A thin film transistor (TFT) array substrate structure based on organic light-emitting diodes (OLEDs) may include multiple sets of TFT components, capacitors, common electrodes, and data signal lines, all of which are formed on a substrate. Each set of TFT components includes a driving TFT, and the driving TFT has a gate, a source, and a drain. A drain frame extends from the drain and surrounds a pixel block of the TFT array substrate structure, and a transparent conductive film is arranged in a region surrounded by the drain frame and is in contact with the drain frame.

In one embodiment the organic light-emitting diode includes a substrate having a substrate upper side, an electrically conductive grid structure for a current distribution and an electrically conductive particle layer, which are located at the substrate upper side. The grid structure may be embedded in the particle layer. An organic layer sequence for generating the radiation is located directly on the particle layer. A covering electrode is attached to the organic layer sequence. The particle layer comprises scattering particles having a first average diameter and electrically conductive particles having a smaller second average diameter. The scattering particles are densely packed together with the conductive particles. The particle layer forms, together with the grid structure, a substrate electrode for the organic layer sequence.

The present specification relates to an organic light emitting device.

Disclosed are an organic light-emitting device and a method of manufacturing the same. In the organic light-emitting device, an auxiliary electrode is formed on anode electrode to come into contact with the anode electrode via the same mask process as the anode electrode, which results in a simplified structure and simplified processing. In addition, a bank is disposed to cover a side surface and an upper surface of the auxiliary electrode and a side surface of the anode electrode, whereby damage to the auxiliary electrode and the anode electrode is prevented.

A glazing comprising a luminous means with a substrate having a first main surface, to which a first electrode is applied, a second electrode, and an organic layer stack within an active region of the substrate between the first and the second electrode, wherein the organic layer stack comprises at least one organic layer which is suitable for generating light, wherein the luminous means is arranged between two glass plates of the glazing of a window. Also, storage furniture is disclosed comprising a storage element shaped in planar fashion and having at least one storage surface and at least one radiation-emitting component, and at least one holding apparatus for holding the storage element.

A method for producing an optoelectronic component may include forming an optoelectronic layer structure having a first adhesion layer, which comprises a first metallic material, above a carrier, providing a covering body with a second adhesion layer, which comprises a second metallic material, applying a first alloy to one of the two adhesion layers, the melting point of the first alloy being so low that the first alloy is liquid, coupling the covering body to the optoelectronic layer structure in such a way that both adhesion layers are in direct contact with the liquid first alloy, and reacting at least part of the liquid first alloy chemically with the metallic materials, as a result of which at least one second alloy is formed, which has a higher melting point than the first alloy, wherein the second alloy solidifies and fixedly connects the covering body to the optoelectronic layer structure.

An optical device (10) has a joining structure in which a first conductive film (110) and a second conductive film (130) are joined to each other. The first conductive film (110) that constitutes the joining structure is constituted by a transparent conductive material and the like. In addition, the second conductive film (130) that constitutes the joining structure is constituted by a metal material. A transition region, in which the transparent conductive material and the metal material are mixed, exists between the first conductive film (110) and the second conductive film (130). The transparent conductive material includes, for example, a conductive polymer.

The present invention provides a display substrate, which includes an anode layer, a cathode layer and a luminous layer that is provided between the anode layer and the cathode layer, the anode layer including a plurality of anodes and the luminous layer including a plurality of luminous regions, wherein the display substrate further includes at least one assisting electrode, the assisting electrode being insulated and spaced from the anode, and the assisting electrode contacting with the cathode layer in parallel, such that a total resistance of the assisting electrode and the cathode layer connected in parallel is smaller than a resistance of the cathode layer alone. The IR drop in the cathode of the display substrate provided by the present invention is relatively small, such that loss of electric signals is relatively small in the cathode layer and the assisting electrode, thereby obtaining a relatively higher image quality.

A light-emitting device includes a first electrode, an electron transport layer (ETL), a second electrode being a transparent conductive electrode (TCE) including electrically conductive nanoparticles; an emissive layer (EML) in electrical contact with the first electrode and the second electrode; and an ultrathin metal layer between the TCE and the ETL, wherein the ultrathin metal layer provides an energy step between the TCE and the ETL.

A light-emitting device having a first electrode, a second electrode, and an emissive layer (EML) in electrical contact with the first electrode and the second electrode. A charge transport layer (CTL) is positioned between the EML and the second electrode, with the second electrode being an ultrathin transparent metal layer of less than five nanometers, and including an auxiliary electrode metal grid formed by wet etching. The ultrathin transparent metal layer is positioned between the CTL and the auxiliary electrode metal grid, and the ultrathin metal layer is preferably a metal with an etchant selectivity such that it is unaffected by the wet etching of the auxiliary electrode.