A ceramic heater with a shaft includes a ceramic plate in which an RF electrode and a resistance heating element are embedded; a hollow ceramic shaft provided on a surface on an opposite side of a wafer placement surface of the ceramic plate; an RF power supply rod which is housed in an inner space of the ceramic shaft, and a heating element power supply rod which is housed in the inner space of the ceramic shaft, wherein an outer circumferential surface of a portion of at least one of the RF power supply rod and the heating element power supply rod is covered with an insulating thin film which is an aerosol deposition film or a thermal spray film, the portion being located in the inner space of the ceramic shaft.

A ceramic heater with a shaft includes: a ceramic plate in which resistance heating elements are embedded; a hollow ceramic shaft bonded to a surface on an opposite side of a wafer placement surface of the ceramic plate; multiple vertical grooves provided in an internal circumferential surface of the ceramic shaft in an axial direction; conductive films provided in the multiple vertical grooves, respectively; and connection members that each electrically connect a terminal of the resistance heating elements to a corresponding one of the conductive films.

A heater power feeding mechanism for independently controlling temperatures of zones of a stage on which a substrate is placed. The respective zones of the stage include heaters. The heater power feeding mechanism includes a plurality of heater terminals configured to be connected to the heaters, a plurality of heater wires connected to the heater terminals, and an offset structure that offsets the heater wires from each other. The heater terminals are disposed on the periphery of a holding plate for holding the stage.

A substrate processing apparatus includes a heater resistor; a digital filter configured to filter at least one of a detection voltage, which is a digital voltage value detected as a voltage applied to the heater resistor, or a detection current, which is detected as a voltage calculated from the heater resistor and a current flowing in the heater resistor and converted into a digital voltage value; and a controller configured to control a temperature of the heater resistor with the detection voltage and the detection current, at least one of the detection voltage or the detection current being filtered by the digital filter.

A substrate processing method includes forming, by supplying a chemical liquid onto a central portion of a substrate while rotating a rotary table at a first speed, a liquid film of the chemical liquid having a first thickness; forming, by supplying the chemical liquid onto the central portion while rotating the rotary table at a second speed lower than the first speed after the forming of the liquid film having the first thickness, a liquid film of the chemical liquid having a second thickness larger than the first thickness; and heating, by heating the rotary table in a state that the rotary table is rotated at a third speed lower than the second speed or in a state that the rotating of the rotary table is stopped after the forming of the liquid film having the second thickness, the substrate and the liquid film of the chemical liquid.

Provided are a plate type heater and a vapor deposition apparatus including the same including: a ceramic plate substrate; a heating wire layer located on the inside or on an upper surface of the ceramic plate substrate; a power supply line; and a bridge located on the heating wire layer and connecting the heating wire and the power supply line, wherein the bridge connects the heating wire and the power supply line by curving a bridge material having a length of 1.2 to 5 times based on the shortest distance between the heating wire and the power supply line.

The inventive concept provides an apparatus for treating a substrate by using a supercritical fluid. In an embodiment, the apparatus may include a process chamber that provides a treatment space, and including a chamber heater that increases a temperature of an interior of the treatment space, a substrate support provided in the treatment space and that supports the substrate, and a substrate heating member that heats a lower surface of the substrate while contacting the lower surface of the substrate.

A heater includes a plate-shaped part, one or more resistance heating element, a columnar part, and a plurality of relay conductors. The plate-shaped part has an insulation property and includes an upper surface on which a wafer is to be superimposed and a lower surface on an opposite side to the upper surface. The one or more resistance heating element is buried in the plate-shaped part. The columnar part has an insulation property and projects downward from the lower surface of the plate-shaped part. The plurality of relay conductors respectively include extension portions vertically extending inside the columnar part and are electrically connected to the one or more resistance heating elements.

An electric resistance radiant furnace is disclosed. Solid ceramic panel emitters having electric resistance wires embedded therein produce heat. A blower receives air from a return duct. Metallic screens are located between the panel emitters. A thermostat is connected to the wires and the blower. Heat is produced by each panel emitter. Part of the heat produced is radiated from the ceramic body to the metallic screens. Air flows in a parallel manner between the panel emitters and along the metallic-screens. The thermostat heat buildup by turning on the panel emitters controlling the blower. A short cycle air pass conduit accepts a portion of heated air from between the multiple panel emitters and to convey the portion of heated air to the return duct, such that the portion of heated air is mixed with return air, and a temperature of the return air provided to the blower is elevated.

A holding device includes a ceramic member and a base member joined together via a joining portion. When a second direction is perpendicular to a first direction and a third direction is perpendicular to the first and second directions, the joining portion includes a first joining part which extends through the joining portion in the second direction, as viewed in the first direction, and whose thickness in the first direction is uniform in an arbitrary cross section perpendicular to the second direction and in an arbitrary cross section perpendicular to the third direction, and at least one second joining part which is located between the first joining part and one end of the joining portion in the third direction and whose thickness in the first direction increases from the first joining part side toward the end of the joining portion in an arbitrary cross section perpendicular to the second direction.