An optoelectronic device is disclosed. In an embodiment the optoelectronic device includes a light-transmissive first electrode, an electrically conductive track including a metal, and a functional organic region having at least one active region, wherein the electrically conductive track is arranged between the first electrode and the functional organic region and wherein the electrically conductive track is in direct contact with the first electrode and the functional organic region.

A photovoltaic device (1) is provided with plurality of mutually subsequent photovoltaic device cells (1A, . . . , 1F) arranged along a direction of first device axis (D1). Each pair of a photovoltaic device cell and its successor are serially arranged through an interface region (1CD), further having a bypass function, and which extends along a second axis (D2), transverse to the first axis.

A flexible circuit that allows a standardized connection interface to connect flexible solar cell(s) for easy integration into electronics devices. This interconnection scheme does not limit the intrinsic solar cell flexibility and may conform to standard design practices in electronic device manufacturing. In an aspect, a solar module is described that includes one or more solar panels and a flexible trace or interconnect having conductive wires inside an insulation material. In another aspect, an electronic device is described that includes a circuit board, one or more solar panels and a flexible trace or interconnect having conductive wires inside an insulation material. The electronic device may be an internet-of-things (IoT) device or an unmanned aerial vehicle (UAV), for example. In yet another aspect, a lighting module is described that includes one or more lighting panels and a flexible trace or interconnect having conductive wires inside an insulation material.

Method of manufacturing a photovoltaic cell, comprising the steps of: providing a photovoltaic conversion device; providing a transparent conductive oxide layer upon at least a first face of said photovoltaic conversion device; forming a self-assembled monolayer on said transparent conductive oxide layer, said self-assembled monolayer being based on molecules terminated by at least one group F which is chosen from: a phosphonic acid group, a P(O)O.sub.2.sup.−M.sup.+ group, a OPO.sub.3H.sub.2 group, or an OP(O)O.sub.2.sup.−M.sup.+ group, wherein M.sup.+ is a metal cation; patterning said self-assembled monolayer so as to define at least one plateable zone in which said transparent conductive oxide layer is exposed; plating a metal onto said at least one plateable zone.

Embodiments related to interlayers (e.g., interlayers comprising a transition metal oxide, a transition metal oxynitride, and/or a transition metal nitride) and associated systems, devices (e.g., photovoltaic devices), and methods are disclosed. In some embodiments, a system for exciton transfer includes a substrate including an inorganic semiconductor. An interlayer may be disposed on the substrate, and a layer including a material that undergoes singlet exciton fission when exposed to electromagnetic radiation may be disposed on the interlayer. The interlayer may be disposed between the substrate and the layer. In some embodiments, a method for manufacturing a system for exciton transfer involves depositing an interlayer onto a substrate that includes an inorganic semiconductor. The method may also include depositing a layer including a material that undergoes singlet exciton fission when exposed to electromagnetic radiation onto the interlayer.

An element includes a substrate; a transparent electrode provided on the substrate; a photoelectric conversion layer; and a back-side electrode, wherein the transparent electrode includes a first transparent electrode part and a second transparent electrode part which are spatially separated from each other, the photoelectric conversion layer is formed on the first transparent electrode part, and the back-side electrode includes: an electrode main body part which is present on the photoelectric conversion layer; an electrode connecting part which contacts the second transparent electrode part; and a bridge that connects the electrode main body part and the electrode connecting part.

A photovoltaic device (10) is provided that comprises serially arranged photovoltaic device cells (10A, 10B). Each cell having a transparent electrode layer region electrical conductors (121A, . . . , 124A) forming an electric contact with the transparent electrode layer region, a photo-voltaic stack portion (14A, 14B) that extends over the transparent electrode region (11A, 11B) and over an insulated portion of the electrical conductors, a further electrode region (15A, 5B) that extends over the photovoltaic stack portion (14A,14B). A further electrode region (15A) of a photovoltaic device cell (10A) extends over electric contacts formed by exposed ends (12B1) of the electrical conductors of a subsequent photovoltaic device cell (10B).

A photoelectric conversion element may include a first substrate, a first transparent electrode disposed on the first substrate, a hole-blocking layer disposed on the first transparent electrode, an electron-transporting layer that is disposed on the hole-blocking layer and includes an electron-transporting semiconductor on a surface of which a photosensitizing compound is adsorbed, a hole-transporting layer that is connected to the electron-transporting layer and includes a hole-transporting material, and a second electrode disposed on the hole-transporting layer, wherein the photoelectric conversion element includes an output extraction terminal part configured to extract electricity out from the photoelectric conversion element, and the output extraction terminal part is formed with a plurality of micropores piercing through the hole-blocking layer.

A photoelectric conversion element may include a first substrate, a first transparent electrode disposed on the first substrate, a hole-blocking layer disposed on the first transparent electrode, an electron-transporting layer that is disposed on the hole-blocking layer and includes an electron-transporting semiconductor on a surface of which a photosensitizing compound is adsorbed, a hole-transporting layer that is connected to the electron-transporting layer and includes a hole-transporting material, and a second electrode disposed on the hole-transporting layer, wherein the photoelectric conversion element includes an output extraction terminal part configured to extract electricity out from the photoelectric conversion element, and the output extraction terminal part is formed with a plurality of micropores piercing through the hole-blocking layer.

Photovoltaic devices, and methods of fabricating photovoltaic devices. The photovoltaic devices may include a first electrode, at least one quantum dot layer, at least one semiconductor layer, and a second electrode. The first electrode may include a layer including Cr and one or more silver contacts.