The present disclosure provides a display panel and an electronic device. The display panel comprises: a substrate, wherein a metal layer and an anti-reflection film are disposed on the substrate, the anti-reflection film is disposed on a light-emitting side of the metal layer, and the anti-reflection film comprises a protective layer and a darkening layer; wherein the protective layer is disposed between the darkening layer and the metal layer, and a material of the darkening layer comprises at least one of Mo.sub.aX.sub.bO.sub.c, Mo.sub.aX.sub.bN.sub.d, Mo.sub.aX.sub.bO.sub.cN.sub.d, Mo.sub.aX.sub.bW.sub.c, Mo.sub.aX.sub.bC.sub.c, or Al.sub.aO.sub.bN.sub.c, wherein a, c, and d are rational numbers greater than 0, b is a rational number greater than or equal to 0, and X is at least one of tantalum, vanadium, nickel, niobium, zirconium, tungsten, titanium, rhenium, or hafnium. The display panel and the electronic device of the present disclosure can improve display effect and display quality.

The present invention relates to a process for the preparation of a top-gate, bottom-contact organic field effect transistor on a substrate, which organic field effect transistor comprises source and drain electrodes, a semiconducting layer, a cured first dielectric layer and a gate electrode, and which process comprises the steps of: i) applying a composition comprising an organic semiconducting material to form the semiconducting layer, ii) applying a composition comprising a first dielectric material and a crosslinking agent carrying at least two azide groups to form a first dielectric layer, iii) curing portions of the first dielectric layer by light treatment, iv) removing the uncured portions of the first dielectric layer, and v) removing the portions of the semiconducting layer that are not covered by the cured first dielectric layer, wherein the first dielectric material comprises a star-shaped polymer consisting of at least one polymer block A and at least two polymer blocks B, wherein each polymer block B is attached to the polymer block A, and wherein at least 60 mol % of the repeat units of polymer block B are selected from the group consisting of Formulas (1A), (1B), (1C), (1D), (1E) and (1F), wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7 and R.sup.8 are independently and at each occurrence H or C.sub.1-C.sub.10-alkyl.

##STR00001##

A biosensor for an analyte monitoring system. In one embodiment, the biosensor includes a cascode common source transimpedance amplifier circuit, an analog to digital converter, and an output circuit. The cascode common source transimpedance amplifier circuit is configured to receive an electrical current generated by an electrochemical reaction of an analyte on a test strip. The cascode common source transimpedance amplifier circuit is also configured to convert the electrical current to an analog voltage signal. The analog to digital converter is configured to convert the analog voltage signal to a digital voltage signal. The output circuit is configured to transmit a signal indicating a measured level of the analyte based on the digital voltage signal.

The present disclosure provides a display panel, a display device, and a method for manufacturing a display panel. The display panel includes a pixel unit. The pixel unit includes a plurality of sub-pixel units. Each of the plurality of sub-pixel units includes at least one transparent film layer. Each of the plurality of sub-pixel units is divided into a light-emitting area and a light-transmitting area, and the quantity of the transparent film layer in the light-transmitting area is smaller than the quantity of the transparent film layer in the light-emitting area.

In a method of forming a gate-all-around field effect transistor (GAA FET), a bottom support layer is formed over a substrate and a first group of carbon nanotubes (CNTs) are disposed over the bottom support layer. A first support layer is formed over the first group of CNTs and the bottom support layer such that the first group of CNTs are embedded in the first support layer. A second group of carbon nanotubes (CNTs) are disposed over the first support layer. A second support layer is formed over the second group of CNTs and the first support layer such that the second group of CNTs are embedded in the second support layer. A fin structure is formed by patterning at least the first support layer and the second support layer.

The present disclosure provides fine electrodes in which an organic semiconductor does not easily change with time, and which can be applied to manufacturing of a practical integrated circuit of an organic semiconductor device. The present disclosure relates to electrodes for source/drain of an organic semiconductor device, comprising 10 or more sets of electrodes, wherein a channel length between the electrodes in each set is 200 μm or less, and the electrodes in each set have a surface with a surface roughness Rq of 2 nm or less.

The present disclosure provides a display panel, a display device, and a method for manufacturing a display panel. The display panel includes a pixel unit. The pixel unit includes a plurality of sub-pixel units. Each of the plurality of sub-pixel units includes at least one transparent film layer. Each of the plurality of sub-pixel units is divided into a light-emitting area and a light-transmitting area, and the quantity of the transparent film layer in the light-transmitting area is smaller than the quantity of the transparent film layer in the light-emitting area.

A method includes forming a first low-dimensional layer over an isolation layer, forming a first insulator over the first low-dimensional layer, forming a second low-dimensional layer over the first insulator, forming a second insulator over the second low-dimensional layer, and patterning the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator into a protruding fin. Remaining portions of the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator form a first low-dimensional strip, a first insulator strip, a second low-dimensional strip, and a second insulator strip, respectively. A transistor is then formed based on the protruding fin.

A method of making flexible and stretchable semiconductor devices with reduced footprints can include coating a gate electrode layer having a first composition over an elastomer layer, solidifying a portion of the gate electrode layer by irradiation to form a gate electrode, coating a dielectric layer having a second composition over the gate electrode layer, solidifying a portion of the dielectric layer by the irradiation to form a gate dielectric, coating a semiconductor layer having a third composition over the dielectric layer, solidifying a portion of the semiconductor layer by the irradiation to form a device core, coating a terminal layer having the first composition over the dielectric layer, and solidifying a portion of the terminal layer by the irradiation to form a source electrode and a drain electrode contacting the semiconductor layer.

An organic thin-film transistor includes an insulating substrate, a capacitor electrode formed on the insulating substrate, a first insulating layer covering the capacitor electrode, a gate electrode formed on the first insulating layer, a second insulating layer covering the gate electrode and the capacitor electrode, a source electrode formed on the second insulating layer, a drain electrode formed on the second insulating layer, and a semiconductor layer formed on the second insulating layer in a portion between the source electrode and the drain electrode and including an organic semiconductor material.