A display substrate of an electronic device and a method for manufacturing the display substrate are provided. The display substrate includes: a base; a thin film transistor formed on a side of the base; an organic light emitting layer, formed on a side of the thin film transistor facing away from the base; and a touch electrode layer, formed in the organic light emitting layer.

The present disclosure relates to a light emitting device, a method for preparing the same and a display device. The light emitting device includes a cathode layer, a quantum dot light emitting layer, a hole injection layer and an anode layer which are laminated. The hole injection layer includes a complex metal oxide film comprising two metal oxides that is at least partially oxidated.

The present specification discloses an organic electroluminescent device including: an anode; a cathode; a light emitting layer provided between the anode and the cathode; and a light scattering layer provided between the light emitting layer and the cathode.

A display substrate of an electronic device and a method for manufacturing the display substrate are provided. The display substrate includes: a base; a thin film transistor formed on a side of the base; an organic light emitting layer, formed on a side of the thin film transistor facing away from the base; and a touch electrode layer, formed in the organic light emitting layer.

The reliability of a light-emitting device is improved. Provided is a light-emitting device including a light-emitting layer between a first electrode and a second electrode. The light-emitting layer contains a light-emitting substance and a first organic compound. A difference between a sum of energy of the first organic compound in a ground state and energy of an oxygen molecule in a ground state and energy of a transition state formed by the first organic compound and the oxygen molecule is greater than or equal to 1.84 eV. A difference between the energy of the transition state formed by the first organic compound and the oxygen molecule and energy of an oxygen adduct of the first organic compound in a ground state is less than or equal to 0.87 eV.

A light-emitting device and a manufacturing method thereof, a display substrate and a display apparatus are provided in the embodiments of the present disclosure. The light-emitting device includes: a first electrode disposed on a base substrate; a quantum dot light-emitting layer disposed at a side of the first electrode away from the base substrate; and an electron transport layer disposed at a side of the quantum dot light-emitting layer close to or away from the first electrode, the electron transport layer including a first transport sub-layer and a second transport sub-layer which are arranged in layer configuration, a material of the first transport sub-layer and a material of the second transport sub-layer both including n-type metal oxides, and an oxygen content of the first transport sub-layer being less than an oxygen content of the second transport sub-layer.

The present disclosure provides a quantum dot material comprising a quantum dot body and a hole transport ligand bonded to the quantum dot body through a coordinate bond. The hole transport ligand comprises a carbazolyl group, at least one coordinating group and at least one crosslinking group having an unsaturated bond. Both of the coordinating group and the crosslinking group are terminal groups of the hole transport ligand, and the coordinating group provides the coordinate bond. The present disclosure also provides a method for manufacturing the quantum dot material, a light emitting diode and a display panel.

A display device includes a substrate, a plurality of pixels above the substrate, each of the pixels including a light emitting element, a display region including the plurality of pixels, a thin film transistor which each of the plurality of pixels includes, a protective film including a first inorganic insulating material and located between the thin film transistor and the light emitting element, a sealing film including a second inorganic insulating material and covering the light emitting element, and at least one through hole located in the display region and passing through the substrate, the protective film, and the sealing film, wherein the second inorganic insulating material is in direct contact with the protective film in a first region located between the through hole and the pixels.

A light-emitting device includes: an anode; a cathode facing the anode; an emission layer between the anode and the cathode; and an electron control layer between the emission layer and the cathode, wherein the electron control layer includes an electron control compound represented by Formula 5: ##STR00001##
A method of manufacturing the light-emitting device includes: forming an emission layer on an anode; and forming an electron control layer on the emission layer, wherein the electron control layer includes an electron control compound represented by Formula 5.

Disclosed is an organic light emitting diode device including an anode and a cathode facing each other, an emission layer interposed between the anode and the cathode, and a first hole auxiliary layer interposed between the anode and the emission layer. The first hole auxiliary layer has a higher triplet energy (T1) than the emission layer.