A technique comprising: forming a patterned mask over an organic semiconductor layer; using the patterned mask to pattern a layer over the organic semiconductor layer; exposing the patterned mask to radiation that renders the patterned mask soluble in a solvent; and then dissolving away the patterned mask using the solvent.

In a method, a charged metal dot is deposited on a first position of a surface of a semiconductor substrate. Then, a charged region is formed on a second position of the surface of the semiconductor substrate, thereby establishing of which an electric field direction from the first position toward the second position. The first position is spaced apart from the second position by a distance. Thereafter, a precursor gas flows along the electric field direction on the semiconductor substrate, thereby forming a carbon nanotube (CNT) on the semiconductor substrate.

A method of manufacturing an organic semiconductor device is provided. The method includes providing a substrate, forming a sacrificial layer on the substrate, forming a patterned organic semiconductor layer on the sacrificial layer, forming an insulating layer on the patterned organic semiconductor layer, forming a gate electrode on the insulating layer, separating the sacrificial layer and the substrate from the patterned organic semiconductor layer, and forming a source/drain electrode on the patterned organic semiconductor layer, so as to provide a simple and effective method of manufacturing the organic semiconductor device.

A field-effect transistor includes: a substrate; a source electrode; a drain electrode; a gate electrode; a semiconductor layer in contact with the source electrode and with the drain electrode; and a gate insulating layer insulating between the semiconductor layer and the gate electrode. The gate insulating layer comprising at least a polysiloxane having a structural unit represented by a general formula (1): ##STR00001## in the general formula (1), R.sup.1 represents a hydrogen atom, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group, or an alkenyl group; R.sup.2 represents a hydrogen atom, an alkyl group, a cycloalkyl group, or a silyl group; m represents 0 or 1; A.sup.1 represents an organic group including at least two groups selected from a carboxy group, a sulfo group, a thiol group, a phenolic hydroxy group, or a derivative of these groups.

What is provided is a pattern forming method for forming a pattern on a surface to be processed of an object, the method including: a first layer forming step of forming a first layer containing a compound having a protective group that is decomposable by an acid and also decomposable by light, on the surface to be processed; a second layer forming step of forming a second layer containing a photoacid generator that is configured to generate an acid by exposure, on the first layer; an exposure step of exposing the first layer and the second layer to form a latent image including an exposed region and an unexposed region, on the first layer; and a disposition step of disposing a pattern forming material in the exposed region or the unexposed region.

A driving substrate includes a substrate, a plurality of active devices, a thermal-conducting pattern layer and a buffer layer. The active devices are separately arranged on the substrate. Each active device includes a gate, a channel layer, a gate insulation layer, a source and a drain. The source and the drain expose a portion of the channel layer to define a channel region. The thermal-conducting pattern layer is disposed on the substrate and includes at least one thermal-conducting body and at least one thermal-conducting pattern connected to the thermal-conducting body. The thermal-conducting pattern corresponds to a location of at least one of the channel region, the channel layer, the gate, the source and the drain and each active device. The buffer layer is disposed on the substrate and covers the thermal-conducting pattern layer, and is located between the thermal-conducting pattern and each active device.

The present application relates to an organic electronic device, said electronic device comprising a multi-layer electrode as well as an organic semiconducting layer, as well as to a method for producing such organic electronic device.

A true random number generator including a transistor, a first voltage source, a second voltage source, and a comparator. The transistor has a first electrode, a second electrode, and a third electrode. Two of the electrodes are electrically connected by a channel of conductive nanomaterial. The first voltage source is electrically connected to the first electrode and the second voltage source is electrically connected to the second electrode. The comparator is electrically connected to the third electrode and is configured to classify a measured electrical property at the third electrode as either HIGH or LOW based on a comparison of the measured electrical property with a reference value. The measured electrical property varies over time due to random telegraph signals (RTSs) due to defects in the transistor.

An organic thin film transistor includes a transparent base substrate and a transparent gate layer formed on the transparent base substrate. A gate insulating layer includes an oxidized inorganic sub-layer and a non-oxidized organic sub-layer formed on the transparent gate layer. A source electrode and a drain electrode are buried within the non-oxidized organic sub-layer. Each of the source electrode and the drain electrode has a bottom side, and the bottom side surface of each of the source electrode and the drain electrode faces the transparent gate layer and contacts the non-oxidized organic sub-layer. The transparent gate layer is buried within the oxidized inorganic sub-layer, and the oxidized inorganic sub-layer covers a top surface and side surfaces of the transparent gate layer.

In accordance with various embodiments of the disclosed subject matter, an organic thin film transistor, and a fabricating method thereof are provided. In some embodiments, the method for forming an organic thin film transistor (OTFT), comprising: forming a transparent gate layer on a transparent base substrate; forming a first initial silicone polymer layer on the transparent gate layer; and performing an oxidization process to partially oxidize the first initial silicone polymer layer to form a gate insulating layer, including an oxidized inorganic sub-layer that contacts the transparent gate layer, and a non-oxidized organic sub-layer.