrically modulating an optical path of the image, and a photoelectric conversion cell array configured to acquire image information for each color by detecting, in pixel units, light which has passed through the color filter. A color image is obtained by acquiring, in a time division manner, the image information for each color of the image of which a position is changed by the optical path modulation optical element by using a detection signal of the photoelectric conversion cell array, and combining the acquired image information for each color.

A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.

A light control device 10 includes a pair of electrodes 611 and 612 and a stacked structure body 613 of a plurality of light control layers 613 sandwiched by the pair of electrodes 611 and 612; and each light control layer 613 has a stacked structure of a first insulating layer 614, a first nanocarbon film 615 doped with an n-type impurity or not doped with an impurity, a second insulating layer 617, and a second nanocarbon film 616 doped with a p-type impurity or not doped with an impurity.

A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.

An imaging system has an imager comprising a plurality of jots. A readout circuit is in electrical communication with the imager. The readout circuit can be configured to facilitate the formation of an image by defining neighborhoods of the jots, wherein a local density of exposed jots within a neighborhood is used to generate a digital value for a pixel of the image.

There is provided an imaging device including a pixel array section including pixel units two-dimensionally arranged in a matrix pattern, each pixel unit including a photoelectric converter, and a plurality of column signal lines disposed according to a first column of the pixel units. The imaging device further includes an analog to digital converter that is shared by the plurality of column signal lines.

Disclosed herein is a camera system including, a camera apparatus having, an image sensor, a correction section, a first transmission processing section, and a synchronization processing section, and a video processing apparatus having a second transmission processing section and a conversion section, wherein the video processing apparatus outputs the video data obtained by the conversion by the conversion section.