The present invention relates to a metalized ceramic substrate and a method for manufacturing the same. The method for manufacturing a metalized ceramic substrate of the present invention comprises the steps of: mixing copper powder and metal oxide to manufacture a copper paste; applying the copper paste to an upper surface of a ceramic substrate; and sintering the copper paste to form a copper metallization layer on the upper surface of the ceramic substrate. According to the present invention, it is possible to form, on the ceramic substrate, a thin copper metallization layer with high density, high bonding strength and low impurities.

The laminate of the present disclosure includes multiple glass ceramic layers each containing quartz and a glass that contains SiO.sub.2, B.sub.2O.sub.3, Al.sub.2O.sub.3, and M.sub.2O, where M is an alkali metal. The B concentration of a surface layer portion of the laminate is lower than the B concentration of an inner layer portion of the laminate.

A ceramic substrate includes an electrode on an electronic component mounting surface. A resist dividing the electrode into a plurality of electrode pieces by extending across the electrode is disposed on the electronic component mounting surface. Two of the electrode pieces may be connected to each other by a portion of the electrode that is concealed under the resist.

A conductive pattern having high dispersion stability and a low resistance over a board is formed. A dispersing element (1) contains a copper oxide (2), a dispersing agent (3), and a reductant. Content of the reductant is in a range of a following formula (1). Content of the dispersing agent is in a range of a following formula (2).

0.0001≤(reductant mass/copper oxide mass)≤0.10  (1)

0.0050≤(dispersing agent mass/copper oxide mass)≤0.30  (2)

The dispersing element containing the reductant promotes reduction of copper oxide to copper in firing and promotes sintering of the copper.

A feedthrough assembly (1) comprising a feedthrough body (10) comprising: a ceramic body (2) having a first side (3) and a second side (4); a conductive element (5) extending through said ceramic body (2) between said first side (3) and said second side (4); a conductive pad (6) electrically connected to said conductive element (5). The conductive pad (6) comprises a multi-layered arrangement comprising: a bonding layer (7) comprising one or more elements selected from the group consisting of Ti, Zr, Nb and V, said bonding layer in bonding contact with an end of the conductive element and the first or second side of the ceramic body; and at least one of a diffusion barrier layer (8) directly disposed upon said bonding layer, comprising one or more elements selected from the group consisting of Nb, Ta, W, Mo and nitrides thereof, and at least one of (i) said diffusion layer having a different composition than the bonding layer; and (ii) one or more sealing layers (9, 9a, 9b), disposed upon said diffusion barrier layer.

The present invention provides a solvent composition for use in an ink for producing an electronic device using a printing method, the solvent composition being capable of improving the printing accuracy of the ink, being fired at low temperatures, and suppressing the amount of ash remaining after firing to a very low amount. The solvent composition for electronic device production of the present invention is for use in an ink for producing an electronic device by a printing method, and contains a miscible product of: a solvent and a compound represented by Formula (1) below. In Formula (1), R represents the same or different aliphatic hydrocarbon groups having 1 or more carbon atoms.

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A ceramic substrate according to the present disclosure includes a plurality of electrodes on an electronic component mounting surface, and one or more interelectrode wires that connect the electrodes to each other on the electronic component mounting surface. A resist that extends across the interelectrode wire is disposed on the electronic component mounting surface.

In a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, dislocation defect portions exists inside at least some of the silicon nitride crystal grains. A percentage of a number of the at least some of the silicon nitride crystal grains among any 50 of the silicon nitride crystal grains having completely visible contours in any cross section or surface of the silicon nitride sintered body is not less than 50% and not more than 100%. It is favorable that a plate thickness of the silicon nitride substrate, in which the silicon nitride sintered body is used, is within the range not less than 0.1 mm and not more than 0.4 mm. The TCT characteristics can be improved by using the silicon nitride substrate in the silicon nitride circuit board.

A conductive paste for N-type solar cells, comprising (a) 70 to 99.75 wt % of a silver power; (b) 0.1 to 3.0 wt % of an aluminum powder, wherein D50 of the aluminum powder is not larger than 3 μm; (c) 5 to 10 wt % of a glass frit; and (d) 3 to 30 wt % of an organic medium; wherein % is based on the total weight of the paste composition.

A ceramic copper circuit board according to an embodiment includes a ceramic substrate and a first copper part. The first copper part is bonded at a first surface of the ceramic substrate via a first brazing material part. The thickness of the first copper part is 0.6 mm or more. The side surface of the first copper part includes a first sloped portion. The width of the first sloped portion is not more than 0.5 times the thickness of the first copper part. The first brazing material part includes a first jutting portion jutting from the end portion of the first sloped portion. The length of the first jutting portion is not less than 0 m and not more than 200 m. The contact angle between the first jutting portion and the first sloped portion is 65 or less.