A display panel includes a light-emitting substrate, an opposite substrate, and an intermediate layer assembly between the light-emitting substrate and the opposite substrate. The light-emitting substrate has a light-emitting surface configured to allow light to be emitted from, and the light emitted from the light-emitting surface is directed to the opposite substrate. The intermediate layer assembly includes a thin film encapsulation layer, a filler layer, and an overcoat that are sequentially stacked in a pointing direction vertically pointing from the light-emitting substrate to the opposite substrate. The thin film encapsulation layer includes at least two encapsulation sub-layers that are stacked in the pointing direction. In the pointing direction, refractive indexes of the encapsulation sub-layers gradually increase. A refractive index of the overcoat is higher than a refractive index of the filler layer.

Provided is an OLED device, which includes a first electrode, a second electrode, and a first light emitting unit located between the first electrode and the second electrode. An absorption rate of the first electrode for blue light is greater than an absorption rate of the first electrode for red light, and the absorption rate of the first electrode for blue light is greater than an absorption rate of the first electrode for green light. The first light emitting unit includes a light emitting layer and a hole functional unit located between the first electrode and the light emitting layer. The hole functional unit at least includes at least two hole functional layers, and any hole functional layer includes a second functional layer for injecting holes and a third functional layer for transporting holes which are stacked along a direction away from the first electrode.

A pixel unit, comprising a plurality of sub-pixels of different colors, wherein each of the sub-pixels comprises a first electrode layer, a second electrode layer, and a light-emitting layer disposed between the first electrode layer and the second electrode layer; and in the plurality of sub-pixels of the different colors, an interference intensity of light emitted by the light-emitting layer of the sub-pixel of a target color is greater than an interference intensity of light emitted by the light-emitting layers of the sub-pixels of other colors; wherein the interference intensity means an interference intensity between reflected light produced when light emitted by the light-emitting layer of the sub-pixel is frequently reflected between the layers of the sub-pixel.

A pixel unit, comprising a plurality of sub-pixels of different colors, wherein each of the sub-pixels comprises a first electrode layer, a second electrode layer, and a light-emitting layer disposed between the first electrode layer and the second electrode layer; and in the plurality of sub-pixels of the different colors, an interference intensity of light emitted by the light-emitting layer of the sub-pixel of a target color is greater than an interference intensity of light emitted by the light-emitting layers of the sub-pixels of other colors; wherein the interference intensity means an interference intensity between reflected light produced when light emitted by the light-emitting layer of the sub-pixel is frequently reflected between the layers of the sub-pixel.

An organic light emitting device including: a substrate; a first electrode; a second electrode; and an organic layer interposed between the first electrode and the second electrode and including an emission layer, wherein one of the first electrode and the second electrode is a reflective electrode and the other is a semitransparent or transparent electrode, and wherein the organic layer includes a layer having at least one of the compounds having at least one carbazole group, and a flat panel display device including the organic light emitting device. The organic light emitting device has low driving voltage, excellent current density, high brightness, excellent color purity, high efficiency, and long lifetime.

The invention relates to a method for producing a light-emitting diode comprising a semiconductor stack formed of a first layer 11, of an active layer 13, and of an extraction layer 6. It comprises a step of determining a distance h.sub.1s between emitting dipoles μ.sub.1 that are located in the active layer 13 and the extraction layer 6, such that the emitting dipoles μ.sub.1 of vertical orientation have in particular a lifetime longer than that of the emitting dipoles of horizontal orientation.

Provided are a display apparatus and a method of manufacturing the same. The display apparatus includes a substrate, a plurality of light-emitting elements on the substrate, a passivation layer covering the light-emitting elements, and a plurality of pixel circuits on the passivation layer and connected to the light-emitting elements, respectively. The light-emitting elements each include a first electrode integrally provided with the light-emitting elements on the substrate, an emission layer in an opening of a pixel-defining layer on the first electrode, and a second electrode on the emission layer.

The present invention relates to an organic electronic device comprising an anode layer, a cathode layer and a hole injection layer, wherein the hole injection layer is arranged between the anode layer and the cathode layer and wherein the hole injection layer comprises a hole transport compound and a metal complex.

The present invention relates to an organic electronic device comprising an anode layer, a cathode layer and a hole injection layer, wherein the hole injection layer is arranged between the anode layer and the cathode layer and wherein the hole injection layer comprises a hole transport compound and a metal complex.

The present disclosure relates to an optoelectronic device based on a dual micro-cavity structure, and more particularly, to a technology that simultaneously realizes the high Q factors of the three primary colors in an optoelectronic device based on a dual micro-cavity structure. The optoelectronic device according to one embodiment of the present disclosure is applied to a self-emissive device, and includes a first reflector layer, an active cavity layer formed on the first reflector layer, a second reflector layer formed on the active cavity layer, an external cavity layer formed on the second reflector layer, a third reflector layer formed on the external cavity layer, and a passivation layer formed on the third reflector layer, wherein a first micro-cavity corresponding to the first and second reflector layers and a second micro-cavity corresponding to the second and third reflector layers may be generated.