A method of forming a device associated with a via includes forming an opening or via, and forming at least a pair of conducting paths within the via. Also disclosed is a via having at pair of conducting paths therein.

A material for forming of the capacitor layer which generates no crack in drilling on the dielectric layer of the capacitor in manufacturing of a highly multilayered printed wiring board embedded a capacitor circuit. Copper clad laminate for forming of an embedded capacitor layer of a multilayered printed wiring board including an embedded capacitor circuit having a layer structure of copper layer/dielectric layer of the capacitor/copper layer in an inner layer characterized in that the composite elastic modulus Er of the resin film constituting the dielectric layer of the capacitor along the thickness direction is less than 6.1 GPa is employed.

An electrical component provides a ceramic element located on or in a dielectric substrate between and in contact with a pair of electrical conductors, wherein the ceramic element includes one or more metal oxides having fluctuations in metal-oxide compositional uniformity less than or equal to 1.5 mol % throughout the ceramic element. A method of fabricating an electrical component, provides or forming a ceramic element between and in contact with a pair of electrical conductors on a substrate including depositing a mixture of metalorganic precursors and causing simultaneous decomposition of the metal oxide precursors to form the ceramic element including one or more metal oxides.

Some embodiments include a capacitive chip having a plurality of capacitive units. The individual capacitive units include alternating electrode layers and dielectric layers in a capacitor stack. The capacitor stack extends across an undulating topography. The undulating topography has peaks and valleys with the peaks being elevationally offset relative to the valleys by a distance within a range of from about 30 microns to about 100 microns. The capacitor stack includes at least about 10 total layers. Some embodiments include apparatuses and multi-chip modules having capacitor chips.

Some embodiments include a capacitive chip having a plurality of capacitive units. The individual capacitive units include alternating electrode layers and dielectric layers in a capacitor stack. The capacitor stack extends across an undulating topography. The undulating topography has peaks and valleys with the peaks being elevationally offset relative to the valleys by a distance within a range of from about 30 microns to about 100 microns. The capacitor stack includes at least about 10 total layers. Some embodiments include apparatuses and multi-chip modules having capacitor chips.

Some embodiments include a capacitive chip having a plurality of capacitive units. The individual capacitive units include alternating electrode layers and dielectric layers in a capacitor stack. The capacitor stack extends across an undulating topography. The undulating topography has peaks and valleys with the peaks being elevationally offset relative to the valleys by a distance within a range of from about 30 microns to about 100 microns. The capacitor stack includes at least about 10 total layers. Some embodiments include apparatuses and multi-chip modules having capacitor chips.

The present invention offers a device requiring a reduced number of manufacturing processes and providing high electrical reliability, and a method for manufacturing the device. The method for manufacturing the device forms through holes in a substrate, fills the through holes with a conductive material through electroplating from a first surface side of the substrate, polishes the conductive material to form through wirings, and forms an element portion on the first surface side. Then, the method processes the substrate so that the positions of the end faces of the through wirings measured from the substrate surface on the first surface side are made smaller in depth than the positions of the end faces of the through wirings measured from the substrate surface on the second surface side.

A circuit card assembly includes a substrate having longitudinally spaced first and second substrate end edges and transversely spaced top and bottom substrate surfaces. The top and/or bottom substrate surface has first, second, and third substrate regions. The first substrate region is directly laterally adjacent the first substrate side edge. The third substrate region is directly laterally adjacent the second substrate side edge. The second substrate region is located between the first and third substrate regions. At least one circuit trace is located on the selected substrate surface. The portion of the circuit trace in the first substrate region is made of only a first material. The portion of the circuit trace in the third substrate region is made of only a second material. The portion of the circuit trace in the second substrate region is made of both the first and second materials.

A circuit card assembly includes a substrate having longitudinally spaced first and second substrate end edges and transversely spaced top and bottom substrate surfaces. The top and/or bottom substrate surface has first, second, and third substrate regions. The first substrate region is directly laterally adjacent the first substrate side edge. The third substrate region is directly laterally adjacent the second substrate side edge. The second substrate region is located between the first and third substrate regions. At least one circuit trace is located on the selected substrate surface. The portion of the circuit trace in the first substrate region is made of only a first material. The portion of the circuit trace in the third substrate region is made of only a second material. The portion of the circuit trace in the second substrate region is made of both the first and second materials.