H10K30/821

LEAD ABSORBING MATERIALS FOR THE SEQUESTRATION OF LEAD IN PEROVSKITE SOLAR CELLS
20230247845 · 2023-08-03 ·

Described herein are solar cells, comprising: an active layer comprising a perovskite composition, wherein the perovskite composition comprises lead; and, a lead-absorbing material. In certain embodiments, the lead-absorbing material is an ion exchange material. The lead absorbing material helps prevent lead leakage in damaged solar cells and solar modules under severe weather conditions.

Conductive substrate, manufacturing method thereof and display device

Embodiments of the present invention provide a conductive substrate, a manufacturing method thereof and a display device. The conductive substrate includes a base substrate and a first conductive layer and a second conductive layer disposed on the base substrate, wherein the first conductive layer and the second conductive layer contact with each other, the first conductive layer is configured to be electrically connected with separated parts after the second conductive layer is fractured, and the first conductive layer includes a composite material layer or a nanowire conductive network layer.

DISPLAY PANEL AND FABRICATING METHOD THEREOF

A display panel and a fabricating method thereof are provided. The display panel includes: a substrate; and an array of pixels on the substrate, each pixel having a sub-pixel region and a photosensitive region, wherein the sub-pixel region includes a light emitting structure; the photosensitive region is configured to sense light emitted by the light emitting structure and reflected by a finger; and the photosensitive region includes a photosensitive thin film transistor having a vertical channel with respect to the substrate.

Molecular bottom-up methods for fabricating perovskite solar cells, perovskite materials fabricated thereof, and optoelectronic devices including same

Disclosed is a building blocks method for low-cost fabrication of single crystal organometallic perovskite materials with pseudo crystallized hole transporting material layer. This method uses self-assembled molecular monolayers SAM as building blocks. This approach enables creation of defect-free perovskite crystals with desired morphology and crystallinity in a controlled way. Additionally, the crosslinked molecular layers SAM play a role of hole transporting materials HTM and encapsulation against diffusion of metal atoms and gas molecules, thus enhancing the stability of the perovskite materials. This method is cost effective and can be scaled up.

Novel Carbon Nano-Structures for Energy Generation Applications
20210351368 · 2021-11-11 ·

This relates to a device for detecting or converting light or heat energy, the device comprising: a Graphene sheet formed into a scroll such as to provide a monolayer structure in which the radius of curvature of the graphene sheet increases on increasing distance from the longitudinal axis of the scroll.

Graphene-based photodetector
11563190 · 2023-01-24 · ·

Various graphene-based photodetectors are disclosed. An example photodetector device may include: a substrate; a first antenna component fabricated on the substrate, the first antenna component comprising one or more antenna electrodes; a second antenna component fabricated on the substrate, the second antenna component comprising one or more antenna electrodes; a source region coupled to the first antenna component and the substrate; and a drain region coupled to the second antenna component and the substrate; wherein the one or more antenna electrodes in the first antenna component and the second antenna component are made of graphene.

Display panel and fabricating method thereof

A display panel and a fabricating method thereof are provided. The display panel includes: a substrate; and an array of pixels on the substrate, each pixel having a sub-pixel region and a photosensitive region, wherein the sub-pixel region includes a light emitting structure; the photosensitive region is configured to sense light emitted by the light emitting structure and reflected by a finger; and the photosensitive region includes a photosensitive thin film transistor having a vertical channel with respect to the substrate.

PHOTOELECTRIC CONVERSION ELEMENT, ELECTRONIC DEVICE, AND LIGHT-EMITTING DEVICE
20220216440 · 2022-07-07 ·

A photoelectric conversion element includes: a first electrode; a second electrode; and a photoelectric conversion layer disposed between the first electrode and the second electrode and containing semiconducting carbon nanotubes and a first material that functions as a donor or an acceptor for the semiconducting carbon nanotubes. The semiconducting carbon nanotubes have light absorption characteristics including a first absorption peak at a first wavelength, a second absorption peak at a second wavelength shorter than the first wavelength, and a third absorption peak at a third wavelength shorter than the second wavelength. The first material is transparent to light in at least one wavelength range selected from the group consisting of a first wavelength range between the first wavelength and the second wavelength and a second wavelength range between the second wavelength and the third wavelength.

Halide-semiconductor radiation detector
11409008 · 2022-08-09 · ·

A radiation detector includes a halide semiconductor sandwiched a cathode and an anode and a buffer layer between the halide semiconductor and the anode. The anode comprises a composition selected from: (a) an electrically conducting inorganic-oxide composition, (b) an electrically conducting organic composition, and (c) an organic-inorganic hybrid composition. The buffer layer comprises a composition selected from: (a) a composition distinct from the composition of the anode and including at least one other electrically conducting inorganic-oxide composition, electrically conducting organic composition, or organic-inorganic hybrid composition; (b) a semi-insulating layer selected from: (i) a polymer-based composition; (ii) a perovskite-based composition; (iii) an oxide-semiconductor composition; (iv) a polycrystalline halide semiconductor; (v) a carbide, nitride, phosphide, or sulfide semiconductor; and (vi) a group II-VI or III-V semiconductor; and (c) a component metal of the halide-semiconductor.

MEMORY DEVICE
20220115591 · 2022-04-14 ·

A memory device includes a bottom electrode, an insulating layer, and a top electrode. The bottom electrode includes a plurality of carbon nanotubes. The insulating layer is disposed over the plurality of carbon nanotubes. The top electrode includes a graphene layer separated from the plurality of carbon nanotubes by the insulating layer.