The present invention provides with an electron-accepting compound having a structure of the following formula (1): ##STR00001##

A light-emitting element includes a first electrode, a second electrode, and a functional layer provided between the first electrode and the second electrode. Moreover, the light-emitting element includes: a third electrode provided to the functional layer through a first insulating film; a fourth electrode provided to the functional layer through a second insulating film; a stress applying unit made of a piezoelectric material, and applying stress to the functional layer in response to application of a voltage from the third electrode and the fourth electrode; a power supply connected to the third electrode and the fourth electrode; a detecting unit detecting a condition of the functional layer; a storage unit storing predetermined threshold value information; and a control unit controlling the power supply in accordance with a result of the detection obtained from the detecting unit and the predetermined threshold information stored in the storage unit.

Discussed is an organic light emitting display device including an anode, a first emission part on the anode, and including a first hole transfer layer, a first emission layer, and a first electron transfer layer, a second emission part on the first emission part, and including a second hole transfer layer, a second emission layer, and a second electron transfer layer, and a cathode on the second emission part. At least one among the first emission part and the second emission part can include an emission control layer having an absolute value of a HOMO energy level which is larger than an absolute value of a HOMO energy level of the first hole transfer layer or the second hole transfer layer. A hole mobility of the emission control layer is 1.0×10−1 cm2/Vs to 1.0×10−2 cm2/Vs lower than a hole mobility of the first hole transfer layer or the second hole transfer layer.

A light-emitting device includes: an anode; a cathode facing the anode; an emission layer between the anode and the cathode; and an electron control layer between the emission layer and the cathode, wherein the electron control layer includes an electron control compound represented by Formula 5:

##STR00001##

A method of manufacturing the light-emitting device includes: forming an emission layer on an anode; and forming an electron control layer on the emission layer, wherein the electron control layer includes an electron control compound represented by Formula 5.

Disclosed are a structure of a quantum-dot light emitting device including a charge generation junction layer and a method of fabricating the quantum-dot light emitting device. A quantum-dot light emitting device according to an embodiment of the present invention includes a negative electrode, a first charge generation junction layer including a p-type semiconductor layer and an n-type semiconductor layer, a quantum-dot light emitting layer, a hole transport layer, a second charge generation junction layer including a p-type semiconductor layer and an n-type semiconductor layer, and a positive electrode. The first and second charge generation junction layers is formed using a solution process. Accordingly, charge generation and injection can be stabilized, a process time can be shorted, and problems in the work function a positive or a negative electrode of a quantum-dot light emitting device can be addressed.

A quantum dot device including an anode; a cathode disposed substantially opposite to the anode; a hole injection layer disposed on the anode between the anode and the cathode; a hole transport layer disposed on the hole injection layer between the hole injection layer and the cathode; and a quantum dot layer disposed on the hole transport layer between the hole transport layer and the cathode, wherein the quantum dot layer includes a plurality of quantum dots, wherein the hole transport layer includes a hole transport material and an electron transport material, and wherein a lowest unoccupied molecular orbital (LUMO) energy level of the electron transport material and a lowest unoccupied molecular orbital (LUMO) energy level of the quantum dot layer is about 0.5 electron volts or less.

A display substrate and a manufacturing method thereof, and a display panel are provided. The display substrate includes a base substrate, a first electrode, a light-emitting functional layer, and a second electrode. The light-emitting functional layer includes a first functional layer and a second functional layer, an orthographic projection of an edge of the second functional layer on the base substrate is within an orthographic projection of an edge of the first functional layer on the base substrate, and an area of an orthographic projection of the second functional layer on the base substrate is smaller than an area of an orthographic projection of the first functional layer on the base substrate; and the second electrode covers and is in contact with at least one side surface of the light-emitting functional layer and a portion of a surface of the light-emitting functional layer away from the base substrate.

An organic EL element includes a pixel electrode, a light emitting function layer that is formed on the pixel electrode, an electron injection layer formed on the light emitting function layer, and a counter electrode that is formed on the electron injection layer and that has semi-transmissive reflectivity, in which the counter electrode contains a reductive material that reduces material of the electron injection layer and Ag with atomic ratio of 75% or more, and an adsorption layer is formed on the counter electrode.

A quantum dot light emitting diode according to various embodiments of the present disclosure includes a first electrode and a second electrode that are opposite to each other; a light emitting layer that is located between the first electrode and the second electrode and includes a quantum dot; and an electron transport layer that is arranged between the first electrode and the light emitting layer and includes a metal oxide thin film, wherein the metal oxide thin film has a composition including at least one selected from the group consisting of In.sub.2O.sub.3, ZnO, SiO.sub.2 and SnO.sub.2.

A light-emitting device includes: an anode; a cathode facing the anode; an emission layer between the anode and the cathode; and an electron control layer between the emission layer and the cathode, wherein the electron control layer includes an electron control compound represented by Formula 5: ##STR00001##
A method of manufacturing the light-emitting device includes: forming an emission layer on an anode; and forming an electron control layer on the emission layer, wherein the electron control layer includes an electron control compound represented by Formula 5.