A thin-film transistor including a substrate, a gate electrode positioned on the substrate, a gate insulating layer positioned on the substrate and the gate electrode, a source electrode positioned on the gate insulating layer, a drain electrode positioned on the gate insulating layer, a semiconductor layer connected to the source electrode and the drain electrode, and a protective layer positioned on the semiconductor layer. The source electrode and the drain electrode each have a surface including asperities.

Provided are an organic electroluminescence device having high current efficiency and a long lifetime, and a biscarbazole derivative for realizing the device. The biscarbazole derivative has a specific substituent. The organic EL device has a plurality of organic thin-film layers including a light emitting layer between a cathode and an anode, and at least one layer of the organic thin-film layers contains the biscarbazole derivative.

The metal thin film production method of the present invention includes, in the following order, the steps of: preparing a substrate (1) having thereon an underlayer (2) formed of an insulating resin; subjecting a surface of the underlayer (2) to a physical surface treatment for breaking bonds of organic molecules constituting the insulating resin; subjecting the substrate (1) to a heat treatment at a temperature of 200° C. or lower; applying a metal nanoparticle ink to the underlayer (2); and sintering metal nanoparticles contained in the metal nanoparticle ink at a temperature equal to or higher than a glass transition temperature of the underlayer (2). A fused layer (4) having a thickness of 100 nm or less is formed between the underlayer (2) and a metal thin film (3) formed by sintering the metal nanoparticles.

The present invention provides: a film that comprises single-layer carbon nanotubes having shapes which enable the characteristics thereof to be sufficiently exhibited; and a process for producing the film. The film, which comprises single-layer carbon nanotubes, has portions where single-layer carbon nanotubes are densely present and portions where single-layer carbon nanotubes are sparsely present, the dense portions forming a pseudo-honeycomb structure in a surface of the film.

A method for making a metal oxide semiconductor carbon nanotube thin film transistor circuit. A p-type carbon nanotube thin film transistor and a n-type carbon nanotube thin film transistor are formed on an insulating substrate and stacked with each other. The p-type carbon nanotube thin film transistor includes a first semiconductor carbon nanotube layer, a first drain electrode, a first source electrode, a functional dielectric layer, and a first gate electrode. The n-type carbon nanotube thin film transistor includes a second semiconductor carbon nanotube layer, a second drain electrode, a second source electrode, a first insulating layer, and a second gate electrode. The first drain electrode and the second drain electrode are electrically connected with each other. The first gate electrode and the second gate electrode are electrically connected with each other.

A metal oxide semiconductor carbon nanotube thin film transistor circuit includes a p-type carbon nanotube thin film transistor and a n-type carbon nanotube thin film transistor stacked with each other. The p-type carbon nanotube thin film transistor includes a first semiconductor carbon nanotube layer, a first drain electrode, a first source electrode, a functional dielectric layer, and a first gate electrode. The n-type carbon nanotube thin film transistor includes a second semiconductor carbon nanotube layer, a second drain electrode, a second source electrode, a first insulating layer, and a second gate electrode. The first drain electrode and the second drain electrode are electrically connected with each other. The first gate electrode and the second gate electrode are electrically connected with each other.

A semiconductor memory device of an embodiment includes a semiconductor layer, a gate electrode, and a charge storing layer provided between the semiconductor layer and the gate electrode. The charge storing layer includes polyoxometalates that contain copper (Cu) and tungsten (W).

A method of making N-type semiconductor layer includes following steps. A semiconductor carbon nanotube layer is provided. A hafnium oxide layer is deposited on the semiconductor carbon nanotube layer via atomic layer deposition, wherein the atomic layer deposition includes following substeps. The semiconductor carbon nanotube layer is located into an atomic layer deposition system. The semiconductor carbon nanotube layer is heated to a temperature ranging from about 140° C. to about 200° C. A protective gas is continuously introduced into the atomic layer deposition system. The hafnium oxide layer is formed on the semiconductor carbon nanotube layer via introducing hafnium source and water vapor one by one into the atomic layer deposition system in a pulse manner.

Novel compounds useful as organic semiconductor material are described. Semiconductor devices containing said organic semiconductor material are also described.

A semiconductor composition for producing a semiconducting layer with consistently high mobility is disclosed. The semiconductor composition includes a diketopyrrolopyrrole-thiophene copolymer and an aromatic non-halogenated hydrocarbon solvent. The copolymer has a structure disclosed within. The aromatic non-halogenated aromatic hydrocarbon solvent contains sidechains having at least 2 carbon atoms and the aromatic ring contains at least 3 hydrogen atoms.