A display device comprising: pixel electrodes; an electroluminescent layer composed of layers laminated with each other, the multiple layers including a light-emitting layer and a charge generation layer; and a counter electrode. The multiple layers include a first layer composed of sections separated from each other and overlapping with the pixel electrodes, a second layer in contact with the first layer and continuous over the pixel electrodes, and a third layer interposed between the first layer and the second layer, the third layer being in contact with the first layer and the second layer over an adjacent pair of the sections. At least the charge generation layer is the first layer. The second layer is adapted to inject or transport carriers, either electrons or holes. The third layer is adapted to block the carriers injected or transported by the second layer.

A display device achieves a high resolution and a low power consumption through provision of subpixels each including a single light emitting layer and subpixels each including a plurality of overlapping light emitting layers. In the display device, it is also unnecessary to increase the number of expensive fine metal masks even for rendering of various grayscales. In addition, in the display device, different light emitting layers overlap with each other, and a charge generation layer is disposed between the overlapping light emitting layers, and, as such, emission of a secondary color can be achieved without necessity of a material for an additional light emitting layer of the secondary color.

The present invention relates to a hole injection layer for an OLED comprising a triarylamine compound doped with a charge neutral metal amide compound, characterized in that the hole injection layer has a thickness of at least about ≥20 nm to about ≤1000 nm and the charge neutral metal amide compound has the Formula Ia. ##STR00001##

An organic light emitting display device includes a plurality of pixels on a substrate, the plurality of pixels having a red subpixel, a green subpixel, and a blue subpixel; an anode on the substrate; a first hole transfer layer on the anode; a first emission layer on the first hole transfer layer in the red subpixel, the green subpixel, and the blue subpixel; a first electron transfer layer on the first emission layer; an N-type charge generation layer on the first electron transfer layer; a second hole transfer layer on the N-type charge generation layer; a second emission layer on the second hole transfer layer in the red subpixel, the green subpixel, and the blue subpixel; a second electron transfer layer on the second emission layer; and a cathode on the second electron transfer layer,

The present disclosure relates to a light emitting device, a method for preparing the same and a display device. The light emitting device includes a cathode layer, a quantum dot light emitting layer, a hole injection layer and an anode layer which are laminated. The hole injection layer includes a complex metal oxide film comprising two metal oxides that is at least partially oxidated.

An organic EL element includes a pixel electrode, a light emitting function layer that is formed on the pixel electrode, an electron injection layer formed on the light emitting function layer, and a counter electrode that is formed on the electron injection layer and that has semi-transmissive reflectivity, in which the counter electrode contains a reductive material that reduces material of the electron injection layer and Ag with atomic ratio of 75% or more, and an adsorption layer is formed on the counter electrode.

A display substrate and a manufacturing method thereof, and a display panel are provided. The display substrate includes a base substrate, a first electrode, a light-emitting functional layer, and a second electrode. The light-emitting functional layer includes a first functional layer and a second functional layer, an orthographic projection of an edge of the second functional layer on the base substrate is within an orthographic projection of an edge of the first functional layer on the base substrate, and an area of an orthographic projection of the second functional layer on the base substrate is smaller than an area of an orthographic projection of the first functional layer on the base substrate; and the second electrode covers and is in contact with at least one side surface of the light-emitting functional layer and a portion of a surface of the light-emitting functional layer away from the base substrate.

Provided is a light-emitting device including an organic light-emitting element and a control unit that controls the organic light-emitting element. The organic light-emitting element includes a first electrode, a second electrode, and an organic light-emitting layer which is disposed between the first electrode and the second electrode and in which separation of charges occurs due to incidence of excited light. The control unit changes a potential difference between the first electrode and the second electrode so that recoupling of the charges occurs, in a second period after passage of a delay period from a first period in which the excited light is incident to the organic light-emitting layer.

An organic EL element (10) has two first light emitting units (13A) which each include a first light emitting layer (16A) having one or two peak wavelengths in a wavelength region of 440 nm to 490 nm. The first light emitting units (13A) are respectively disposed at positions adjacent to inner sides of a first electrode (11) and a second electrode (12), and a substrate is disposed on outer sides of the first electrode (11) and the second electrode (12). White light obtained by light emission of the plurality of light emitting units has a continuous emission spectrum over at least a wavelength region of 380 nm to 780 nm and, in terms of light distribution characteristics of light emitted to the outside of a substrate (18), a luminance of the white light obtained through the substrate (18) has a substantially constant value in an angle range of 0 degrees to 30 degrees from an axis perpendicular to a surface direction of the substrate (18).

Disclosed is a quantum dot light-emitting diode, comprising a hole function layer arranged between an anode and a quantum dot light-emitting layer, wherein the hole function layer comprises a hole transport layer and a hole buffer layer; the hole transport layer is arranged close to the anode; the hole buffer layer is arranged close to the quantum dot light-emitting layer and comprises a first hole buffer sub-layer arranged affixed to the hole transport layer; and the material of the first hole buffer sub-layer is a first hole buffer material or a combined material composed of the first hole buffer material and a first hole transport material. The conductance of the first hole buffer material is less than 110.sup.8 Sm.sup.1, or, the hole mobility of the first hole buffer material is less than 110.sup.6 cm.sup.2V.sup.1s.sup.1.