Patent classifications
H10K30/821
Semiconductor structure and semiconductor device using the same
A semiconductor structure includes a semiconductor layer, a carbon nanotube and a conductive film. The semiconductor layer includes a first surface and a second surface. A thickness of the semiconductor layer ranges from 1 nanometer to 100 nanometers. The carbon nanotube is located on the first surface of the semiconductor. The conductive film is located on the second surface of the semiconductor. The conductive film is formed on the second surface by a depositing method. The carbon nanotube, the semiconductor layer and the conductive film are stacked with each other to form a three-layered stereoscopic structure.
Fabrication and application of nanofiber ribbons and sheets and twisted and non-twisted nanofiber yarns
A nanofiber yarn that includes a plurality of nanofibers twisted into a yarn along an alignment axis. The nanofibers of the plurality of nanofibers have a ratio of nanofiber length to nanofiber circumference of at least 50. The yarn has a helix angle measured relative to the alignment axis of from 5? to 30?. The yarn has tensile strength of at least 280 MPa. A nanofiber fabric that includes a first sheet of multiwalled nanotubes and a second sheet of multiwalled nanotubes on the first sheet of multiwalled nanotubes. The multiwalled nanotubes of the first sheet are aligned in a first direction. The multiwalled nanotubes of the second sheet are aligned in the first direction. The first sheet and the second sheet are aligned so that the multiwalled nanotubes of the first sheet and the second sheet are both aligned in the first direction.
Stable compositions of carbon nanotubes-electrolytic polymers
The invention relates to stable compositions of carbon nanotubes and of electrolytic polymers, these electrolytic polymers being characterized by the presence of phosphonyl imide or sulfonyl imide functions or alternatively phosphoric acid functions. The invention also relates to the manufacture of transparent electrodes comprising these compositions of carbon nanotubes and of electrolytic polymers.
Method for the synthesis of nanocomposites based on TiO2 and carbonated nanostructures
The invention relates to a method for the synthesis of a nanocomposite compound comprising TiO.sub.2 nanoparticles bound to carbon nanostructures, characterized in that it comprises the following steps: a) mixing carbon nanostructures and at least one TiO.sub.2 precursor in a first liquid in order to form a stock suspension; b) nebulizing said stock suspension and transporting it into a reaction chamber by means of a gaseous flow; and c) carrying out laser pyrolysis of said stock suspension in said reaction chamber in order to simultaneously form TiO.sub.2 nanoparticles and graft them onto the nano structures.
Polymeric dielectrics, methods of manufacturing the same, and electronic devices and thin film transistors including the same
A polymeric dielectric may include a coordination complex of a modified elastic polymer and a metal cation. The modified elastic polymer may include an organic ligand moiety that coordinates the metal cation in a main chain of the elastic polymer. Provided are a method of manufacturing the same, and an electronic device and a thin film transistor including the same.
FABRICATION AND APPLICATION OF NANOFIBER RIBBONS AND SHEETS AND TWISTED AND NON-TWISTED NANOFIBER YARNS
A nanofiber forest on a substrate can be patterned to produce a patterned assembly of nanofibers that can be drawn to form nanofiber sheets, ribbons, or yarns.
SEMICONDUCTOR DEVICES
A semiconductor device includes a first conductive pattern at an upper portion of a first insulating interlayer on a first substrate, a first plurality of conductive nanotubes (CNTs) extending vertically, a second conductive pattern at a lower portion of a second insulating interlayer beneath a second substrate, and a second plurality of CNTs extending vertically. A lower surface of the second insulating interlayer contacts an upper surface of the first insulating interlayer. At least a portion of a sidewall of each of the first plurality of CNTs is covered by the first conductive pattern, and at least a portion of a sidewall of each of the second plurality of CNTs is covered by the second conductive pattern. The first and second conductive patterns vertically face each other, and at least one of the first plurality of CNTs and at least one of the second plurality of CNTs contact each other.
Metal-carbon-nanotube metal matrix composites for metal contacts on photovoltaic cells
A solar cell structure is disclosed that includes a first metal layer, formed over predefined portions of a sun-exposed major surface of a semiconductor structure, that form electrical gridlines of the solar cell; a network of carbon nanotubes formed over the first metal layer; and a second metal layer formed onto the network of carbon nanotubes, wherein the second metal layer infiltrates the network of carbon nanotubes to connect with the first metal layer to form a first metal matrix composite comprising a metal matrix and a carbon nanotube reinforcement, wherein the second metal layer is an electrically conductive layer in which the carbon nanotube reinforcement is embedded in and bonded to the metal matrix, and the first metal matrix composite provides enhanced mechanical support as well as enhanced or equal electrical conductivity for the electrical contacts against applied mechanical stressors to the electrical contacts.
SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR DEVICE USING THE SAME
A semiconductor structure includes a semiconductor layer, a carbon nanotube and a conductive film. The semiconductor layer includes a first surface and a second surface. A thickness of the semiconductor layer ranges from 1 nanometer to 100 nanometers. The carbon nanotube is located on the first surface of the semiconductor. The conductive film is located on the second surface of the semiconductor. The conductive film is formed on the second surface by a depositing method. The carbon nanotube, the semiconductor layer and the conductive film are stacked with each other to form a three-layered stereoscopic structure.
LIGHT DETECTOR
A light detector includes a semiconductor element, a first electrode, a second electrode and a current detecting element electrically connected with each other to form a circuit. The semiconductor element includes a semiconductor structure, a carbon nanotube and a transparent conductive film. The semiconductor structure includes a P-type semiconductor layer and an N-type semiconductor layer and defines a first surface and a second surface. The carbon nanotube is located on the first surface of the semiconductor. The transparent conductive film is located on the second surface of the semiconductor. The transparent conductive film is formed on the second surface by a depositing method or a coating method.