Objects of the present invention is to provide an organic semiconductor element having high mobility and to provide a composition for forming an organic semiconductor film with which an organic semiconductor film having high mobility can be formed, a method of manufacturing an organic semiconductor element formed from the composition for forming an organic semiconductor film, and a method of manufacturing an organic semiconductor film.

The organic semiconductor element according to the present invention has a semiconductor active layer including a compound that is represented by Formula 1 and has a molecular weight of 3,000 or less. The composition for forming an organic semiconductor film according to the present invention contains a compound that is represented by Formula 1 and has a molecular weight of 3,000 or less, and a solvent.

##STR00001##

A polymer containing at least one unit of formula

##STR00001##

is prepared by treating a compound of formula

##STR00002##

wherein Y.sup.2 is I, Br, Cl or O—S(O).sub.2CF.sub.3,
with an S-donor agent, in order to obtain the compound of formula

##STR00003##

wherein Y.sup.2 is as defined for the compound of formula (5).

The present invention relates to a composition for an insulator of a thin film transistor, an insulator and an organic thin film transistor comprising the same. The insulator of a thin film transistor prepared with the composition of the present invention displays an excellent permittivity along with a low surface energy, and the organic thin film transistor comprising the same displays an improved organic semiconductor morphology formed on the top surface of the insulator, so that it can bring the effect of reducing leakage current density, improving charge carrier mobility, and improving current on/off ratio.

An organic thin film transistor and a method of manufacturing the same, the transistor including a gate electrode; an organic semiconductor layer overlapping the gate electrode; and an insulating layer between the gate electrode and the organic semiconductor layer, the insulating layer having an organic/inorganic hybrid region, wherein the organic/inorganic hybrid region includes a polymer and an inorganic material that is chemically bonded to the polymer through a reactive group on the polymer, and the insulating layer includes a space adjacent to the polymer, the inorganic material being positioned in the space.

Disclosed are an organic semiconductor thin film, a manufacturing method thereof, and a thin film transistor and an electronic device including the organic semiconductor thin film. The organic semiconductor thin film includes a matrix. The matrix includes an elastomer and nanoconfined polymer structures embedded in the matrix. The nanoconfined polymer structures form a polymer network. The nanoconfined polymer structures include a conjugation semiconductor polymer. The conjugation semiconductor polymer includes a repeating unit having at least one conjugation system in its main chain. The nanoconfined polymer structures are present in an upper surface layer and a lower surface layer of the organic semiconductor thin film respectively.

A polymeric dielectric may include a coordination complex of a modified elastic polymer and a metal cation. The modified elastic polymer may include an organic ligand moiety that coordinates the metal cation in a main chain of the elastic polymer. Provided are a method of manufacturing the same, and an electronic device and a thin film transistor including the same.

A thin film transistor includes a gate electrode, a insulating medium layer and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating medium layer. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode, the second end is located on the surface of the insulating medium layer. The semiconducting structure includes a nano-scale semiconductor structure. The second electrode is located on the second end.

A field effect transistor array comprising a substrate and a plurality of single wall carbon nano-tubes disposed on a surface of the substrate. A plurality of electrodes are disposed over the nano-tubes such that the conductive strips are spaced-apart from each other. These electrodes form the contact point for the drain and source of the field effect transistor, while one or more of the nano-carbon tubes form the channel between the source and the drain.

A method for producing a spatially patterned structure includes forming a layer of a material on at least a portion of a substructure of the spatially patterned structure, forming a barrier layer of a fluorinated material on the layer of material to provide an intermediate structure, and exposing the intermediate structure to at least one of a second material or radiation to cause at least one of a chemical change or a structural change to at least a portion of the intermediate structure. The barrier layer substantially protects the layer of the material from chemical and structural changes during the exposing. Substructures are produced according to this method.

An organic electronic component contains a substrate, a first electrode, a second electrode and at least one electron transport layer between the first and second electrode. The electron transport layer is a salt-like derivative of a phosphorus oxo compound as n-dopant.