H10K50/818

Light emitting device and display apparatus including the same

A light emitting device and a display apparatus including a phase shifting mirror are provided. The light emitting device includes a first electrode, a light emitting structure, a second electrode, and a phase shifting mirror. The phase shifting mirror has a number of patterns arranged in a periodic manner with an interval between adjacent patterns. Each pattern has a top surface and a side surface between the top surface of the respective pattern and the top surface of the first electrode. A first width at a bottom portion of the respective pattern directly adjacent to the top surface of the first electrode is greater than a second width of the top surface of the respective pattern, and the first width and the second width are less than a wavelength of light generated in the light emitting structure.

DISPLAY DEVICE

A display device including a base layer including a first pixel area configured to emit a first light therefrom and a second pixel area configured to emit a second light therefrom, a first electrode on the base layer, a second electrode on the first electrode and facing the first electrode, first light emitting stacks between the first and second electrodes and in the first pixel area, a first charge generation layer between the first light emitting stacks, second light emitting stacks between the first and second electrodes and in the second pixel area, and a second charge generation layer between the second light emitting stacks. The first charge generation layer includes a first metal, the second charge generation layer includes a second metal different from the first metal, and the second metal has a work function equal to or greater than 1.7 eV and equal to or smaller than 3.2 eV.

DISPLAY DEVICE

A display device including a base layer including a first pixel area configured to emit a first light therefrom and a second pixel area configured to emit a second light therefrom, a first electrode on the base layer, a second electrode on the first electrode and facing the first electrode, first light emitting stacks between the first and second electrodes and in the first pixel area, a first charge generation layer between the first light emitting stacks, second light emitting stacks between the first and second electrodes and in the second pixel area, and a second charge generation layer between the second light emitting stacks. The first charge generation layer includes a first metal, the second charge generation layer includes a second metal different from the first metal, and the second metal has a work function equal to or greater than 1.7 eV and equal to or smaller than 3.2 eV.

FORMATION OF A TWO-LAYER VIA STRUCTURE TO MITIGATE DAMAGE TO A DISPLAY DEVICE
20230232685 · 2023-07-20 ·

In some embodiments, the present disclosure relates to a display device. The display device includes an isolation structure disposed over a reflector electrode, an additional electrode disposed over the isolation structure, and an optical emitter structure disposed over the additional electrode. A via structure includes a lower horizontal segment disposed on the reflector electrode, a vertical segment extending along a sidewall of the isolation structure, and an upper horizontal segment disposed over the isolation structure. The upper horizontal segment is connected to the lower horizontal segment by the vertical segment.

Display device

A display device includes a first polyimide layer, a first silicon oxide layer located above and in direct contact with the first polyimide layer, an amorphous silicon layer located above and in direct contact with the first silicon oxide layer, a second polyimide layer located above and in direct contact with the amorphous silicon layer, a plurality of light-emitting elements located above the second polyimide layer, a transistor array located above the second polyimide layer, the transistor array being configured to control light emission of the plurality of light-emitting elements, a transparent conductive layer located between the transistor array and the second polyimide layer, and a second silicon oxide layer located between and in direct contact with the transparent conductive layer and the second polyimide layer.

Luminescence device, and display device including same

A luminescence device includes a first electrode, a first emission portion disposed on the first electrode, a second electrode disposed on the first emission portion, and a capping layer disposed on the second electrode and including a metal atom and a metal halide compound, wherein the metal atom is a lanthanide metal, a transition metal, or a post-transition metal and the metal halide compound is formed by combining an alkali metal atom and a halogen atom.

Luminescence device, and display device including same

A luminescence device includes a first electrode, a first emission portion disposed on the first electrode, a second electrode disposed on the first emission portion, and a capping layer disposed on the second electrode and including a metal atom and a metal halide compound, wherein the metal atom is a lanthanide metal, a transition metal, or a post-transition metal and the metal halide compound is formed by combining an alkali metal atom and a halogen atom.

Light emitting device including planarization layer, method of manufacturing the light emitting device, and display apparatus including the light emitting device

Provided a light emitting device including a reflective layer including a plurality of nanostructures that are periodically two-dimensionally arranged, a planarization layer disposed on the reflective layer, a first electrode disposed on the planarization layer, an organic emission layer disposed on the first electrode, and a second electrode disposed on the organic emission layer, wherein the planarization layer includes a conductive material that is transparent with respect to light emitted by the organic emission layer, and wherein the planarization layer is disposed on upper surfaces of the plurality of nanostructures such that an air gap is provided between adjacent nanostructures of the plurality of nanostructures.

Light emitting device including planarization layer, method of manufacturing the light emitting device, and display apparatus including the light emitting device

Provided a light emitting device including a reflective layer including a plurality of nanostructures that are periodically two-dimensionally arranged, a planarization layer disposed on the reflective layer, a first electrode disposed on the planarization layer, an organic emission layer disposed on the first electrode, and a second electrode disposed on the organic emission layer, wherein the planarization layer includes a conductive material that is transparent with respect to light emitted by the organic emission layer, and wherein the planarization layer is disposed on upper surfaces of the plurality of nanostructures such that an air gap is provided between adjacent nanostructures of the plurality of nanostructures.

Artificial Nail Tip and Curing Composition Set and Applying Method Thereof
20230218059 · 2023-07-13 ·

A nail tip curing composition includes an Extend Gel, an edge-off flat brush, a nail filing device, a plurality of GEL-X tips, a pH Bonder, and a Non-Acidic Gel Primer. The pH Bonder forms a pH Bonder layer on a surface of a fingernail. The Non-Acidic Gel Primer forms a Non-Acidic Gel Prime layer overlapped on the pH Bonder layer. The Extend Gel forms an Extend Gel layer overlapped on the Non-Acidic Gel Prime layer. The GEL-X tip is filed by the nail filing device and the Extend Gel is applied on an underside contact surface of the Gel-X tip by the edge-off flat brush. The underside contact surface of the Gel-X tip is contacted with the Extend Gel layer on the fingernail in such a manner that the Gel-X tip is firmly affixed on the fingernail.