A semiconductor apparatus includes a metal body in which a through hole is formed, a socket that covers the metal body without closing the through hole, a connection terminal connected to the metal body and exposed to an outside of the socket, a control board having a metal pattern and a circuit pattern, and a semiconductor chip having a control terminal connected to the circuit pattern via the through hole without being in contact with the metal body, the connection terminal being connected to the metal pattern.

An electronic device module includes a substrate, a first component disposed on a first surface of the substrate, a sealing portion disposed on the first surface of the substrate, a second component disposed on the first surface of the substrate and embedded in the sealing portion, and a shielding wall at least partially disposed between the first component and the second component and including a portion having a height, with respect to the first surface of the substrate, that is lower than a height of the sealing portion.

This document describes an access point device and associated systems and methods. The techniques and systems include an access point device that includes a housing with an antenna carrier, a circuit board assembly, a heat sink, and a heat shield positioned within the housing. The housing includes a top housing member connected to a bottom housing member. The top housing member includes a concave-down top-end portion connected to a generally cylindrical vertical wall via rounded corners. The antenna carrier supports multiple antennas positioned proximate to an inner surface of the vertical wall. The heat sink is positioned between the antenna carrier and the circuit board assembly. The circuit board assembly is positioned between the heat shield and the heat sink, and the heat shield is positioned between the circuit board assembly and the bottom housing member.

An AP device includes a lower housing, a PCB assembly, and an upper cover. The PCB assembly is located in a cavity between the upper cover and the lower housing. The PCB assembly includes a PCB, an antenna, a first device, and a second device. The antenna is fastened to an upper surface of the PCB. The first device is located on the upper surface, and a height of the first device is less than a first height threshold or a conductor structure proportion is less than a proportion threshold. The second device is located on a lower surface of the PCB, and a height of the second device is greater than the first height threshold and a conductor structure proportion is greater than the proportion threshold

A semiconductor composite device is provided that includes a voltage regulator, a package board, and a load, and converts an input DC voltage into a different DC voltage to supply the converted DC voltage to the load. The VR includes a semiconductor active element. The package board includes a C layer in which a capacitor is formed, and an L layer in which an inductor is formed. A plurality of through holes penetrate the C layer and the L layer in a direction perpendicular to the mounting face in the package board. The capacitor is connected to the load through the through hole. The inductor is connected to the load through the through hole and to the VR through the through hole.

RF transistor amplifiers include an RF transistor amplifier die having a semiconductor layer structure, a coupling element on an upper surface of the semiconductor layer structure, and an interconnect structure on an upper surface of the coupling element so that the RF transistor amplifier die and the interconnect structure are in a stacked arrangement. The coupling element includes a first shielded transmission line structure.

An example electronic device includes a printed circuit board on which one or more circuit components are disposed, and an interposer surrounding at least some circuit components of the one or more circuit components and including an inner surface adjacent to the at least some circuit components and an outer surface facing away from the inner surface and having a plurality of through holes. The interposer is disposed on the printed circuit board such that one or more through holes of the plurality of through holes are electrically connected with a ground of the printed circuit board. The outer surface of the interposer includes a first conductive region electrically connected with at least one first through hole of the one or more through holes, and a non-conductive region, the inner surface of the interposer includes a second conductive region electrically connected with at least one second through hole of the one or more through holes, and the second conductive region includes a region facing the non-conductive region.

Electronic chip comprising a first integrated circuit, a second integrated circuit, a first link connecting the first integrated circuit and the second integrated circuit, a second link connecting the first integrated circuit and the second integrated circuit, a surface-mount component, the component being configured and placed to limit an electromagnetic disturbance by the first link of the second link.

A data transmission circuit board, a mobile industry processor interface and a device are provided. The data transmission circuit board includes: a wiring substrate; a plurality of data transmission line pairs on one side of the wiring substrate; and a plurality of transient voltage suppression diodes on the one side of the wiring substrate. Data transmission lines of the data transmission line pairs are coupled to the transient voltage suppression diodes in a one-to-one correspondence, the line width of at least one data transmission line is within a line width threshold range; and the transient voltage suppression diode is configured to discharge when a voltage to ground on the corresponding data transmission line is greater than a discharge voltage threshold, wherein the discharge voltage threshold is not less than a maximum voltage value of the differential signal transmitted on the data transmission line.

RF transistor amplifiers include an RF transistor amplifier die having a semiconductor layer structure, a coupling element on an upper surface of the semiconductor layer structure, and an interconnect structure on an upper surface of the coupling element so that the RF transistor amplifier die and the interconnect structure are in a stacked arrangement. The coupling element includes a first shielded transmission line structure.