A method of detecting a failure of an antiparallel thyristor, wherein the antiparallel thyristor includes a first thyristor and a second thyristor connected in parallel and in opposite directions, and is configured to control power supplied from an alternating current power supply to a load, the method including: detecting, as a first detection value, a voltage or a current supplied to the load when ceasing an output command for the second thyristor and issuing an output command for the first thyristor; detecting, as a second detection value, the voltage or the current supplied to the load when ceasing the output command for the first thyristor and issuing the output command for the second thyristor; and determining the failure of the antiparallel thyristor based on a difference between the first detection value and the second detection value.

The inventive concept provides a support unit for supporting a substrate. The support unit includes a heating unit for heating the substrate, and wherein the heating unit includes: a plurality of heating members; and a plurality of first power lines and a plurality of second power lines providing a supply and return pathway for a power to and from the plurality of heating members, and wherein the plurality of second power lines are connected to each of the plurality of first power lines through the plurality of heating members, and at least two heating members are connected to each first power line and at least two heating members are connected to each second power line, and at least two heating members are connected in parallel between each first power line and each second power line.

There is provided a substrate processing apparatus, including: a substrate holding/rotating part configured to hold a substrate on a mounting table and rotate the substrate; a laser irradiation head configured to irradiate a laser beam toward a lower surface of the mounting table; and a controller configured to control at least the rotation of the substrate holding/rotating part and the irradiation of the laser beam. The laser irradiation head is fixed below the mounting table so as to be spaced apart from the mounting table. The controller controls the laser irradiation head to irradiate the laser beam when the mounting table is rotated by the substrate holding/rotating part.

A heater component has a substrate part and a thin coating heater which is equipped outside this substrate part and generates heat by power supply. The thin coating heater is formed of a thermal sprayed coating. The thin coating heater has a heater body and a heater extension part. The heater body is arranged on a first end face of the substrate part. The heater extension part is extended from the heater body to a second end face of the substrate part through a side surface of the substrate part. A tip part of the heater extension part is a heater power supplying part for supplying electric power to the heater body.

A heater substrate has an insulating substrate having a first surface and a second surface on the opposite side relative to the first surface and at least one heating element of spiral shape including plural heater wire pieces and positioned in or on the insulating substrate. The heating element of spiral shape has at least one adjustment section including a turn of all or some of the plural heater wire pieces. The plural heater wire pieces include a first heater wire piece and a second heater wire piece adjacent to the inner side of the first heater wire piece. In the adjustment section, the length of the first heater wire piece is smaller than the length of the second heater wire piece.

Provided is a supporting unit supporting a substrate. The supporting unit may include: a plate; heating elements provided to the plate and controlling a temperature of a substrate, wherein the heating elements are arranged to control temperatures of different areas of the substrate; and a power supply module supplying power to the heating element, and the power supply module may be configured to continuously supply the power to at least two heating elements of the heating elements.

A substrate processing apparatus includes plural heating modules each including a table on which a substrate is placed to be heated, the substrate having plural heated zones. The table has plural heaters each assigned to heat respective ones of the heated zones. Heat generation of the heaters is controlled independently. A control unit controls the heaters such that integrated quantities of heat of the respective heated zones given by the corresponding heaters from first to second time point are substantially identical to each other in each of the heating modules, and are substantially identical to each other among the heating modules. The first time point is set when a temperature transition profile of the substrate is rising toward a process temperature after placing the substrate on the table under a condition where heat generation of the heaters is stable. The second time point is set after the temperature transition profile reaches the process temperature.

A substrate support unit includes: a ceramic body having a surface for supporting a substrate, the ceramic body including aluminum nitride (AlN), a heat generating resistor disposed in the ceramic body, and including molybdenum (Mo), and a coating layer surrounding the heat generating resistor, and including molybdenum aluminum nitride (MoAlN).

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space; and a support unit configured to support and heat a substrate in the treating space, and wherein the support unit includes: at least one heating element for adjusting a temperature of the substrate; a power source for generating a power applied to at least one heating element; a power supply line for transmitting the power generated by the power source to the at least one heating element; a power return line for grounding the at least one heating element; and a current measuring resistor provided on the power supply line or the power return line and used for estimating a temperature of the at least one heating element.

A wafer placement table includes: a ceramic member having a wafer placement surface; a mesh electrode buried in the ceramic member; a conductive connection member in contact with the mesh electrode and exposed to outside from a surface of the ceramic member on the opposite side of the wafer placement surface; and an external current-carrying member joined to a surface of the connection member exposed to outside. The mesh electrode has a mesh opening in a region that faces the connection member, and the mesh opening is filled with a sintered conductor being a sintered body of a mixture containing a conductive powder and a ceramic raw material.