A mask structure and a manufacturing method of the mask structure are provided. The mask structure includes a transparent substrate, a patterned metal layer, and a plurality of microlens structures. The patterned metal layer is disposed on the transparent substrate and exposing a portion of the transparent substrate. The microlens structures are disposed on the transparent substrate exposed by a portion of the patterned metal layer and being in contact with the portion of the patterned metal layer.

A thermoplastic composition including a) 20 to 90 wt. % of a thermoplastic resin, b) 0.1 to 80 wt. % of a laser direct structuring additive and c) 10 to 80 wt. % of ceramic filler particles which do not have a laser direct structuring additive function, wherein at least 80 wt. % of c) is TiO2, wherein the composition has a loss tangent measured at 40 GHz of at most 0.014, wherein the total amount of a), b) and c) is 95 to 100 wt. % with respect to the total composition, wherein the composition further includes f) one or more additives, wherein the total amount of the additives is 0.1 to 5 wt. %, 0.3 to 5 wt. % or 0.3 to 3 wt. % relative to the total weight of the composition.

A circuit structure that comprises a substrate and one or more conductive elements disposed on the substrate is provided. The substrate comprises a polymer composition that comprises an electrically conductive filler distributed within a polymer matrix. The polymer matrix contains at least one thermoplastic high performance polymer having a deflection temperature under load of about 40° C. or more as determined in accordance with ISO 75-2:2013 at a load of 1.8 MPa, and the polymer composition exhibits a dielectric constant of about 4 or more and a dissipation factor of about 0.3 or less, as determined at a frequency of 2 GHz.

A method for producing a plated part, includes: forming, on a surface of a base member, a catalyst activity inhibiting layer containing a polymer which has at least one of an amide group and an amino group; irradiating with light or heating a part of the surface of the base member on which the catalyst activity inhibiting layer is formed; applying an electroless plating catalyst to the surface of the base member heated or irradiated with the light; and bringing an electroless plating solution into contact with the surface of the base member to which the electroless plating catalyst is applied, to form an electroless plating film at a light-irradiated portion or a heated portion of the surface.

The thermosetting resin composition for LDS of the invention includes a thermosetting resin, an inorganic filler, a non-conductive metal compound that forms a metal nucleus upon irradiation with active energy rays, and a coupling agent, in which the non-conductive metal compound includes one or more selected from the group consisting of a spinel-type metal oxide, a metal oxide having two or more transition metal elements in groups adjacent to each other, the groups being selected from groups 3 to 12 of the periodic table, and a tin-containing oxide, and the coupling agent includes one or more selected from the group consisting of mercaptosilane, aminosilane, and epoxysilane.

A catalyst ink for plating and a method for electrochemically manufacturing an electronic device by using same are disclosed. The present invention provides a catalyst ink for plating, comprising: a polymer binder; a metal ion as a catalyst; a silane coupling agent for coupling the metal ion and the polymer; and a solvent, wherein the polymer has a lower critical solution temperature in the temperature-composition phase diagram for a solvent-polymer binary system, and the lower critical solution temperature is 30° C. or higher. According to the present invention, a high resolution plated pattern having a line width and a width between lines can be manufactured.

A base material for a printed circuit of the present disclosure includes a base film containing polyimide as a main component, and a conductor layer formed on at least one surface of the base film. The conductor layer includes a metal sintered layer formed on the base film and an electroless plating layer formed on the metal sintered layer, and in the base film, a number of voids having a maximum width of 5 μm or more in plan view is 10 or less per a reference unit area of 0.25 mm.sup.2 on a surface of the base film.

A circuit structure that comprises a substrate and one or more conductive elements disposed on the substrate is provided. The substrate comprises a polymer composition that comprises an electrically conductive filler distributed within a polymer matrix. The polymer matrix contains at least one thermoplastic high performance polymer having a deflection under load of about 40° C. or more as determined in accordance with ISO 75-2:2013 at a load of 1.8 MPa, and the polymer composition exhibits a dielectric constant of about 4 or more and a dissipation factor of about 0.3 or less, as determined at a frequency of 2 GHz.

Disclosed is a composition comprising: from about 10 wt. % to about 90 wt. % of a thermoplastic resin, wherein the thermoplastic resin comprises a polyphenylene sulfide resin; from about 0.01 to 10 wt. % of a laser direct structuring additive; from about 0.01 wt. % to about 50 wt. % of laser breakable filler, wherein the composition exhibits a dissipation factor of less than 0.01 at frequencies of 1 GHz to 20 GHz frequencies when measured using a dielectric resonator, and wherein the combined weight percent value of all components does not exceed 100 wt. %, and all weight percent values are based on the total weight of the composition.

A method for selectively metallizing a surface of a ceramic substrate, a ceramic product and use of the ceramic product are provided. The method comprises steps of: A) molding and sintering a ceramic composition to obtain the ceramic substrate, in which the ceramic composition comprises a ceramic powder and a functional powder dispersed in the ceramic powder; the ceramic powder is at least one selected from a group consisting of an oxide of E, a nitride of E, a oxynitride of E, and a carbide of E; E at least one selected from a group consisting of Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, B, Al, Ga, Si, Ge, P, As, Sc, Y, Zr, Hf, is and lanthanide elements; the functional powder is at least one selected from a group consisting of an oxide of M, a nitride of M, a oxynitride of M, a carbide of M, and a simple substance of M; and M is at least one selected from a group consisting of Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Ta, W, Re, Os, Ir, Pt, Au, In, Sn, Sb, Pb, Bi, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu; B) radiating a predetermined region of the surface of the ceramic substrate using an energy beam to form a chemical plating active center on the predetermined region of the surface of the ceramic substrate; and C) performing chemical plating on the ceramic substrate formed with the chemical plating active center to form a metal layer on the predetermined region of the surface of the ceramic substrate.