H05K2203/0793

METHOD OF FORMING A METAL LAYER AND METHOD OF MANUFACTURING A SUBSTRATE HAVING SUCH METAL LAYER

In a substrate like a printed circuit board comprising an insulator and a copper layer laminated on part of the insulator, the insulator outer surface and the copper layer outer surface are simultaneously subjected to (1) a process including treatment with an alkali metal hydroxide solution, (2) a process including treatment with an alkaline aqueous solution containing an aliphatic amine, (3) a process including treatment with an alkaline aqueous solution having a permanganate concentration of 0.3 to 3.5 wt % and a pH of 8 to 11, (4) a process including treatment with an acidic microemulsion aqueous solution containing a thiophene compound and an alkali metal salt of polystyrenesulphonic acid, and (5) a process including copper electroplating, which are implemented sequentially.

Hot melt compositions with improved etch resistance

Hot melt compositions include non-aromatic cyclic (alkyl)acrylates and low acid number waxes. Upon application of actinic radiation, the hot melt compositions cure to form resists. They may be stripped from substrates with high alkaline strippers. The hot melt compositions may be used in the manufacture of printed circuit boards and photovoltaic devices.

Hot melt compositions with improved etch resistance

Hot melt compositions include non-aromatic cyclic (alkyl)acrylates and low acid number waxes. Upon application of actinic radiation, the hot melt compositions cure to form resists. They may be stripped from substrates with high alkaline strippers. The hot melt compositions may be used in the manufacture of printed circuit boards and photovoltaic devices.

METHOD OF SELECTIVELY ETCHING A METAL LAYER FROM A MICROSTRUCTURE
20170060282 · 2017-03-02 ·

The invention relates to a method of etching a portion of a metal layer of a microstructure comprised of the metal layer disposed on a transparent conducting oxide (TCO) layer, and in particular, to selectively etching the portion of the metal layer and not the TCO layer.

Method for producing a resin substrate having a metal film pattern formed thereon

The purpose of the present invention is to provide a method for using a metal ion solution of low concentration to efficiently form a metal film pattern of excellent accuracy and reliable adhesion on a resin substrate. A resin substrate having a metal film pattern formed thereon is produced by a method that includes the following steps (a) to (e): (a) a step for pattern-printing of a latent image agent (2) onto the surface of a resin substrate (1) ; (b) a step for bringing the area imprinted with the latent image agent (2) into contact with a solution containing metal ions, and forming a metal salt (3); (c) a step for bringing the metal salt (3) into contact with an acidic treatment liquid containing a reducing agent, and reducing the metal salt; (d) a step for forming an electroless nickel plating film (5) on the area imprinted with the latent image agent; and (e) a step for precipitating an electroless copper plating (6) onto the surface of the nickel plating film (5).

ELECTROLESS METALLIZATION OF DIELECTRICS WITH ALKALINE STABLE PYRIMIDINE DERIVATIVE CONTAINING CATALYSTS

Pyrimidine derivatives which contain one or more electron donating groups on the ring are used as catalytic metal complexing agents in aqueous alkaline environments to catalyze electroless metal plating on metal clad and un-clad substrates. The catalysts are monomers and free of tin and antioxidants.

PROCESS FOR ETCHING CIRCUIT BOARD WITH ALKALINE TETRAAMMINECOPPER (II) SULFATE AND APPARATUS THEREFOR
20250290205 · 2025-09-18 ·

The present disclosure discloses a process for etching a circuit board with alkaline tetraamminecopper (II) sulfate, including an etching solution for etching the circuit board coated with an etching-resist metal layer, where the etching solution includes tetraamminecopper (II) sulfate, a complexed ammonia supply source, and a formate supply source; and the tetraamminecopper (II) sulfate serves as a copper etching agent to etch the circuit board, and the copper etching agent in the etching solution is regenerated by a copper etching agent-oxidation regeneration reaction supply source to maintain an etching rate. The present disclosure solves the production process problem that an etching solution causes corrosion to an etching-resist silver or tin layer in the prior art.

METHOD FOR CLEANING A NONCONDUCTIVE SURFACE AND USE
20250324516 · 2025-10-16 · ·

The invention relates to a method for cleaning a nonconductive surface of a nonconductive layer, wherein the nonconductive layer is basing on a composite of an organic polymer and the glass filler and comprising a blind micro via (BMV), for manufacturing an article with an integrated circuit, wherein the nonconductive surface comprises a nonconductive wall surface of the BMV, wherein the nonconductive layer is attached to a copper layer and wherein the copper layer forms the bottom of the BMV, wherein the method comprises the steps in the following order: (i) providing the non-conductive surface of the nonconductive layer; (ii) treating the provided surface with a desmear process comprising the following steps in this order: (t1) treatment with a sweller solution comprising water and an organic solvent, (t2) treatment with an aqueous etching solution comprising an oxidation agent, and (t3) treatment with an aqueous reduction solution comprising a reduction agent; (iii) treating the surface treated in step (ii) with an aqueous alkaline cleaner solution in order to remove the glass filler, wherein the aqueous alkaline cleaner solution; and (iv) drying the surface treated in step (iii) in order to get a dry surface, preferably water-free surface; and a use of the method.

Insulating circuit board and semiconductor device in which same is used

According to an embodiment, a ceramic copper circuit board in which the reliability of bonding with a bonding layer is improved is provided, and an insulating circuit board includes an insulating substrate and a conductor part bonded to at least one surface of the insulating substrate. In XPS analysis of a nitrogen amount at the conductor part surface, an average value of the nitrogen amount at any three locations is within a range of not less than 0 at % and not more than 50 at %. In XPS analysis of the oxygen amount at the conductor part surface, the average value of the three locations is favorably within the range of not less than 3 at % and not more than 30 at %. The ratio of the nitrogen amount to the oxygen amount is favorably not less than 0 and not more than 5.