A heat treatment apparatus of heating a substrate mounted on a mounting plate heated by a heating part includes: plural types of physical quantity detecting parts for detecting plural types of physical quantities, respectively; a state estimating part for estimating an occurrence probability occurring for each of abnormality modes by a neural network, and including an input layer to which a group of time-series detection values obtained for each of physical quantity detection values detected respectively by the physical quantity detecting parts is inputted; and a selecting part for selecting one of correspondence processes based on the occurrence probability of each of the abnormality modes estimated by the state estimating part. One of the physical quantity detection values is a temperature detection value detected by a temperature physical quantity detecting part for detecting a temperature of the mounting plate among the physical quantity detecting parts.

Systems and methods for identifying a single failure in a heater array and compensating for the failure are described. The methods include identifying two X buses and two Y buses of the heater array having a location of the failure. A confirmation of the single failure within the heater array is performed after identifying the two X and two Y buses. Once the single failure is confirmed, the location of the failure is identified. The methods include compensating for the single failure by adjusting a duty cycle of a heater at the location of the failure, adjusting additional duty cycles of heaters along the same X bus as the failed heater and the same Y bus as the failed heater, and maintaining remaining duty cycles of power provided to remaining heaters of the heater array.

A temperature control unit has a temperature control unit body, a temperature control part provided inside the temperature control unit body, which raises and lowers a surface temperature of the temperature control unit body on a side where a temperature control object is located, and a thin coating temperature measuring resistance part composed of a thermal sprayed coating. The thin coating temperature measuring resistance part is formed over a certain range in a surface on the side where the temperature control object is located, and which is provided inside the temperature control unit body on a side closer to the temperature control object than the temperature control part. The thin coating temperature measuring resistance part can accurately measure an average temperature of a temperature control surface.

A processing apparatus for a thermal treatment of a workpiece is presented. The processing apparatus includes a processing chamber, a workpiece support disposed within the processing chamber, a gas delivery system configured to flow one or more process gases into the processing chamber from the a first side of the processing chamber, one or more radiative heating sources disposed on the second side of the processing chamber, one or more dielectric windows disposed between the workpiece support and the one or more radiative heating sources, a rotation system configured to rotate the one or more radiative heating sources, and a workpiece temperature measurement system configured at a temperature measurement wavelength range to obtain a measurement indicative of a temperature of a back side of the workpiece.

Methods and apparatus for processing a substrate are provided herein. The apparatus can include, for example, a microwave energy source configured to provide microwave energy from beneath a substrate support provided in an inner volume of the process chamber; a first microwave reflector positioned on the substrate support above a substrate supporting position of the substrate support; and a second microwave reflector positioned on the substrate support beneath the substrate supporting position, wherein the first microwave reflector and the second microwave reflector are positioned and configured such that microwave energy passes through the second microwave reflector and some of the microwave energy is reflected from a bottom surface of the first microwave reflector back to the substrate during operation.

A base structure includes a base, a first conductor layer, and a via conductor. The base has a first surface. The first conductor layer is positioned along the first surface in the base. The via conductor includes a first part and a second part in a section that includes the via conductor and that extends in a first direction perpendicular to the first surface. The length of the first part in the first direction is larger than the thickness of the first conductor layer. The length of the second part in the first direction is larger than the thickness of the first conductor layer. The second part is continuous with the first part, and at least a portion of the outer edge of the second part is displaced from the outer edge of the first part when viewed in the first direction.

A temperature adjustment apparatus configured to perform temperature adjustment and control for each fine zone of a substrate, a multi-zone temperature adjustment apparatus including the same, and a multi-zone temperature adjustment type substrate supporting apparatus are proposed. The temperature adjustment apparatus includes a first power source, a second power source, an ammeter connected to the second power source in series and configured to measure a current value of the second power source, a heater inducing a first direction current to dissipate heat energy while being connected to the first power source in series during a heating time period, a temperature sensor inducing a second direction current while being connected to the second power source in series during a sensing time period, and a switch controller controlling connection between the first power source and the heater and connection between the second power source and the temperature sensor.

Implementations described herein provide a method for calibrating a temperature of a substrate support assembly which enables discrete tuning of the temperature profile of a substrate support assembly. In one embodiment, a system, comprises a memory, wherein the memory includes an application program configured to perform an operation on a substrate support assembly, a control board disposed in a substrate support assembly, wherein the control board comprises a processor having an wireless interface, a pulse width modification (PWM) heater controller, wherein the processor is connected with the memory to read and access the application program from the memory when in operation, and a heating element coupled to the pulse width modification (PWM) heater controller, wherein the heating element comprises a plurality of spatially tunable heaters that are individually tunable by the pulse width modification (PWM) heater controller.

A method includes: emitting, by a controller, a stimulus at a heating surface of a heater assembly, the stimulus causing a disturbance to a predetermined temperature of the heating surface, wherein the heater assembly has the heating surface and a plurality of heating elements for heating a heating target; receiving, by a control system from the controller, stimulus information; and controlling, by the control system, the heater assembly to maintain a predetermined temperature profile on the heating surface based on the stimulus information from the controller.

An apparatus for processing a substrate may include a processing module including at least one process chamber for processing a desired process on a substrate, an index module for transferring the substrate from an outside into the processing module, and a drying unit for removing a moisture or undesired gases from the at least one process chamber. The drying unit may remove the moisture or the undesired gases from components newly installed in the at least one process chamber.