An organic thin-film transistor including: a gate electrode, an organic semiconductor layer, a gate insulating layer, a source electrode, and a drain electrode on a substrate, in which the organic semiconductor layer includes an organic semiconductor and a resin (C) having one or more groups selected from the group consisting of a group having fluorine atoms, a group having silicon atoms, an alkyl group having one or more carbon atoms or having two or more carbon atoms in a case of forming an alkoxycarbonyl group, a cycloalkyl group, an aralkyl group, an aryloxycarbonyl group, an aromatic ring group substituted with at least one alkyl group, and an aromatic ring group substituted with at least one cycloalkyl group; and a method for manufacturing an organic thin-film transistor including: applying a coating solution which contains the organic semiconductor and the resin (C) and causing the resin (C) to be unevenly distributed.

A semiconducting composition comprising a semiconducting polymer and a semiconducting non-polymeric polycyclic compound, wherein the semiconducting polymer comprises units of A and/or B: ##STR00001##
wherein R.sub.1, R.sub.2, R.sub.5, R.sub.6, R.sub.7, R.sub.8, x, y, p, q, r, R.sub.3, R.sub.4, R.sub.9, R.sub.10 and R.sub.11 have any of the meanings defined in the description.

An example embodiment relates to an organic semiconductor compound, represented by Chemical Formula 1 herein, which may be polymerized and used in transistors and electronic devices. The organic semiconductor compound includes a base structure of four fused benzene rings with functional groups R.sup.1 to R.sup.3 connected to a first benzene ring and with functional groups R.sup.4 to R.sup.6 connected to a second benzene ring. The base structure's third and fourth benzene rings are connected to X.sup.1, X.sup.2 and X.sup.3, X.sup.4 respectfully. At least one of X.sup.1 and X.sup.2 is a sulfur atom. At least one of X.sup.3 and X.sup.4 is a sulfur atom. The base structure further includes functional groups R.sup.7 and R.sup.8.

The present invention relates to novel compositions comprising one or more polymeric organic semiconducting (OSC) compounds and one or more organic solvents. The composition preferably comprises 3,4-dimethyl anisole as solvent. Furthermore, the present invention describes the use of these compositions as inks for the preparation of organic electronic (OE) devices, especially organic photovoltaic (OPV) cells and organic light emitting diodes (OLED) devices, to methods for preparing OE devices using the novel formulations, and to OE devices, OLED devices and OPV cells prepared from such methods and formulations.

The present invention generally discloses an organic optoelectronic material and organic electroluminescent (herein referred to as organic EL) device, organic photovoltaics (herein referred to as OPV) device and organic thin-film transistor (herein referred to as OTFT) device using the organic optoelectronic material. More specifically, the present invention relates to the organic optoelectronic material formula (1), and an organic EL device, OPV device and OTFT device employing the organic optoelectronic material can improve performance.

The present disclosure pertains to the field of carbon nanotube technologies, and provides a carbon nanotube semiconductor device and a manufacturing method thereof. The manufacturing method of a carbon nanotube semiconductor device provided in the present disclosure comprises: forming a carbon nanotube layer with a carbon nanotube solution; and treating the carbon nanotube layer with an acidic solution. The carbon nanotube semiconductor device manufactured by the method of the present disclosure has good performance uniformity.

A method of synthesizing a fused heteroaromatic compound includes obtaining a first intermediate from a first compound represented by Chemical Formula 1 and a second compound represented by Chemical Formula 2, obtaining a second intermediate including a ring having a chalcogen element from the first intermediate, and obtaining a fused heteroaromatic compound by a cyclization reaction of the second intermediate.

Embodiments of the invention include a method of fabrication of a semiconductor structure. The method of fabrication includes: Forming a trench in a first dielectric material down to a first conductive material of a bottom gate. A sidewall of the trench contacts a top surface of the first conductive material. Depositing a second conductive material on the sidewall of the trench, which forms an electrical connection with the first conductive material. Depositing a second dielectric material in the trench, and on the second conductive material. Depositing a gate dielectric material on the second conductive material and the dielectric materials. Forming a channel material on the gate dielectric material. Depositing another conductive material on the channel material and portions of the gate dielectric material to form a source terminal and a drain terminal.

Provided is a 4-oxoquinoline compounds of the formula (I) (I) wherein A is selected from diradicals of the formulae (A.1), (A.2), (A.3), (A.4), (A.5) and (A.6), (A.1) (A.2) (A.3) (A.4) (A.5) (A.6) wherein R.sup.1, R.sup.2a, R.sup.2b, R.sup.3, R.sup.3a, if present R.sup.4a, R.sup.4b, R.sup.5a, R.sup.5b, R.sup.6a, R.sup.6b, R.sup.6c, R.sup.6d, R.sup.n1, R.sup.n2, R.sup.n3, R.sup.n4, R.sup.m5, R.sup.m6, R.sup.m7, R.sup.m8, R.sup.7, R.sup.8a, R.sup.9 and R.sup.9a are as defined in the claims and in the description. Also provided is a method for their preparation and their use.

##STR00001## ##STR00002##

A 4-hydroxquinoline compound has the formula (I)

##STR00001## wherein A is selected from diradicals of the formulae (A.1), (A.2), (A.3), (A.4), (A.5), and (A.6) wherein R.sup.1, R.sup.2a, R.sup.2b, R.sup.3, if present R.sup.4a, R.sup.4b, R.sup.5a, R.sup.5b, R.sup.6a, R.sup.6b, R.sup.6c, R.sup.6d, R.sup.n1, R.sup.n2, R.sup.n3, R.sup.n4, R.sup.m5, R.sup.m6, R.sup.m7, R.sup.m8, R.sup.7, R.sup.8a, R.sup.9 are as defined in the description.